Magnetic random access memory structure and manufacturing method of the same

1. A magnetic random access memory (MRAM) structure, comprising:

an array region; and

a logic region adjacent to the array region,

wherein the array region comprises:

a bottom electrode via (BEVA);

a magnetic tunneling junction (MTJ) over the BEVA;

a top electrode over the MTJ;

a conformable oxide layer over the MTJ and the top electrode; and

a silicon oxide layer over the conformable oxide layer,

wherein the conformable oxide layer and the silicon oxide layer extend from the array region to the logic region.

2. The MRAM structure of claim 1 , further comprising a sidewall spacer surrounding the MTJ and the top electrode.

3. The MRAM structure of claim 2 , the sidewall spacer further covering a top surface of the top electrode.

4. The MRAM structure of claim 3 , further comprising a protection layer over the sidewall spacer covering the top surface of the top electrode.

5. The MRAM structure of claim 4 , wherein the protection layer further surrounds the MTJ.

6. A magnetic random access memory (MRAM) structure, comprising:

a magnetic tunneling junction (MTJ) in an array region;

a sidewall spacer surrounding the MTJ;

a protection layer, the protection layer comprises:

a first portion surrounding the sidewall spacer; and

a second portion above the sidewall spacer;

a conductive contact above the MTJ and penetrating the second portion of the protection layer.

7. The MRAM structure of claim 6 , wherein a portion of the sidewall spacer is between the second portion of the protection layer and the MTJ.

8. The MRAM structure of claim 6 , further comprising a top electrode above the MTJ, wherein a bottom surface of the conductive contact is in contact with a top surface of the top electrode.

9. The MRAM structure of claim 6 , further comprising a first oxide layer above the protection layer.

10. The MRAM structure of claim 9 , wherein the first oxide layer is in contact with an outer sidewall of the sidewall spacer.

11. The MRAM structure of claim 9 , further comprising a second oxide layer above the first oxide layer.

12. The MRAM structure of claim 6 , further comprising a low-k dielectric layer surrounding the conductive contact and above the protection layer.

13. The MRAM structure of claim 6 , wherein the protection layer comprises silicon carbide (SiC).

14. A magnetic random access memory (MRAM) structure, comprising:

a silicon carbide layer in a logic region; an MRAM stack in an array region adjacent to the logic region;

a protection layer above the MRAM stack, wherein a thickness of the silicon carbide layer is thinner than the protection layer;

a first conductive contact above the MRAM stack; and

a second conductive contact in the logic region.

15. The MRAM structure of claim 14 , further comprising a first oxide layer above the MRAM stack and further extends to the logic region.

16. The MRAM structure of claim 15 , further comprising a second oxide layer above the first oxide layer in the array region and the logic region.

17. The MRAM structure of claim 15 , wherein the first oxide layer is penetrated by the first conductive contact and the second conductive contact.

18. The MRAM structure of claim 15 , wherein a top surface of the first oxide layer in the array region is above a top surface of the first oxide layer in the logic region.

19. The MRAM structure of claim 14 , further comprising a silicon oxide layer under the protection layer and extending to the logic region.

20. The MRAM structure of claim 14 , wherein the protection layer comprises silicon carbide.