Sensor package and method

1. A method comprising:

placing a sensor die adjacent to a conductive via, the sensor die having an input/output region and a first sensing region;

encapsulating the sensor die and the conductive via with an encapsulant;

forming a first dielectric layer on the encapsulant, the sensor die, and the conductive via;

patterning the first dielectric layer with a first opening exposing the conductive via, a second opening exposing the input/output region of the sensor die, and a third opening exposing the first sensing region of the sensor die;

forming a first metallization pattern extending through the first opening and the second opening of the first dielectric layer, the third opening of the first dielectric layer being free from the first metallization pattern;

forming a second dielectric layer on the first metallization pattern and the first dielectric layer; and

extending the third opening through the second dielectric layer to expose the first sensing region of the sensor die.

2. The method of claim 1 , wherein the sensor die comprises a semiconductor substrate and pads on the semiconductor substrate, wherein encapsulating the sensor die comprises:

forming the encapsulant by transfer molding such that a recess in the encapsulant is disposed between the semiconductor substrate and the conductive via.

3. The method of claim 1 , wherein the sensor die comprises a semiconductor substrate and pads on the semiconductor substrate, wherein encapsulating the sensor die comprises:

forming the encapsulant by compression molding; and

planarizing the encapsulant such that top surfaces of the encapsulant and the conductive via extend above a top surface of the semiconductor substrate.

4. The method of claim 3 , wherein the sensor die further comprises a sacrificial film over the semiconductor substrate, and further comprising:

removing the sacrificial film to form a fourth opening exposing the first sensing region of the sensor die.

5. The method of claim 1 further comprising:

plating the conductive via on a third dielectric layer; and

forming a second metallization pattern on the third dielectric layer.

6. The method of claim 5 , wherein placing the sensor die comprises:

adhering the sensor die to the third dielectric layer with an adhesive.

7. The method of claim 5 further comprising:

forming a fourth opening in the third dielectric layer.

8. The method of claim 7 , wherein placing the sensor die comprises adhering the sensor die in the fourth opening with an adhesive, and further comprising:

after encapsulating the sensor die, removing at least a portion of the adhesive to expose a second sensing region at a back surface of the sensor die.

9. A method comprising:

forming a back-side redistribution structure, the back-side redistribution structure having a first opening;

adhering a sensor die in the first opening of the back-side redistribution structure with an adhesive, the sensor die having a first surface and a second surface opposite the first surface;

encapsulating the sensor die with an encapsulant;

forming a front-side redistribution structure over the encapsulant and the sensor die, the front-side redistribution structure having a second opening exposing the second surface of the sensor die; and

after forming the front-side redistribution structure, removing at least a portion of the adhesive to expose the first surface of the sensor die.

10. The method of claim 9 , further comprising:

attaching the back-side redistribution structure to a package substrate with conductive connectors, the conductive connectors extending through a dielectric layer of the back-side redistribution structure to contact a metallization pattern of the back-side redistribution structure.

11. The method of claim 9 , wherein removing at least the portion of the adhesive comprises:

removing a first portion of the adhesive from the first surface of the sensor die, a second portion of the adhesive remaining along a sidewall of the sensor die.

12. The method of claim 9 , wherein removing at least the portion of the adhesive comprises:

removing the adhesive from the first surface and sidewalls of the sensor die.

13. The method of claim 9 , wherein the sensor die comprises a semiconductor substrate, pads on the semiconductor substrate, and a passivation film on the pads, wherein encapsulating the sensor die comprises:

forming the encapsulant by transfer molding such that a topmost surface of the passivation film is above a topmost surface of the encapsulant.

14. The method of claim 9 , wherein the sensor die comprises a semiconductor substrate, pads on the semiconductor substrate, and a sacrificial film on the pads, wherein encapsulating the sensor die comprises:

forming the encapsulant by compression molding such that a topmost surface of the sacrificial film is below a topmost surface of the encapsulant; and

planarizing the encapsulant such that the top surfaces of the encapsulant and the sacrificial film are coplanar.

15. The method of claim 14 , wherein the sacrificial film covers a portion of the second surface of the sensor die, the method further comprising:

removing the sacrificial film to form a third opening exposing the portion of the second surface of the sensor die.

16. The method of claim 14 , wherein the sacrificial film covers an entirety of the second surface of the sensor die, the method further comprising:

removing the sacrificial film to expose the entirety of the second surface of the sensor die.

17. A method comprising:

adhering a sensor die to a carrier substrate with an adhesive, the sensor die comprising:

a semiconductor substrate;

die connectors on the semiconductor substrate;

a dielectric layer surrounding the die connectors;

a sacrificial film having a first portion on the dielectric layer and a second portion extending through the dielectric layer;

encapsulating the sensor die with an encapsulant;

planarizing the encapsulant such that top surfaces of the encapsulant and the sacrificial film are coplanar;

removing the second portion of the sacrificial film to form a first opening in the dielectric layer;

forming a front-side redistribution structure over the encapsulant and the sensor die, the front-side redistribution structure having a second opening exposing the first opening;

debonding the sensor die from the carrier substrate; and

removing at least a portion of the adhesive to expose the semiconductor substrate.

18. The method of claim 17 , wherein removing at least the portion of the adhesive comprises:

removing a first portion of the adhesive from the semiconductor substrate, a second portion of the adhesive remaining along a sidewall of the semiconductor substrate.

19. The method of claim 17 , wherein removing at least the portion of the adhesive comprises:

removing all of the adhesive from the semiconductor substrate.

20. The method of claim 17 further comprising:

forming a through via adjacent to the sensor die, the encapsulant surrounding the through via, the front-side redistribution structure electrically connecting the sensor die to the through via.