Integrated circuits with backside power rails
Semiconductor devices and methods are provided. A method according to the present disclosure includes receiving a substrate that includes a first semiconductor layer, a second semiconductor layer, and a third semiconductor layer; forming a plurality of fins over the third semiconductor layer; forming a trench between two of the plurality of fins; depositing a dummy material in the trench; forming a gate structure over channel regions of the plurality of the fins; forming source/drain features over source/drain regions of the plurality of the fins; bonding the substrate on a carrier wafer; removing the first and second semiconductor layers to expose the dummy material; removing the dummy material in the trench; depositing a conductive material in the trench; and bonding the substrate to a silicon substrate such that the conductive material is in contact with the silicon substrate. The trench extends through the third semiconductor layer and has a bottom surface on the second semiconductor layer.
1. A method comprising:
receiving a substrate that includes a first semiconductor layer, a second semiconductor layer over the first semiconductor layer, and a third semiconductor layer over the second semiconductor layer, the second semiconductor layer being different from the first and third semiconductor layers;
forming a plurality of fins over the third semiconductor layer;
forming a trench between two of the plurality of fins, wherein the trench extends through the third semiconductor layer and has a bottom surface on the second semiconductor layer;
depositing a dummy material in the trench;
forming a gate structure over channel regions of the plurality of the fins;
forming source/drain features over source/drain regions of the plurality of the fins;
bonding the substrate on a carrier wafer;
removing the first and second semiconductor layers to expose the dummy material;
removing the dummy material in the trench;
depositing a conductive material in the trench; and
bonding the substrate to a silicon substrate such that the conductive material is in contact with the silicon substrate.
2. The method of claim 1 , wherein the first and third semiconductor layers are formed of silicon (Si) and the second semiconductor layer is formed of silicon germanium (SiGe).
3. The method of claim 1 , wherein the forming of the trench comprises selectively etching the third semiconductor layer without substantially etching the second semiconductor layer.
4. The method of claim 1 , wherein the substrate further includes a fourth semiconductor layer over the third semiconductor layer and the fourth semiconductor layer is different from the third semiconductor layer.
5. The method of claim 4 , wherein the forming of the trench comprises:
forming an opening between the two of the plurality of fins through the fourth semiconductor layer; and
selectively etching the third semiconductor layer through the opening without substantially etching the second and fourth semiconductor layers.
6. The method of claim 5 , wherein the selectively etching of the third semiconductor layer comprises isotropically etching the third semiconductor layer.
7. The method of claim 1 , wherein the dummy material includes silicon oxide, silicon nitride, silicon carbonitride, silicon oxycarbonitride, aluminum oxide, or other metal oxide.
8. The method of claim 1 , wherein the conductive material includes copper, tungsten, nickel, cobalt, ruthenium, or a combination thereof.
9. A method comprising:
receiving a substrate that includes a first silicon (Si) layer, a second Si layer over the first Si layer, and a first silicon germanium (SiGe) layer between the first and second Si layers;
forming a plurality of fins over the second Si layer;
forming a trench between two of the plurality of fins, wherein the trench extends through the second Si layer and has a bottom surface on the first SiGe layer;
depositing a dummy material in the trench;
forming a gate structure over channel regions of the plurality of the fins;
forming source/drain features over source/drain regions of the plurality of the fins;
bonding the substrate on a carrier wafer;
removing the first Si layer and the first SiGe layer to expose the dummy material;
removing the dummy material in the trench;
depositing a metal in the trench; and
bonding the substrate to a third Si substrate such that the metal is in contact with the third Si substrate.
10. The method of claim 9 , wherein the forming of the trench comprises selectively etching the second Si layer without substantially etching the first SiGe layer.
11. The method of claim 9 , wherein the substrate further includes a second SiGe layer over the second Si layer.
12. The method of claim 11 , wherein the forming of the trench comprises:
forming an opening through the second SiGe layer; and
selectively etching the second Si layer through the opening without substantially etching the first and second SiGe layers.
13. The method of claim 12 , wherein the selectively etching the second Si layer comprises isotropically etching the second Si layer under the two of the plurality of the fins.
14. The method of claim 9 , wherein the dummy material includes silicon oxide, silicon nitride, silicon carbonitride, silicon oxycarbonitride, aluminum oxide, or other metal oxide.
15. The method of claim 9 , further comprising forming a source/drain contact, wherein the source/drain contact is in contact with the dummy material.
16. The method of claim 9 , wherein the removing of the first Si layer and the first SiGe layer comprises:
removing the first Si layer using a first etching process; and
removing the first SiGe layer using a second etching process different from the first etching process.
17. A method, comprising:
receiving a substrate that includes a first silicon (Si) layer, a first silicon germanium (SiGe) layer over the first Si layer, a second Si layer over the first SiGe layer, and a second SiGe layer over the second Si layer;
forming a plurality of fins over the second SiGe layer;
forming a trench between two of the plurality of fins, wherein the trench extends through the second SiGe layer and has a bottom surface in the second Si layer;
selectively and isotropically etching the second Si layer to widen the trench into a widened trench;
depositing a dummy material in the widened trench;
forming a dummy gate structure over channel regions of the plurality of the fins;
forming source/drain features over source/drain regions of the plurality of the fins;
forming a source/drain contact to be in contact with the dummy material in the widened trench;
bonding the substrate on a carrier wafer;
removing the first Si layer and the first SiGe layer to expose the dummy material;
selectively removing the dummy material in the widened trench to expose the source/drain contact; and
depositing a metal in the widened trench.
18. The method of claim 17 , wherein the dummy material comprises silicon oxide, silicon nitride, silicon carbonitride, silicon oxycarbonitride, aluminum oxide, or zirconium oxide.
19. The method of claim 17 , further comprising:
after the depositing the dummy material, forming a first dummy fin over the trench; and
forming a second dummy fin such that each of the plurality of fins is disposed between the first dummy fin and the second dummy fin.
20. The method of claim 19 ,
Wherein the first dummy fin comprises a dielectric layer,
Wherein the second dummy fin comprises the dielectric layer and a capping layer over the dielectric layer.