Granted Patent B2

US 12,389,627 · App. 17/644,563 · Granted Aug 12, 2025

Inventors: Hong Yu (Clifton Park, NY); Haiting Wang (Clifton Park, NY); Zhenyu Hu (Clifton Park, NY)

Assignee: GlobalFoundries U.S. Inc.

H10D30/62H10D30/024H10D62/832

Abstract

Claims (30)

1. A structure comprising:

a substrate having a top surface;

a first silicon germanium fin over the substrate and extending vertically from the top surface of the substrate, the first silicon germanium fin is of a different material from substrate material of the substrate;

a first silicon germanium layer in the substrate and beneath the top surface of the substrate, wherein the first silicon germanium layer contacts the first silicon germanium fin; and

a second silicon germanium layer in the substrate and beneath the top surface of the substrate, wherein the second silicon germanium layer contacts the first silicon germanium fin, wherein

the first silicon germanium fin has a bottom surface, the first silicon germanium layer has a first side, the second silicon germanium layer has a first side, and the first side of the first silicon germanium layer and the first side of the second silicon germanium layer underlaps the bottom surface of the first silicon germanium fin, and

a silicon fin over the substrate; and

an isolation structure in the substrate between the first silicon germanium fin and the silicon fin, wherein the first silicon germanium layer has a second side which contacts the isolation structure.

2. The structure of claim 1 , wherein the first silicon germanium layer has a top surface, the second silicon germanium layer has a top surface, and the bottom surface of the first silicon germanium fin is coplanar with the top surface of the first silicon germanium layer and the top surface of the second silicon germanium layer.

3. The structure of claim 1 , further comprising: a portion of the substrate under the first silicon germanium fin, wherein the portion of the substrate is between the first silicon germanium layer and the second silicon germanium layer.

4. The structure of claim 3 , wherein the portion of the substrate has a flat top surface contacting the bottom surface of the first silicon germanium fin.

5. The structure of claim 2 , wherein the first silicon germanium layer contacts the second silicon germanium layer.

6. The structure of claim 1 , further comprising:

a second silicon germanium fin over the substrate, wherein the second silicon germanium fin is spaced from the first silicon germanium fin, and the second silicon germanium layer is coupled to the second silicon germanium fin.

7. The structure of claim 6 , wherein the second silicon germanium fin has a bottom surface, the second silicon germanium layer has a second side and the second side of the second silicon germanium layer underlaps the bottom surface of the second silicon germanium fin.

8. The structure of claim 1 , wherein the structure is a vertical field effect transistor.

9. The structure of claim 6 , wherein the first silicon germanium fin and the second silicon germanium fin have side portions and middle portions, and the side portions of the first silicon germanium fin and the second silicon germanium fin have higher germanium concentration than the middle portions of the first silicon germanium fin and the second silicon germanium fin.

10. The structure of claim 1 , wherein the top surface of the substrate is horizontal, and the first silicon germanium layer and the second silicon germanium layer are beneath the horizontal top surface of the substrate, and the first silicon germanium layer has a top surface and the second silicon germanium layer has a top surface, and the top surface of the first silicon germanium layer and the top surface of the second silicon germanium layer are coplanar with the top surface of the substrate.

11. The structure of claim 1 , wherein the structure is a vertical nanowire.

12. A structure comprising:

a substrate having a top surface;

a first silicon germanium fin over the substrate and extending vertically from the top surface of the substrate, the first silicon germanium fin is of a different material from substrate material of the substrate, the first silicon germanium fin having a bottom surface;

a first silicon germanium layer in the substrate and beneath the top surface of the substrate, wherein the first silicon germanium layer is coupled to the first silicon germanium fin and the bottom surface of the first silicon germanium fin contacts a portion of the first silicon germanium layer;

a second silicon germanium layer in the substrate and beneath the top surface of the substrate, wherein the second silicon germanium layer is coupled to the first silicon germanium fin and the bottom surface of the first silicon germanium fin contacts a portion of the second silicon germanium layer; and

the second silicon germanium layer is spaced from the first silicon germanium layer, wherein

the first silicon germanium layer has a first side, the second silicon germanium layer has a first side, and the first side of the first silicon germanium layer and the first side of the second silicon germanium layer underlap the bottom surface of the first silicon germanium fin, and

a silicon fin over the substrate; and

an isolation structure in the substrate between the first silicon germanium fin and the silicon fin, wherein the first silicon germanium layer has a second side which contacts the isolation structure.

13. The structure of claim 12 , wherein a portion of the substrate fully separates the first silicon germanium layer from the second silicon germanium layer.

14. The structure of claim 12 , wherein the first silicon germanium layer has a top surface, the second silicon germanium layer has a top surface, and the bottom surface of the first silicon germanium fin is coplanar with the top surface of the first silicon germanium layer and the top surface of the second silicon germanium layer.

Assignments (1)

Continuity (1)

References Cited (15)