Contact for semiconductor device
A semiconductor device may include a source/drain contact trench adjacent to a gate. The source/drain contact trench may include a first portion and a second portion on the first portion. The semiconductor device also may include an insulating contact spacer liner within the source/drain contact trench. The insulating contact spacer liner contacts the first portion but not the second portion of the source/drain contact trench. The semiconductor device may further include a conductive material within the insulating contact spacer liner and the second portion of the source/drain contact trench. The conductive material may land in a source/drain region of the semiconductor device.
1. A semiconductor device, comprising:
a source/drain contact trench adjacent to a gate, the source/drain contact trench having a first portion and a second portion on the first portion, wherein the gate comprises a gate spacer on a sidewall of the gate, and wherein the first portion, but not the second portion, of the source/drain contact trench physically contacts the gate spacer;
an insulating contact spacer liner within the source/drain contact trench and contacting the first portion but not the second portion of the source/drain contact trench; and
a conductive material within the insulating contact spacer liner and the second portion of the source/drain contact trench, and landing in a source/drain region of a substrate of the semiconductor device.
2. The semiconductor device of claim 1 , in which the conductive material is separated from the gate spacer by the insulating contact spacer liner and an inter-layer dielectric.
3. The semiconductor device of claim 1 , in which the insulating contact spacer liner contacts the sidewall of the gate spacer and electrically isolates the conductive material from the gate.
4. The semiconductor device of claim 1 , in which the second portion includes the conductive material, a contact layer, and a barrier layer positioned between the conductive material and the contact layer.
5. The semiconductor device of claim 4 , in which the contact layer comprises titanium and/or nickel.
6. The semiconductor device of claim 4 , in which the barrier layer comprises tantalum nitride and/or titanium nitride.
7. The semiconductor device of claim 1 , in which the conductive material comprises tungsten, aluminum, copper, titanium, or cobalt.
8. The semiconductor device of claim 1 , in which the second portion of the source/drain contact trench is partially below a surface of the substrate of the semiconductor device.
9. A semiconductor device, comprising:
a source/drain contact trench adjacent to a gate, the source/drain contact trench having a first portion and a second portion on the first portion, wherein the gate comprises a gate spacer on a sidewall of the gate, and wherein the first portion, but not the second portion, of the source/drain contact trench physically contacts the gate spacer;
means for electrically isolating the source/drain contact trench, the isolating means lining the first portion but not the second portion of the source/drain contact trench; and
a conductive material within the isolating means and the second portion of the source/drain contact trench, and landing in a source/drain region of a substrate of the semiconductor device.
10. The semiconductor device of claim 9 , in which the second portion includes the conductive material, a contact layer, and a barrier layer positioned between the conductive material and the contact layer.
11. The semiconductor device of claim 10 , in which the contact layer comprises titanium and/or nickel.
12. The semiconductor device of claim 10 , in which the barrier layer comprises tantalum nitride and/or titanium nitride.