Contact via formation
Semiconductor devices and methods of forming the same are provided. In one embodiment, a semiconductor device includes an active region including a channel region and a source/drain region and extending along a first direction, and a source/drain contact structure over the source/drain region. The source/drain contact structure includes a base portion extending lengthwise along a second direction perpendicular to the first direction, and a via portion over the base portion. The via portion tapers away from the base portion.
1. A method, comprising:
providing a source/drain contact sandwiched between two dielectric features along a first direction;
forming a patterned hard mask over the source/drain contact, the patterned hard mask resembling an island disposed over a center portion of the source/drain contact;
etching the source/drain contact using the patterned hard mask as an etch mask to form a contact via; and
depositing a dielectric layer between the contact via and the two dielectric features.
2. The method of claim 1 , further comprising:
before the depositing of the dielectric layer, removing the patterned hard mask; and
after the depositing of the dielectric layer, planarizing the dielectric layer until top surfaces of the dielectric layer, the contact via, and the two dielectric features are coplanar.
3. The method of claim 2 , further comprising:
after the removing of the patterned hard mask, depositing a liner over the contact via and the two dielectric features.
4. The method of claim 3 , wherein the liner comprises cobalt (Co), tungsten (W), ruthenium (Ru), molybdenum (Mo), titanium (Ti), titanium nitride (TiN), titanium silicide (TiSi), cobalt silicide (CoSi), nickel silicide (CiSi), tantalum nitride (TaN), nickel (Ni), or titanium silicide nitride (TiSiN).
5. The method of claim 1 , wherein the etching comprises a dry etch process that includes use of Cl 2 , O 2 , CF 4 , BCl 3 , and CHF 3 .
6. The method of claim 1 , wherein the source/drain contact comprises cobalt (Co), tungsten (W), ruthenium (Ru), aluminum (Al), molybdenum (Mo), titanium (Ti), copper (Cu), or nickel (Ni).
7. The method of claim 1 , wherein the source/drain contact is spaced apart from the two dielectric features by a glue layer.
8. The method of claim 7 , wherein the glue layer comprises titanium nitride.
9. The method of claim 1 , wherein the etching of the source/drain contact further forms a base portion below the contact via.
10. The method of claim 9 , wherein the dielectric layer is deposited on a top surface of the base portion.
11. A method, comprising:
providing a workpiece comprising:
a first gate structure and a second gate structure,
a first gate spacer disposed along a sidewall of the first gate structure,
a second gate spacer disposed along a sidewall of the second gate structure,
a first self-aligned contact (SAC) dielectric feature disposed over the first gate structure and the first gate spacer,
a second SAC dielectric feature disposed over the second gate structure and the second gate spacer,
a source/drain contact disposed between the first SAC dielectric feature and the second SAC dielectric feature along a first direction, and
a first dielectric feature and a second dielectric feature sandwiching the source/drain contact along a second direction perpendicular to the first direction;
forming a patterned hard mask over the source/drain contact, wherein, along the second direction, a dimension of the patterned hard mask is smaller than a length of the source/drain contact;
etching the source/drain contact using the patterned hard mask as an etch mask to form a base portion and a via portion disposed over the base portion; and
depositing a dielectric layer over the via portion and the base portion.
12. The method of claim 11 , wherein the workpiece further comprises a glue layer disposed between the source/drain contact and the first SAC dielectric feature as well as between the source/drain contact and the second SAC dielectric feature.
13. The method of claim 12 , wherein the via portion remains spaced apart from the first SAC dielectric feature and the second SAC dielectric feature by the glue layer.
14. The method of claim 11 , further comprising:
before the depositing of the dielectric layer, removing the patterned hard mask; and
after the removing of the patterned hard mask, depositing a liner over and in contact with the via portion and a top surface of the base portion.
15. The method of claim 14 , further comprising:
planarizing the dielectric layer until top surfaces of the dielectric layer, the via portion, the first SAC dielectric feature, and the second SAC dielectric feature are coplanar.
16. The method of claim 11 , wherein the via portion tapers away from the base portion.
17. A method, comprising:
providing a source/drain contact sandwiched between two dielectric features along a first direction and sandwiched between two self-aligned contact (SAC) dielectric features along a second direction perpendicular to the first direction;
forming a patterned hard mask over the source/drain contact, wherein, along the first direction, a dimension of the patterned hard mask is smaller than a length of the source/drain contact;
etching the source/drain contact using the patterned hard mask as an etch mask to form a base portion and a via portion disposed over the base portion;
removing the patterned hard mask; and
depositing a liner over and in contact with the via portion and a top surface of the base portion; and
depositing a dielectric layer over the liner.
18. The method of claim 17 , wherein the etching comprises a dry etch process that includes use of Cl 2 , O 2 , CF 4 , BCl 3 , and CHF 3 .
19. The method of claim 17 , wherein the source/drain contact comprises cobalt (Co), tungsten (W), ruthenium (Ru), aluminum (Al), molybdenum (Mo), titanium (Ti), copper (Cu), or nickel (Ni).
20. The method of claim 17 , wherein the liner comprises cobalt (Co), tungsten (W), ruthenium (Ru), molybdenum (Mo), titanium (Ti), titanium nitride (TiN), titanium silicide (TiSi), cobalt silicide (CoSi), nickel silicide (CiSi), tantalum nitride (TaN), nickel (Ni), or titanium silicide nitride (TiSiN).