Atomic layer deposition based process for contact barrier layer
Interconnect structures and corresponding techniques for forming the interconnect structures are disclosed herein. An exemplary method includes forming a contact opening in a dielectric layer. The contact opening has sidewalls defined by the dielectric layer and a bottom defined by a conductive feature. An ALD-like nitrogen-containing plasma pre-treatment process is performed on the sidewalls (and, in some implementations, the bottom) of the contact opening. An ALD process is performed to form a titanium-and-nitrogen containing barrier layer over the sidewalls and the bottom of the contact opening. A cobalt-containing bulk layer is then formed over the titanium-and-nitrogen-containing barrier layer. A cycle of the ALD-like nitrogen-containing plasma pre-treatment process can include a nitrogen-containing plasma pulse phase and a purge phase. A cycle of the ALD process can include a titanium-containing pulse phase, a first purge phase, a nitrogen-containing plasma pulse phase, and a second purge phase.
1. A method comprising:
forming a contact opening in a dielectric layer, wherein the contact opening has sidewalls defined by the dielectric layer and a bottom defined by a conductive feature;
performing an ALD-like nitrogen-containing plasma pre-treatment process on the sidewalls of the contact opening;
performing an ALD process to form a titanium-and-nitrogen containing barrier layer over the sidewalls and the bottom of the contact opening; and
forming a cobalt-containing bulk layer over the titanium-and-nitrogen containing barrier layer, wherein the titanium-and-nitrogen containing barrier layer and the cobalt-containing bulk layer fill the contact opening.
2. The method of claim 1 , wherein a cycle of the ALD-like nitrogen-containing plasma pre-treatment process includes:
a nitrogen-containing plasma pulse phase; and
a purge phase.
3. The method of claim 2 , wherein the cycle of the ALD-like nitrogen-containing plasma pre-treatment process is performed about fifteen times to about thirty times.
4. The method of claim 1 , wherein a cycle of the ALD process includes:
a titanium-containing pulse phase;
a first purge phase;
a nitrogen-containing plasma pulse phase; and
a second purge phase.
5. The method of claim 4 , wherein the titanium-containing pulse phase includes exposing the sidewalls and the bottom of the contact opening to a titanium-and-nitrogen containing precursor.
6. The method of claim 4 , wherein the cycle of the ALD process is repeated until a thickness of the titanium-and-nitrogen containing barrier layer reaches a target thickness.
7. The method of claim 1 , wherein the ALD-like nitrogen-containing plasma pre-treatment process and the ALD process are performed in-situ.
8. The method of claim 1 , wherein the ALD-like nitrogen-containing plasma pre-treatment process and the ALD process are performed at substantially the same temperature.
9. A method comprising:
forming a contact opening in a dielectric layer;
performing at least one first cycle of a first nitrogen-containing plasma pulse and a first purge, thereby nitridizing surfaces of the dielectric layer that define the contact opening;
performing at least one second cycle of a titanium-containing pulse, a second purge, a second nitrogen-containing plasma pulse, and a third purge, thereby forming a titanium nitride layer on the nitridized surfaces of the dielectric layer that define the contact opening; and
forming a cobalt layer on the titanium nitride layer.
10. The method of claim 9 , wherein the first nitrogen-containing plasma pulse and the second nitrogen-containing plasma pulse generate diatomic nitrogen (N 2 ) plasma.
11. The method of claim 10 , wherein:
the first purge removes remaining N 2 plasma and nitrogen-containing byproducts; and
the second purge removes remaining N 2 plasma and hydrocarbon-containing byproducts.
12. The method of claim 9 , wherein a pressure maintained in an atomic layer deposition (ALD) chamber during the first nitrogen-containing plasma pulse is less than a pressure maintained in the ALD chamber during the first purge.
13. The method of claim 9 , wherein:
the first nitrogen-containing plasma pulse converts SiO x to SiON; and
the second nitrogen-containing plasma pulse converts TiNC y H z to TiN.
14. The method of claim 9 , wherein the titanium-containing pulse exposes the nitridized surfaces of the dielectric layer to tetrakis(dimethylamino)titanium (TDMAT).
15. The method of claim 9 , wherein the second cycle is performed until a thickness of the titanium nitride layer is about 10 Å to about 30 Å.
16. The method of claim 9 , wherein the first cycle and the second cycle are performed at about the same temperature.
17. The method of claim 9 , wherein the first cycle and the second cycle are performed without breaking vacuum, and further wherein the first cycle is performed in a first ALD chamber and the second cycle is performed in a second ALD chamber that is different than the first ALD chamber.
18. A method comprising:
etching a dielectric layer to form an opening that exposes a source/drain feature, a gate structure, or a contact feature of a multi-layer interconnect structure;
nitridizing surfaces of the dielectric layer that define the opening, wherein the nitridizing is achieved by performing at least one cycle of a nitrogen-containing plasma pulse phase;
depositing a conductive liner layer that includes titanium and nitrogen over the nitridized surfaces of the dielectric layer, wherein the conductive liner layer partially fills the opening;
depositing a conductive material over the conductive liner layer, wherein the conductive material fills a remainder of the opening; and
planarizing the conductive liner layer and the conductive material.
19. The method of claim 18 , wherein:
the conductive liner layer is deposited by an ALD process; and
the conductive material is deposited by a CVD process or a PVD process.
20. The method of claim 18 , further comprising in-situ nitridizing the surfaces of the dielectric layer and depositing the conductive liner layer.