Method of depositing material and semiconductor devices
The current disclosure relates to deposition of a transition metal chalcogenide barrier layer. The method of depositing a transition metal chalcogenide barrier layer comprises providing a substrate having an opening into a reaction chamber, providing a transition metal precursor in the reaction chamber in vapor phase and providing an reactive chalcogen species in the reaction chamber. The method may be a plasma-enhanced atomic layer deposition method. The disclosure further relates to an interconnect comprising a transition metal chalcogenide barrier layer.
1 . A method of depositing a transition metal chalcogenide barrier layer, the method comprising:
providing a substrate having an opening within a dielectric material, into a reaction chamber;
providing a transition metal precursor in the reaction chamber in vapor phase; and
providing a reactive chalcogen species in the reaction chamber, to thereby deposit the transition metal chalcogenide barrier layer on the dielectric material and within the opening,
wherein the transition metal chalcogenide barrier layer is between the dielectric material and a conductive metal,
wherein the chalcogenide comprises one or more of S, Se, and Te,
wherein the transition metal chalcogenide barrier layer mitigates diffusion between the conductive metal and the dielectric material, and
wherein the transition metal precursor comprises a transition metal halide or a transition metal oxyhalide.
2 . The method of claim 1 , wherein the transition metal precursor comprises the transition metal oxyhalide.
3 . The method of claim 1 , wherein the transition metal precursor comprises MoCl 4 , MoCl 5 , MoF 6 , TiCl 4 , ZrCl 4 , ZrI 4 , HfCl 4 , HfI 4 , VCl 4 , NbCl 5 , NbF 5 , TaCl 5 , TaF 5 , TaI 5 , WCl 5 , WCl 6 , or WF 6 .
4 . The method of claim 1 , wherein the method further comprises providing a second transition metal precursor in the reaction chamber.
5 . The method of claim 4 , wherein the second transition metal precursor comprises a metal organic compound comprising at least one of an amido group and an imido group.
6 . The method of claim 5 , wherein the metal organic compound comprises at least one of a tert-butylimido group and a dimethylamido group.
7 . The method of claim 1 , wherein the metal of the transition metal precursor is a group 4 to group 6 transition metal.
8 . The method of claim 1 , wherein the metal of the transition metal precursor is selected from a group consisting of molybdenum (Mo), tungsten (W), tantalum (Ta), niobium (Nb), titanium (Ti), zirconium (Zr), hafnium (Hf) and rhenium (Re).
9 . The method of claim 1 , wherein the reactive chalcogen species comprises (NH 4 ) 2 S, ((CH 3 ) 2 SO), (CH 3 ) 2 Se, (CH 3 ) 2 Te, elemental or atomic S, Se, Te, or chalcogenols with the formula R—Y—H, wherein R is a C1-C8 substituted or unsubstituted hydrocarbon, and Y is S, Se, or Te.
10 . The method of claim 1 , wherein the transition metal precursor and the reactive chalcogen species are provided in the reaction chamber alternatively and sequentially.
11 . The method of claim 1 , wherein the reactive chalcogen species is generated by plasma.
12 . The method of claim 11 , wherein the method comprises using at least two different plasmas.
13 . The method of claim 1 , wherein the temperature of the reaction chamber during providing the precursors in the reaction chamber is from about 50° C. to about 500° C.
14 . The method of claim 1 , wherein the transition metal chalcogenide barrier layer is substantially continuous and has a thickness of 3 nm or less.
15 . The method of claim 1 , further comprising applying substrate bias to affect a morphology of the transition metal chalcogenide barrier layer.
16 . The method of claim 1 , wherein the transition metal chalcogenide barrier layer is crystalline after deposition.
17 . The method of claim 1 , wherein the method further comprises the deposition of a second barrier layer material comprising a second metal chalcogenide, wherein a metal of the transition metal chalcogenide barrier layer and a metal of the second metal chalcogenide differ.