Solid-state image pickup unit and electronic apparatus
A solid-state image pickup unit includes: a substrate made of a first semiconductor; a substrate made of a first semiconductor; a photoelectric conversion device provided on the substrate and including a first electrode, a photoelectric conversion layer, and a second electrode in order from the substrate; and a plurality of field-effect transistors configured to perform signal reading from the photoelectric conversion device. The plurality of transistors include a transfer transistor and an amplification transistor, the transfer transistor includes an active layer containing a second semiconductor with a larger band gap than that of the first semiconductor, and one terminal of a source and a drain of the transfer transistor also serves the first electrode or the second electrode of the photoelectric conversion device, and the other terminal of the transfer transistor is connected to a gate of the amplification transistor.
1. An imaging device comprising:
a semiconductor substrate;
an organic photoelectric conversion layer over the semiconductor substrate;
an oxide semiconductor layer between the semiconductor substrate and the organic photoelectric conversion layer;
an electrode between the oxide semiconductor layer and the semiconductor substrate;
a first transistor at a surface of the semiconductor substrate;
a wiring below the oxide semiconductor layer and electrically coupled to a first terminal of the first transistor; and
a light shield above the semiconductor substrate, the light shield overlapping the wiring in a plan view,
wherein the oxide semiconductor layer is electrically coupled to the first terminal of the first transistor through the wiring.
2. The imaging device according to claim 1 , wherein at least a part of the first transistor is disposed in the semiconductor substrate.
3. The imaging device according to claim 1 , wherein the first terminal is a gate of the first transistor.
4. The imaging device according to claim 1 , wherein the electrode is configured to transfer a carrier from the organic photoelectric conversion layer to the first terminal of the first transistor.
5. The imaging device according to claim 1 , wherein the first terminal is a gate of an amplification transistor disposed on the surface of the semiconductor substrate.
6. The imaging device according to claim 1 , wherein the first terminal is one of a source or a drain of a reset transistor disposed in the semiconductor substrate.
7. The imaging device according to claim 1 , wherein the light shield comprises tungsten.
8. The imaging device according to claim 1 , wherein the oxide semiconductor layer has a first band gap that is wider than a second band gap of the semiconductor substrate.
9. The imaging device according to claim 1 , wherein the oxide semiconductor layer includes at least one of indium (In), gallium (Ga), and zinc (Zn).
10. The imaging device according to claim 1 , further comprising:
a wiring layer between the semiconductor substrate and the oxide semiconductor layer, wherein the electrode is disposed in the wiring layer.
11. The imaging device according to claim 10 , wherein the electrode is located closer to the oxide semiconductor layer than the surface of the semiconductor substrate.
12. The imaging device according to claim 11 , wherein the first terminal is disposed in the wiring layer.
13. The imaging device according to claim 12 , wherein the first terminal is located closer to the surface of the semiconductor substrate than the electrode.
14. An electronic apparatus comprising:
an imaging device comprising:
a semiconductor substrate;
an organic photoelectric conversion layer over the semiconductor substrate;
an oxide semiconductor layer between the semiconductor substrate and the organic photoelectric conversion layer;
an electrode between the oxide semiconductor layer and the semiconductor substrate;
a first transistor at a surface of the semiconductor substrate;
a wiring below the oxide semiconductor layer and electrically coupled to a first terminal of the first transistor; and
a light shield above the semiconductor substrate, the light shield overlapping the wiring in a plan view,
wherein the oxide semiconductor layer is electrically coupled to the first terminal of the first transistor through the wiring.