Solid-state image pickup unit and electronic apparatus
A solid-state image pickup unit includes: a substrate made of a first semiconductor; a substrate made of a first semiconductor; a photoelectric conversion device provided on the substrate and including a first electrode, a photoelectric conversion layer, and a second electrode in order from the substrate; and a plurality of field-effect transistors configured to perform signal reading from the photoelectric conversion device. The plurality of transistors include a transfer transistor and an amplification transistor, the transfer transistor includes an active layer containing a second semiconductor with a larger band gap than that of the first semiconductor, and one terminal of a source and a drain of the transfer transistor also serves the first electrode or the second electrode of the photoelectric conversion device, and the other terminal of the transfer transistor is connected to a gate of the amplification transistor.
1. A light detecting device, comprising:
a photoelectric conversion portion comprising:
a first electrode;
a second electrode; and
a photoelectric conversion layer disposed between the first electrode and the second electrode;
a semiconductor layer;
a semiconductor substrate disposed between the photoelectric conversion portion and the semiconductor layer; and
a wiring layer, wherein the wiring layer includes the semiconductor layer,
wherein one of the first electrode or the second electrode is electrically connected to the semiconductor layer, and
wherein the semiconductor layer comprises a first element and the semiconductor substrate comprises a second element which is different than the first element.
2. The light detecting device according to claim 1 , further comprising a conductor disposed in the semiconductor substrate, wherein the one of the first electrode or the second electrode is electrically connected to the semiconductor layer via the conductor.
3. The light detecting device according to claim 1 , wherein the semiconductor layer comprises an oxide semiconductor.
4. The light detecting device according to claim 1 , wherein the semiconductor layer comprises a source region and a drain region of a first transistor.
5. The light detecting device according to claim 4 , wherein the one of the first electrode or the second electrode is electrically connected to one of the source region or the drain region of the first transistor.
6. The light detecting device according to claim 5 , wherein the semiconductor substrate comprises a source region and a drain region of a second transistor.
7. The light detecting device according to claim 6 , wherein the first transistor overlaps at least part of the second transistor in a plan view.
8. The light detecting device according to claim 6 , wherein the one of the first electrode or the second electrode is electrically connected to a gate of the second transistor.
9. The light detecting device according to claim 1 , wherein at least part of the wiring layer is disposed between the semiconductor layer and the semiconductor substrate.
10. The light detecting device according to claim 1 , wherein the first element is indium, zinc, or gallium, wherein the second element is silicon, and wherein the semiconductor substrate further comprises at least one photodiode that senses a different wavelength of light than the photoelectric conversion layer.
11. The light detecting device according to claim 10 , wherein the at least one photodiode overlaps with the photoelectric conversion layer in a plan view.
12. The light detecting device according to claim 1 , further comprising:
a first transistor, wherein part of the first transistor is disposed in the semiconductor substrate; and
a second transistor.
13. The light detecting device according to claim 12 , wherein, in a cross sectional view, the first transistor is between the second transistor and the photoelectric conversion layer.
14. The light detecting device according to claim 12 , further comprising:
a conductor that passes through the semiconductor substrate, wherein one of the first electrode or the second electrode is electrically connected to the first transistor and the second transistor through the conductor.
15. The light detecting device according to claim 12 ,
wherein another part of the first transistor is disposed in the wiring layer.
16. The light detecting device according to claim 15 , wherein the second transistor is disposed in the wiring layer.
17. The light detecting device according to claim 15 , wherein the another part of the first transistor is a gate of the first transistor.
18. The light detecting device according to claim 17 , wherein the part of the first transistor is a source and a drain of the first transistor.
19. The light detecting device according to claim 1 , wherein the semiconductor layer comprises an active layer of a first transistor.
20. An electronic apparatus, comprising:
a signal processor; and
a light detecting device, comprising:
a photoelectric conversion portion comprising:
a first electrode;
a second electrode; and
a photoelectric conversion layer disposed between the first electrode and the second electrode;
a semiconductor layer;
a semiconductor substrate disposed between the photoelectric conversion portion and the semiconductor layer; and
a wiring layer, wherein the wiring layer includes the semiconductor layer,
wherein one of the first electrode or the second electrode is electrically connected to the semiconductor layer, and
wherein the semiconductor layer comprises a first element and the semiconductor substrate comprises a second element which is different than the first element.