IP Library Granted Patent US 10,840,201
Granted Patent B2
US 10,840,201 · App. 16/390,218 · Granted Nov 17, 2020

Methods and apparatus for transmission lines in packages

Inventors: Chin-Wei Kuo (Zhubei, TW); Hsiao-Tsung Yen (Tainan, TW); Min-Chie Jeng (Taipei, TW); Yu-Ling Lin (Taipei, TW)
Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
H01L24/11H01L21/563H01L23/49811H01L23/49822H01L23/525H01L23/5225H01L23/66H01L24/16H01L24/81H01L25/0657H01L23/5329H01L23/53223H01L23/53238H01L23/53257H01L2223/6627H01L2924/0002H01L2924/014H01L2924/01028H01L2924/01029H01P5/028Y10T29/49124
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Quick Facts
Patent No.
US 10,840,201
App. No.
16/390,218
Granted
Nov 17, 2020
Kind
B2
Abstract

Methods and apparatus for forming a semiconductor device package with a transmission line using a micro-bump layer are disclosed. The micro-bump layer may comprise micro-bumps and micro-bump lines, formed between a top device and a bottom device. A signal transmission line may be formed using a micro-bump line above a bottom device. A ground plane may be formed using a redistribution layer (RDL) within the bottom device, or using additional micro-bump lines. The RDL formed ground plane may comprise open slots. There may be RDLs at the bottom device and the top device above and below the micro-bump lines to form parts of the ground planes.

Claims (36)

1. A device comprising:

a first substrate;

a first insulator layer over the first substrate;

a redistribution layer over the first insulator layer, the redistribution layer comprising a first redistribution line and a second redistribution line;

a second insulator layer over the redistribution layer;

a micro-bump layer over the second insulator layer, the micro-bump layer comprising a micro-bump line and a micro-bump structure, wherein the micro-bump line is laterally above the first redistribution line and the micro-bump structure contacts the second redistribution line, wherein the micro-bump line and the micro-bump structure comprise a same one or more layers, wherein the micro-bump line and the micro-bump structure each comprise a layer of solder material;

a second substrate coupled to the micro-bump structure; and

an underfill interposed between the second insulator layer and the second substrate, the underfill completely separating the micro-bump line and the second substrate.

2. The device of claim 1 , wherein a width of the micro-bump line is less than a width of the first redistribution line, the micro-bump line being a signal transmission line and the first redistribution line being coupled to a ground plane.

3. The device of claim 1 , wherein a width of the micro-bump line is greater than a width of the first redistribution line, the micro-bump line being coupled to a ground plane and the first redistribution line being coupled to a signal transmission line.

4. The device of claim 1 , wherein the redistribution layer further comprises a third redistribution line, wherein the micro-bump line overlaps the first redistribution line and the third redistribution line, a width of the micro-bump line is less than a combined width of the first redistribution line and the third redistribution line, the micro-bump line being coupled to signal transmission line, wherein the first redistribution line and the third redistribution line are coupled to a ground plane.

5. The device of claim 1 , wherein the first redistribution line comprises one or more slots.

6. The device of claim 1 , wherein the micro-bump line and the micro-bump structure each comprise a layer of copper.

7. The device of claim 1 , wherein the micro-bump line and the micro-bump structure comprises an under bump metallization (UBM).

8. A device comprising:

a first substrate having a redistribution line and a first insulator layer;

a micro-bump layer comprising a micro-bump line and a micro-bump structure, wherein the first insulator layer is interposed between the redistribution line and the micro-bump line, each of the micro-bump line and the micro-bump structure comprising both one or more metallic layers and a solder layer on the one or more metallic layers, wherein the one or more metallic layers is interposed between the solder layer and the first insulator layer;

a second substrate bonded to the micro-bump structure by the solder layer; and

an underfill interposed between the micro-bump line and the second substrate, the underfill completely separating the micro-bump line and the second substrate.

9. The device of claim 8 , wherein the redistribution line comprises slots.

10. The device of claim 9 , wherein a longitudinal axis of the slots are perpendicular to a longitudinal axis of the micro-bump line.

11. The device of claim 10 , wherein the slots are wider than the micro-bump line in a plan view.

12. The device of claim 8 , wherein the micro-bump layer further comprises a first micro-bump ground line and a second micro-bump ground line, wherein the micro-bump line is laterally interposed between the first micro-bump ground line and the second micro-bump ground line.

13. The device of claim 12 , wherein the redistribution line extends under the first micro-bump ground line and the second micro-bump ground line.

14. The device of claim 8 , wherein the redistribution line and the micro-bump line are on opposite sides of the first substrate.

15. A device comprising:

a micro-bump layer on a first substrate, the micro-bump layer comprising one or more micro-bump lines and a micro-bump structure, wherein each of the one or more micro-bump lines and the micro-bump structure have a same conductive layer structure, wherein the conductive layer structure of both the one or more micro-bump lines and the micro-bump structure comprises a solder layer;

a redistribution line below the micro-bump layer;

a first insulator layer interposed between the redistribution line and the micro-bump layer;

a second substrate coupled to the micro-bump structure by the solder layer of the micro-bump structure; and

an underfill interposed between the micro-bump line and the second substrate, wherein the underfill extends closer to the second substrate than the one or more micro-bump lines.

16. The device of claim 15 , wherein the redistribution line comprises a plurality of lines connected to ground, wherein a first micro-bump line of the micro-bump lines comprises a signal micro-bump line, wherein a width of the redistribution line is greater than a width of the signal micro-bump line.

17. The device of claim 15 , wherein a plurality of the micro-bump lines are electrically coupled to the redistribution line.

18. The device of claim 15 , wherein the redistribution line comprises slots.

19. The device of claim 18 , wherein a plurality of the micro-bump lines are coupled the redistribution line, wherein the redistribution line is coupled to ground.

20. The device of claim 15 , wherein the redistribution line is coupled to ground, the one or more micro-bump lines comprise is a signal line, and the first substrate is interposed between the redistribution line and the signal line.

Continuity (3)
Division 14875448 · Oct 5, 2015
Continuation 13750814 · Jan 25, 2013
Related Publication 20190244921A1 · Aug 8, 2019
Cited By (1)
US 12,300,625