Semiconductor device and method of manufacture
An integrated fan out package on package architecture is utilized along with a reference via in order to provide a reference voltage that extends through the InFO-POP architecture. If desired, the reference via may be exposed and then connected to a shield coating that can be used to shield the InFO-POP architecture. The reference via may be exposed by exposing either a top surface or a sidewall of the reference via using one or more singulation processes.
1. A semiconductor device comprising: a first via extending away from a redistribution layer at a first distance; a second via extending away from the redistribution layer at a second distance greater than the first distance; an external connection electrically connecting the second via with a semiconductor device; and a continuous layer in physical contact with the first via, the continuous layer extending over the semiconductor device.
2. The semiconductor device of claim 1 , wherein the continuous layer is in physical contact with only a single side of the first via.
3. The semiconductor device of claim 2 , wherein the continuous layer is in physical contact with a sidewall of the first via, the sidewall being oriented in a direction that is perpendicular with a major surface of the semiconductor device, the major surface facing the second via.
4. The semiconductor device of claim 2 , wherein the continuous layer is in physical contact with a top surface of the first via, the top surface being parallel with a major surface of the semiconductor device, the major surface facing the second via.
5. The semiconductor device of claim 1 , wherein the continuous layer is in physical contact with a first surface of the first via and a second surface of the first via, the first surface being perpendicular to the second surface.
6. The semiconductor device of claim 1 , further comprising an encapsulant extending away from the redistribution layer the second distance.
7. The semiconductor device of claim 1 , wherein the first distance is between about 80 μm and about 250 μm.
8. The semiconductor device of claim 7 , wherein the second distance is between about 100 μm and about 300 μm.
9. A semiconductor device comprising:
a continuous layer in contact with a first via and a second via, the first via and the second via being located with an encapsulant and having a same height;
a first semiconductor device located between the continuous layer and the encapsulant;
a second semiconductor device embedded within the encapsulant; and
a third via electrically connecting the first semiconductor device to a redistribution layer on an opposite side of the encapsulant from the first semiconductor device, the third via being taller than the first via.
10. The semiconductor device of claim 9 , wherein the continuous layer comprises:
an adhesion layer;
a high-conductivity metal; and
an oxidation prevention material.
11. The semiconductor device of claim 10 , wherein the adhesion layer is a layer of titanium with a thickness of between about 0.05 μm and about 0.1 μm.
12. The semiconductor device of claim 11 , wherein the high-conductivity metal is copper with a thickness of between about 2 μm and about 6 μm.
13. The semiconductor device of claim 12 , wherein the oxidation prevention material is nickel with a thickness of between about 0.1 μm and about 0.3 μm.
14. The semiconductor device of claim 10 , wherein each layer of the continuous layer is conformal.
15. A semiconductor device comprising:
a first redistribution layer;
a first semiconductor device over the first redistribution layer;
a first via adjacent to the first semiconductor device on the first redistribution layer;
a second via on the first redistribution layer;
a second semiconductor device over the first semiconductor device and electrically connected to the first via; and
a lid covering the second semiconductor device and extending to be in physical contact with the second via.
16. The semiconductor device of claim 15 , further comprising an encapsulant surrounding the first semiconductor device and the first via.
17. The semiconductor device of claim 16 , wherein the encapsulant has an “L” shaped structure adjacent to the lid.
18. The semiconductor device of claim 16 , wherein the encapsulant has a surface that is planar with a surface of the first via and offset from a surface of the second via.
19. The semiconductor device of claim 16 , wherein the encapsulant has a surface that is planar with both a surface of the first via and a surface of the second via, the surface of the first via facing the second semiconductor device.
20. The semiconductor device of claim 16 , wherein the lid contacts a sidewall of the second via.