Compensating chamber and process effects to improve critical dimension variation for trim process
A controller includes memory that stores data correlating accumulation values to respective adjustment factors. The accumulation values correspond to accumulation of material on surfaces within a processing chamber and the respective adjustment factors correspond to adjustments to a control parameter of RF power provided to the processing chamber. An accumulation calculation module is configured to calculate a first accumulation value indicating an amount of accumulation of the material. An RF power control module is configured to receive the first accumulation value, receive at least one of a setpoint power and a duration of an etching step, retrieve the stored data from the memory, adjust the control parameter based on the first accumulation value, the at least one of the setpoint power and the duration of the etching step, and the stored data, and control the RF power provided to the processing chamber in accordance with the adjusted control parameter.
1. A controller, comprising:
memory that stores data correlating accumulation values to respective adjustment factors, wherein the accumulation values correspond to accumulation of material on surfaces within a processing chamber configured to perform etching and deposition on a substrate, and wherein the respective adjustment factors correspond to adjustments to a control parameter of radio frequency (RF) power provided to the processing chamber while performing an etching step of a patterning process;
an accumulation calculation module configured to calculate a first accumulation value indicating an amount of accumulation of the material; and
an RF power control module configured to
receive the first accumulation value,
receive at least one of a setpoint power to be provided during an etching step and a duration of the etching step,
retrieve the stored data from memory,
adjust the control parameter based on the first accumulation value, the at least one of the setpoint power and the duration of the etching step, and the stored data, and
control the RF power provided to the processing chamber during the etching step in accordance with the control parameter as adjusted.
2. The controller of claim 1 , wherein the control parameter is a magnitude of the RF power, and wherein the RF power control module is configured to determine a first adjustment factor corresponding to the first accumulation value using the stored data and adjust the magnitude of the RF power in accordance with the first adjustment factor.
3. The controller of claim 2 , wherein the stored data is a polynomial correlating the accumulation values to the respective adjustment factors.
4. The controller of claim 2 , wherein the first adjustment factor is a ratio of (i) a magnitude of an RF power required to compensate for the accumulation to (ii) the setpoint power.
5. The controller of claim 2 , wherein the RF power control module is configured to multiply the setpoint power by the first adjustment factor to adjust the control parameter.
6. The controller of claim 1 , wherein the accumulation calculation module is configured to calculate the first accumulation value based on at least one of a number of etching steps performed within the processing chamber, a number of cycles of etching steps and deposition steps performed within the processing chamber, a total duration of etching steps and deposition steps performed within the processing chamber, and a number of substrates processed within the processing chamber.
7. The controller of claim 1 , wherein the control parameter is the duration of the etching step, and wherein the RF power control module is configured to determine a first adjustment factor corresponding to the first accumulation value using the stored data and adjust the duration of the etching step in accordance with the first adjustment factor.
8. The controller of claim 7 , wherein the first adjustment factor corresponds to an amount to increase the duration of the etching step to compensate for the accumulation.
9. The controller of claim 7 , wherein the RF power control module is configured to multiply the duration of the etching step by the first adjustment factor to adjust the control parameter.
10. The controller of claim 7 , wherein the etching step is a trim step.
11. A system comprising the controller of claim 10 , wherein the controller is further configured to perform a spacer layer deposition step within the processing chamber subsequent to the trim step.