IP Library › Granted Patent US 10,847,470
Granted Patent B2
US 10,847,470 · App. 15/889,004 · Granted Nov 24, 2020

Semiconductor package structure and method for manufacturing the same

Inventors: Guo-Cheng Liao (Kaohsiung, TW); Chia Ching Chen (Kaohsiung, TW); Yi Chuan Ding (Kaohsiung, TW)
Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
H01L23/5389H01L21/4853H01L21/4857H01L21/561H01L21/565H01L21/6835H01L23/3114H01L23/3135H01L23/5383H01L23/5386H01L23/552H01L24/19H01L24/20H01L21/568H01L23/3128H01L2221/68345H01L2221/68359H01L2221/68372H01L2224/214H01L2924/19041H01L2924/19105H01L2924/3025
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Quick Facts
Patent No.
US 10,847,470
App. No.
15/889,004
Granted
Nov 24, 2020
Kind
B2
Abstract

A semiconductor package structure includes a first conductive structure, a second conductive structure, a first semiconductor component, a second semiconductor component and a first encapsulant. The first semiconductor component is disposed on the first conductive structure. The first conductive structure includes a first redistribution layer. The second semiconductor component is disposed on the second conductive structure. The second conductive structure includes a second redistribution layer, and the first conductive structure is electrically connected to the second conductive structure. The first encapsulant covers the first semiconductor component and the first conductive structure. A lateral surface of the first conductive structure and a lateral surface of the first encapsulant are non-coplanar.

Claims (17)

1. A method for manufacturing a semiconductor package structure, comprising:

(a) forming a base wiring structure on a first carrier, wherein the base wiring structure includes a first redistribution layer;

(b) singulating the base wiring structure to form a plurality of first conductive structures;

(c) disposing the first conductive structures on a second carrier;

(d) disposing a first semiconductor component on one first conductive structure of the first conductive structures;

(e) forming a first encapsulant to cover the first semiconductor component and a lateral surface of the first conductive structure;

(f) removing the second carrier;

(g) singulating the first encapsulant to form a plurality of unit packages;

(h) disposing the unit packages on a third carrier;

(i) disposing a second semiconductor component on the third carrier;

(j) forming a second encapsulant to cover the second semiconductor component and the unit packages;

(k) removing the third carrier;

(l) forming an outer wiring structure on the unit packages and the second encapsulant, wherein the outer wiring structure includes a second redistribution layer; and

(m) singulating the outer wiring structure and the second encapsulant.

2. The method of claim 1 , wherein after (h), the method further comprises:

(h1) forming a shielding layer to cover the unit packages.

3. The method of claim 2 , wherein the shielding layer contacts the third carrier.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 6, 2018
From: LIAO, GUO-CHENG; CHEN, CHIA CHING; DING, YI CHUAN
To: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
Reel/Frame 046314/0352 →
Continuity (1)
Related Publication 20190244907A1 · Aug 8, 2019
Cited By (1)
US 12,635,572