Semiconductor device
A link device with a large density routing is attached to a package in order to provide a high-density interconnect pathway to interconnect semiconductor devices. In an embodiment the package is an integrated fan out package. The link device may be bonded on either side of the package, and the package may optionally comprise through package vias. The link device may also be an integrated passive device that includes resistors, inductor, and capacitor components.
1. A semiconductor device comprising:
a first semiconductor die;
a second semiconductor die being separated from the first semiconductor die by an encapsulant;
a first linking device bonded to first copper pillars of the first semiconductor die and second copper pillars of the second semiconductor die;
a first redistribution layer over the first linking device;
first conductive material electrically connecting the first semiconductor die to the first redistribution layer and second conductive material electrically connecting the second semiconductor die to the first redistribution layer;
external connectors located on an opposite side of the first redistribution layer from the first linking device; and
a first dielectric material separating the first linking device from the first conductive material and the second conductive material.
2. The semiconductor device of claim 1 , further comprising a dielectric material coplanar with the first linking device.
3. The semiconductor device of claim 1 , wherein the external connectors are part of a ball grid array.
4. The semiconductor device of claim 1 , wherein the external connectors comprise controlled collapse chip connection (C4) bumps.
5. The semiconductor device of claim 1 , wherein the first conductive material comprises copper.
6. The semiconductor device of claim 1 , further comprising a second dielectric material separating the first linking device from the first dielectric material.
7. The semiconductor device of claim 1 , further comprising a second dielectric material surrounding the first copper pillars of the first semiconductor die.
8. A semiconductor device comprising:
a first electrical connector extending through a first dielectric material between a first semiconductor die and a first redistribution layer;
a second electrical connector extending through the first dielectric material between a second semiconductor die and the first redistribution layer;
a first link device bonded to the first semiconductor die and the second semiconductor die and located between the first electrical connector and the second electrical connector;
a second dielectric material at least partially between the first link device and the first dielectric material, the second dielectric material being different from the first dielectric material; and
external connectors located on an opposite side of the first redistribution layer from the first semiconductor die.
9. The semiconductor device of claim 8 , wherein the external connectors comprise controlled collapse chip connection (C4) bumps.
10. The semiconductor device of claim 8 , wherein the external connectors are part of a ball grid array.
11. The semiconductor device of claim 8 , wherein the first electrical connector comprises copper and the second electrical connector comprises copper.
12. The semiconductor device of claim 8 , wherein the first dielectric material and the first linking device are coplanar with each other.
13. The semiconductor device of claim 8 , further comprising a dielectric material surrounding a copper pillar of the first semiconductor die.
14. The semiconductor device of claim 8 , wherein the first link device comprises active devices.
15. A semiconductor device comprising:
a first semiconductor die and a second semiconductor die encapsulated within an encapsulant, the first semiconductor die comprising a first plurality of first copper connectors and the second semiconductor die comprising a second plurality of second copper connectors;
a plurality of copper interconnects connected to respective ones of the first plurality of first copper connectors and respective ones of the second plurality of second copper connectors, the plurality of copper interconnects extending through a first dielectric material;
a third semiconductor die embedded within the first dielectric material, the third semiconductor die being directly bonded to the first plurality of first copper connectors and to the second plurality of second copper connectors, wherein the third semiconductor die and the first dielectric material are co-planar with each other;
a second dielectric material at least partially between the third semiconductor die and the first dielectric material;
a redistribution layer over the third semiconductor die, the first dielectric material and the second dielectric material, the redistribution layer being in electrical connection with the plurality of copper interconnects; and
external connectors electrically connected to the redistribution layer.
16. The semiconductor device of claim 15 , wherein the second dielectric material is co-planar with the third semiconductor die and the first dielectric material.
17. The semiconductor device of claim 15 , wherein the second dielectric material is at least partially between the third semiconductor die and the first semiconductor die.
18. The semiconductor device of claim 15 , wherein the external connectors are conductive bumps.
19. The semiconductor device of claim 15 , wherein the external connectors are part of a ball grid array.
20. The semiconductor device of claim 15 , wherein the external connectors comprise controlled collapse chip connection (C4) bumps.