Image sensor and method for fabricating the same
An electronic device may include a photoelectric element, a shielding layer on the photoelectric element, and a color filter structure on the shielding layer. The shielding layer may define a first opening over the photoelectric element. The color filter structure may define a second opening over the photoelectric element and the first opening. The color filter structure may appear dark from a view facing the color filter structure.
1. An image sensor comprising:
a substrate;
a photoelectric element in the substrate;
a shield layer including a first opening having a first width;
a first layer including a second opening for guiding incident light on the shield layer;
a second layer disposed above the first layer; and
a microlens disposed above the second layer;
wherein the second layer is a planarization layer;
wherein a first end of the second opening has a second width;
wherein a second end of the second opening has a third width;
wherein the second width is different from the first width.
2. The image sensor of claim 1 , wherein the second width is greater than the first width.
3. The image sensor of claim 2 , wherein the third width is greater than the first width.
4. The image sensor of claim 3 , wherein the second width is greater than the third with.
5. The image sensor of claim 2 , wherein the first layer covers only a part of the shield layer without covering the first opening.
6. The image sensor of claim 5 , wherein the first opening is filled with a transparent material.
7. The image sensor of claim 6 , further comprising a lower planarization layer between the photoelectric element and the second layer.
8. The image sensor of claim 7 , wherein the opening is a circular in a plane structure.
9. The image sensor of claim 7 , wherein the first layer includes photoresist.
10. The image sensor comprising:
a first photoelectric element;
a second photoelectric element;
a first layer including a first opening and a second opening;
a second layer including a third opening and a fourth opening; and
a planarization layer disposed above the second layer;
wherein the second layer is disposed above the first layer;
wherein a distance between the first opening and the second opening is greater than a distance between the third opening and the fourth opening; and
wherein the first opening and the third opening are vertically aligned with the first photoelectric element and the second opening and the fourth opening are vertically aligned the second photoelectric element.
11. The image sensor of claim 10 , wherein a width of a first end of the third opening is greater than a width of the first opening.
12. The image sensor of claim 11 , wherein a width of a second end of the third opening is greater than the width of the first opening.
13. The image sensor of claim 12 , wherein the width of the first end of the third opening is greater than the width of the second end of the third opening.
14. The image sensor of claim 13 , wherein the second layer covers only a part of the first layer without covering the first opening and the second opening.
15. The image sensor of claim 14 , wherein the first opening is filled with a transparent material.
16. The image sensor of claim 15 , wherein the opening is a circular in the plan structure.
17. The image sensor comprising:
a substrate;
a photoelectric element in the substrate;
a lower planarization layer disposed above the photoelectric element;
a first layer comprising a first opening for guiding incident light on the shield layer;
an upper planarization layer disposed above the first layer; and
a microlens disposed above the second layer;
wherein a width of a first end of the first opening is greater than a width of a second end of the first opening.
18. The image sensor of claim 16 , wherein the first layer includes photoresist.
19. The image sensor of claim 15 , wherein the second layer includes photoresist.