Power MOSFET with an integrated pseudo-Schottky diode in source contact trench
The present embodiments provide a region of a semiconductor device comprising a plurality of power transistor cells configured as trench MOSFETs in a semiconductor substrate. At least one active power transistor cell further includes a trenched source region wherein a trench bottom surface of the trenched source contact is covered with an insulation layer and layer of a conductive material on top of the insulation layer, to function as an integrated pseudo Schottky barrier diode in the active power transistor cell.
1. An insulated gate semiconductor device comprising:
a region of semiconductor material comprising:
a semiconductor substrate;
a first semiconductor layer of a first conductivity type on the substrate;
an epitaxial layer of the first conductivity type grown on the substrate;
a body region of a second conductivity type formed in the epitaxial layer;
a second semiconductor layer of the first conductivity type on the epitaxial layer having a major surface; and
a plurality of TMOS cells and a plurality of pseudo Schottky (P-Sch) cells, disposed either on the second semiconductor layer or on the epitaxial layer, adjacent and abutting each other, such that each of the plurality of the P-Sch cells is sandwiched between any two of the plurality of the TMOS cells,
wherein each of the plurality of TMOS cells is configured to form an ohmic contact in the body region, and
wherein each of the plurality of P-Sch cells is configured to form a pseudo Schottky barrier diode with the body region.
2. The device according to claim 1 , wherein each of the plurality of TMOS cells further comprises:
a first trench gate region having sidewalls and a bottom;
a second trench gate region having sidewalls and a bottom; and
a trench source region having sidewalls and a bottom,
wherein the first and the second gate regions include a layer of a dielectric material on the side walls and the bottom, and
wherein the trench source region includes a layer of conductive material covering the side walls and on the bottom to form a real Schottky contact with the body region.
3. The device according to claim 2 , wherein each of the plurality of TMOS cells further comprises:
a first shield region recessed in the first trench gate region; and
a second shield region recessed in the second gate region.
4. The device according to claim 3 , wherein each of the plurality of P-Sch cells further comprises:
a first shield region recessed in the first trench gate region; and
a second shield region recessed in the second gate region.
5. The device according to claim 4 , wherein each of the plurality of P-Sch cells further comprises a TMOS unit and a P-Sch unit arranged in a back-to-back fashion, wherein the TMOS unit has a structure similar to that of the TMOS cell, and wherein the P-Sch unit further comprises:
a first trench gate region having sidewalls and a bottom;
a second trench gate region; and
a trench source region having sidewalls and a bottom,
wherein the first and the second trench gate regions include a layer of dielectric material on the bottoms and the side walls, and
wherein the trench source region includes a first layer of an insulating material covering the bottoms and the side walls, and further includes a second layer of a conductive material covering the layer of the insulating material to form a pseudo Schottky contact with the body region.
6. The device according to claim 4 , wherein each of the plurality of P-Sch cells further comprises a TMOS unit and a P-Sch unit arranged in a back-to-back fashion, wherein the TMOS unit has a same structure as the TMOS cell, and wherein the P-Sch unit further comprises:
a first trench gate region having sidewalls and a bottom;
a second trench gate region; and
a trench source region having sidewalls and a bottom,
wherein the first and the second trench gate regions include a layer of dielectric material on the bottom and the side walls, and
wherein the trench source region includes a first layer of an insulating material covering the side walls, and further includes a second layer of a conductive material covering the bottom of the trench source region and the layer of the insulating material on the sidewalls and to form a bottom opened Schottky contact with the expitaxial layer;
and to form a Pseudo-Schottky contact with the sidewalls.
7. The device according to claim 6 , wherein the trench gate regions extend from the major surface and terminate in the epitaxial layer.
8. The device according to claim 6 , wherein the trench source regions extend from the major surface and terminate in the body region.
9. The device according to claim 6 , wherein each of the plurality of the TMOS cells includes localized doped regions of the second conductivity type underneath the trench source region.
10. The device according to claim 1 , wherein a breakdown voltage of the device is at least 5V.
11. The device according to claim 1 , having a maximum leakage current of 10 −6 A/mm 2 when turned off.
12. The device according to claim 1 , wherein a doping concentration of the epitaxial layer is lower than the doping concentration of the first semiconductor layer.
13. The device according to claim 1 , wherein the doping concentration of the epitaxial layer is lower than the doping concentration of the second semiconductor layer.
14. The device according to claim 1 , wherein the P-Sch cell further comprises a plurality of TMOS units and a plurality of P-Sch units arranged in a back-to-back alternating fashion.
15. The device according to claim 1 , wherein the device has a diode forward voltage drop of about 0.3V.
16. The device according to claim 2 , wherein each of the plurality of P-Sch cells further comprises a TMOS unit and a P-Sch unit arranged in a back-to-back fashion, wherein the TMOS unit has a structure similar to that of the TMOS cell, and wherein the P-Sch unit further comprises:
a first trench gate region having sidewalls and a bottom;
a second trench gate region; and
and a trench source region having sidewalls and a bottom,
wherein the first and the second trench gate regions include a layer of dielectric material on the bottoms and the side walls, and
wherein the trench source region includes a first layer of an insulating material covering the side walls, and further includes a second layer of a conductive material covering the bottom of the trench source region and the layer of the insulating material on the sidewalls and to form a bottom opened Schottky contact with the expitaxial layer; and to form a Pseudo-Schottky contact with the sidewalls; and
wherein the P-Sch unit is disposed directly on the body region.
17. The device according to claim 3 , wherein the insulation layer has a thickness between about 5 angstroms and 150 angstroms.
18. The device according to claim 3 , wherein the conductive layer has a depth between about 0.2 micrometers and 0.5 micrometers.