Semiconductor structure and manufacturing method of the same
The present disclosure provides a semiconductor structure, including a bottom electrode via, a top surface of the bottom electrode via having a first width, a barrier layer surrounding the bottom electrode via, and a magnetic tunneling junction (MTJ) over the bottom electrode via, a bottom of the MTJ having a second width, the first width being narrower than the second width.
1. A semiconductor structure, comprising:
a bottom electrode via, comprising a lower portion and an upper portion above the lower portion, wherein a top surface of the bottom electrode via having a first width;
a barrier layer surrounding the bottom electrode via and comprising a first portion between the lower portion and the upper portion of the bottom electrode via; and
a magnetic tunneling junction (MTJ) over the bottom electrode via, a bottom of the MTJ having a second width, the first width being narrower than the second width.
2. The semiconductor structure of claim 1 , further comprising a bottom electrode between the bottom electrode via and the MTJ.
3. The semiconductor structure of claim 2 , wherein the bottom electrode via comprises a portion tapering away from the MTJ and in contact with the bottom electrode.
4. The semiconductor structure of claim 3 , wherein the portion tapering away from the MTJ is laterally surrounded by the barrier layer.
5. The semiconductor structure of claim 2 further comprising an oxide layer surrounding the barrier layer, wherein the barrier layer has a top surface substantially coplanar with a top surface of the oxide layer.
6. The semiconductor structure of claim 5 , wherein the top surface of the oxide layer comprises a first portion substantially coplanar with a bottom surface of the bottom electrode.
7. The semiconductor structure of claim 6 , wherein the top surface of the oxide layer further comprises a second portion lower than the first portion.
8. The semiconductor structure of claim 1 , wherein the barrier layer comprises tantalum or tantalum derivatives.
9. A semiconductor memory structure, comprising:
a bottom electrode via;
a barrier layer surrounding the bottom electrode via;
an oxide layer surrounding the bottom electrode via, wherein a first portion of a top surface of the oxide layer proximal to the bottom electrode via is coplanar with a top surface of the bottom electrode via, a second portion of the top surface of the oxide layer is adjacent to the first portion and is lower than the first portion; and
a magnetic tunneling junction (MTJ) over the bottom electrode via.
10. The semiconductor memory structure of claim 9 , wherein the bottom electrode via has a portion tapering away from the MTJ.
11. The semiconductor memory structure of claim 9 , further comprising a bottom electrode between the MTJ and the bottom electrode via, wherein the bottom electrode has a bottom surface contacting the top surface of the oxide layer.
12. The semiconductor memory structure of claim 9 , wherein the MTJ comprises a seed layer free of tantalum or tantalum derivatives.
13. The semiconductor memory structure of claim 9 , wherein the bottom electrode via comprises titanium nitride, and the barrier layer comprises tantalum.
14. The semiconductor memory structure of claim 9 , wherein the bottom electrode via comprises tungsten, and the barrier layer comprises titanium nitride.
15. The semiconductor memory structure of claim 9 , wherein a width of the bottom electrode is wider than a width of the bottom electrode via.
16. The semiconductor memory structure of claim 9 , further comprising a sidewall spacer over a sidewall of the MTJ, wherein the sidewall spacer is in direct contact with the second portion of the top surface of the oxide layer.
17. A semiconductor structure, comprising:
a bottom electrode via;
a barrier layer surrounding the bottom electrode via;
an oxide layer surrounding the barrier layer, wherein the oxide layer has a concaved portion, the bottom electrode via is free from a coverage of a vertical projection of the concaved portion;
a magnetic tunneling junction (MTJ) over the bottom electrode via; and
a sidewall spacer surrounding the MTJ, wherein a bottom surface of the sidewall spacer is in direct contact with a top surface of the concaved portion.
18. The semiconductor structure of claim 17 , wherein the barrier layer comprises tantalum or tantalum derivatives.
19. The semiconductor structure of claim 17 , wherein a portion of the oxide layer is spacing between the barrier layer and the sidewall spacer.
20. The semiconductor structure of claim 17 , wherein the MTJ has a profile tapering away from the oxide layer, and the bottom electrode via has a profile tapering away from the MTJ.