Method of cutting substrate and method of singulating semiconductor chips

1. A method of cutting a substrate having device regions and a scribe lane region separating the device regions from one another, the method comprising:

forming a passivation layer on the substrate selectively so as to cover the device regions of the substrate but not the scribe lane region;

forming a self-assembled monolayer over the passivation layer; and

cutting into the scribe lane region of the substrate using a plasma.

2. The method of claim 1 , wherein the self-assembled monolayer is formed on the passivation layer with a selectivity greater than 5:1 with respect to the scribe lane region.

3. The method of claim 2 , wherein the self-assembled monolayer has a structure in which self-assembled molecules are packed side-by-side, and

each of the self-assembled molecules comprises a head group, an end group, and a backbone between the head group and the end group.

4. The method of claim 3 , wherein the head group comprises a thiol group (—SH), a silanol group (—SiH 3-x (OH) x ) wherein x is an integer from 1 to 3, a halogen, a hydroxy group (—OH), a phosphoric acid group (—PO 4 ), an alkenyl group having a carbon number of 2 to 6, a dihydroxyphenyl group (—C 6 H 3 (OH) 2 ), or a carboxylic acid group (—COOH).

5. The method of claim 1 , wherein the forming of the passivation layer comprises forming an initial un-activated layer of passivation material, and activating the passivation material before the forming of the self-assembled monolayer.

6. The method of claim 5 , wherein the activating of the passivation material comprises at least one of treating the passivation material with plasma, irradiating the passivation material ultraviolet (UV) light, exposing the passivation material to infrared radiation, and impregnating the passivation material with polyol.

7. The method of claim 1 , wherein the cutting is performed by deep reactive ion etching (DRIE).

8. The method of claim 7 , wherein the cutting forms in the scribe lane region a recess having scalloped sides.

9. The method of claim 7 , wherein the cutting forms in the scribe lane region a recess having a V-shaped cross section.

10. The method of claim 9 , wherein the cutting is preformed such that a bottom of the recess is located within the substrate between two of the device regions that are adjacent to each other, whereby after the cutting has been terminated the two device regions are not completely severed from each other by the recess but remain partially connected to each other.

11. A method of cutting a substrate having device regions and a scribe lane region separating the device regions from one another, the method comprising:

forming a passivation layer on the substrate selectively so as to cover the device regions of the substrate but not the scribe lane region by forming an initial un-activated layer of passivation material and subsequently activating the passivation material;

forming a self-assembled monolayer over the passivation layer; and

forming a recess in the scribe lane region by deep reactive ion etching (DRIE), wherein the DRIE is terminated before the recess extends through the substrate such that at least a part of the scribe lane region of the substrate remains.

12. The method of claim 11 , wherein the recess is formed such that sides thereof are oblique with respect to a top surface of the substrate.

13. The method of claim 11 , wherein the self-assembled monolayer has a structure in which self-assembled molecules are packed side-by-side,

each of the self-assembled molecules comprises a head group, an end group, and a backbone between the head group and the end group, and

the backbone comprises a chain-shaped hydrocarbon.

14. The method of claim 11 , wherein the forming of the self-assembled monolayer comprises dipping the substrate into a solution in which self-assembling molecules are dispersed.