IP Library Granted Patent US 10,879,202
Granted Patent B1
US 10,879,202 · App. 16/523,620 · Granted Dec 29, 2020

System and method for forming solder bumps

Inventors: Eric Peter Lewandowski (White Plains, NY); Jae-Woong Nah (Closter, NJ); Jeng-Bang Yau (Yorktown Heights, NY); Peter Jerome Sorce (Poughkeepsie, NY)
Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
H01L24/11H01L24/12H01L2021/60022H01L2021/60045H01L2021/60067
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Quick Facts
Patent No.
US 10,879,202
App. No.
16/523,620
Granted
Dec 29, 2020
Kind
B1
Abstract

In an embodiment, a method for forming a solder bump includes preparing a transfer mold having a solder pillar extending from a mold substrate and through a first photoresist layer and having a shape partially defined by a second photoresist layer that is removed prior to transfer of the solder. In an embodiment, the mold substrate is flexible. In an embodiment, the transfer mold is flexible. In an embodiment, the method includes providing a device substrate having a wettable pad. In an embodiment, the method includes placing the transfer mold and the device substrate into aligned contact such that the solder pillar is in contact with the wettable pad. In an embodiment, the method includes forming a metallic bond between the solder pillar and the wettable pad. In an embodiment, the method includes removing the mold substrate and first photoresist layer.

Claims (28)

1. A method of forming solder bumps, the method comprising:

preparing a transfer mold having a solder pillar extending from a mold substrate and through a first photoresist layer, the solder pillar having a shape that is partially defined by a second photoresist layer, wherein the preparing of the transfer mold includes removing at least a portion of the second photoresist layer;

configuring a device substrate to include a wettable pad;

aligning the transfer mold and the device substrate such that the solder pillar is aligned with the wettable pad;

forming a metallic bond between the solder pillar and the wettable pad; and

removing the mold substrate and first photoresist layer.

2. The method of claim 1 , wherein the first photoresist layer comprises a permanent photoresist material, and the second photoresist layer comprises a strippable photoresist material.

3. The method of claim 1 , wherein the preparing of the transfer mold comprises forming at least one of:

a wetting layer over the mold substrate;

a seed layer over the mold substrate; and

a non-wetting layer over the second photoresist layer.

4. The method of claim 1 , wherein the mold substrate is flexible, and the preparing of the transfer mold includes forming the transfer mold to be a flexible transfer mold.

5. The method of claim 1 , further comprising forming a hole through the device substrate.

6. The method of claim 5 , further comprising attaching an interposer to a qubit semiconductor device, wherein the qubit semiconductor device comprises a Josephson junction, and wherein the attaching of the interposer to the qubit semiconductor device includes aligning the hole through the interposer with the Josephson junction to provide a path for accessing the Josephson junction.

7. The method of claim 6 , wherein the solder pillar is one of a plurality of solder pillars that are formed around the hole between the qubit semiconductor device and the interposer for providing an amount of thermal isolation of the Josephson junction.

8. The method of claim 1 , wherein the device substrate comprises an organic substrate, and further comprising forming a hole through the device substrate.

9. The method of claim 1 , wherein the solder pillar is one of a plurality of solder pillars of the transfer mold, and wherein the plurality of solder pillars includes a first solder pillar having a first diameter and a second solder pillar having a second diameter, the first diameter being larger than the second diameter.

10. The method of claim 1 , wherein the device substrate comprises a semiconductor substrate, and further comprising forming a deep recess in the semiconductor substrate.

11. The method of claim 10 , wherein the semiconductor substrate comprises a circuit component in the deep recess.

12. The method of claim 1 , wherein the forming of the metallic bond includes a cold-welding process that forms the metallic bond between the solder pillar and the wettable pad.

13. The method of claim 1 , wherein the forming of the metallic bond includes a reflow process that forms the metallic bond between the solder pillar and the wettable pad.

14. The method of claim 1 , wherein the preparing of the transfer mold comprises:

patterning the first and second photoresist layers to define a recess that extends through the first and second photoresist layers; and

using injection molded soldering (IMS) to fill the recess with solder to form the solder pillar.

15. The method of claim 1 , wherein the preparing of the transfer mold comprises:

patterning the first and second photoresist layers to define a recess that extends through the first and second photoresist layers;

forming a seed layer, wherein at least a portion of the seed layer is provided in the recess; and

using electroplating to fill the recess with solder and form the solder pillar.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 26, 2019
From: LEWANDOWSKI, ERIC PETER; NAH, JAE-WOONG; YAU, JENG-BANG; SORCE, PETER JEROME
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 049875/0247 →
Cited By (3)
US 12,519,076 US 12,718,975 US 12,737,517