Elastic wave device, front-end circuit, and communication device
An elastic wave device includes a piezoelectric substrate and an IDT electrode provided on the piezoelectric substrate. The IDT electrode includes a busbar electrode extending in an elastic wave propagation direction and electrode fingers connected to the busbar electrode and extending in a direction perpendicular or substantially perpendicular to the elastic wave propagation direction. The piezoelectric substrate includes a groove extending along the elastic wave propagation direction. The groove is provided on a side across the busbar electrode in the perpendicular or substantially perpendicular direction from a side at which the electrode fingers are located.
1. An elastic wave device comprising:
a piezoelectric substrate; and
an IDT electrode provided on the piezoelectric substrate; wherein
the IDT electrode includes a busbar electrode extending in an elastic wave propagation direction and a plurality of electrode fingers connected to the busbar electrode and extending in a direction perpendicular or substantially perpendicular to the elastic wave propagation direction;
the piezoelectric substrate includes at least one groove extending along the elastic wave propagation direction;
the at least one groove is provided on a side across the busbar electrode in the perpendicular or substantially perpendicular direction from a side at which the plurality of electrode fingers are provided;
the piezoelectric substrate includes a support substrate, a piezoelectric layer above the support substrate, and an intermediate layer between the support substrate and the piezoelectric layer;
the IDT electrode is provided on the piezoelectric layer; and
the at least one groove extends from the piezoelectric layer to at least a portion of the intermediate layer, or the at least one groove is provided in at least a portion of the intermediate layer and is not provided in the piezoelectric layer.
2. The elastic wave device according to claim 1 , wherein
the at least one groove includes a plurality of grooves; and
the plurality of grooves are opposite to each other in the perpendicular or substantially perpendicular direction.
3. The elastic wave device according to claim 1 , wherein the intermediate layer includes grain boundaries.
4. The elastic wave device according to claim 1 , wherein the intermediate layer adjoins the piezoelectric layer.
5. The elastic wave device according to claim 1 , wherein the intermediate layer includes at least one SiO 2 layer.
6. The elastic wave device according to claim 1 , wherein
an acoustic velocity of bulk waves that propagate through the intermediate layer is lower than an acoustic velocity of elastic waves that propagate through the piezoelectric layer; and
an acoustic velocity of bulk waves that propagate through the support substrate is higher than the acoustic velocity of elastic waves that propagate through the piezoelectric layer.
7. The elastic wave device according to claim 6 , wherein the at least one groove extends from the piezoelectric layer to a portion of the support substrate via the intermediate layer.
8. The elastic wave device according to claim 1 , wherein
the intermediate layer includes a low acoustic velocity film and a high acoustic velocity film, an acoustic velocity of bulk waves that propagate through the low acoustic velocity film is lower than an acoustic velocity of elastic waves that propagate through the piezoelectric layer, and an acoustic velocity of bulk waves that propagate through the high acoustic velocity film is higher than the acoustic velocity of elastic waves that propagate through the piezoelectric layer;
the low acoustic velocity film is provided between the piezoelectric layer and the support substrate; and
the high acoustic velocity film is provided between the low acoustic velocity film and the support substrate.
9. The elastic wave device according to claim 1 , wherein
in the intermediate layer, at least one low acoustic impedance layer and at least one high acoustic impedance layer higher in acoustic impedance than the low acoustic impedance layer are laminated; and
at least one of the at least one low acoustic impedance layer is closer to the piezoelectric layer than the high acoustic impedance layer.
10. The elastic wave device according to claim 1 , wherein
an input/output wire that is connected to the IDT electrode is provided on the piezoelectric substrate; and
the at least one groove is provided at a location different from the input/output wire.
11. The elastic wave device according to claim 1 , wherein
an input/output wire that is connected to the IDT electrode is provided on the piezoelectric substrate; and
the input/output wire extends around the groove.
12. A front-end circuit comprising:
the elastic wave device according to claim 1 .
13. The front-end circuit according to claim 12 , wherein
the at least one groove includes a plurality of grooves; and
the plurality of grooves are opposite to each other in the perpendicular or substantially perpendicular direction.
14. A communication device comprising:
the front-end circuit according to claim 12 ; and
a signal processing circuit to process a radio-frequency signal.
15. An elastic wave device comprising:
a piezoelectric substrate; and
an IDT electrode provided on the piezoelectric substrate; wherein
the IDT electrode includes a busbar electrode extending in an elastic wave propagation direction and a plurality of electrode fingers connected to the busbar electrode and extending in a direction perpendicular or substantially perpendicular to the elastic wave propagation direction;
the piezoelectric substrate includes at least one groove extending along the elastic wave propagation direction;
the at least one groove is provided on a side across the busbar electrode in the perpendicular or substantially perpendicular direction from a side at which the plurality of electrode fingers are provided;
the piezoelectric substrate further includes at least one groove extending along the perpendicular or substantially perpendicular direction; and
the at least one groove extending along in the perpendicular or substantially perpendicular direction is disposed outside the electrode finger located at an outermost portion of the plurality of electrode fingers in the elastic wave propagation direction.
16. The elastic wave device according to claim 15 , wherein
the at least one groove extending along the perpendicular or substantially perpendicular direction includes a plurality of grooves; and
the plurality of grooves are opposite to each other in the elastic wave propagation direction.
17. The elastic wave device according to claim 16 , wherein the IDT electrode is surrounded by a plurality of the grooves extending along the elastic wave propagation direction and a plurality of the grooves extending along the perpendicular or substantially perpendicular direction.
18. The elastic wave device according to claim 15 wherein
the piezoelectric substrate includes a support substrate, a piezoelectric layer above the support substrate, and an intermediate layer between the support substrate and the piezoelectric layer;
the IDT electrode is provided on the piezoelectric layer; and
at least one of the at least one groove and the at least one groove extending along in the perpendicular or substantially perpendicular direction extends from the piezoelectric layer to at least a portion of the intermediate layer.