Wafer-level package with enhanced performance and manufacturing method thereof
The present disclosure relates to a wafer-level package that includes a first thinned die having a first device layer, a multilayer redistribution structure, a first mold compound, and a second mold compound. The multilayer redistribution structure includes redistribution interconnects that connect the first device layer to package contacts on a bottom surface of the multilayer redistribution structure. Herein, the connections between the redistribution interconnects and the first device layer are solder-free. The first mold compound resides over the multilayer redistribution structure and around the first thinned die, and extends beyond a top surface of the first thinned die to define an opening within the first mold compound and over the first thinned die. The second mold compound fills the opening and is in contact with the top surface of the first thinned die.
1. A method comprising:
providing a mold wafer having a first die and a first mold compound, wherein:
the first die comprises a first device layer, a first dielectric layer over the first device layer, and a first silicon substrate over the first dielectric layer, wherein the first device layer comprises a plurality of first die contacts at a bottom surface of the first device layer; and
the first mold compound encapsulates sides of the first die, wherein the bottom surface of the first device layer and a top surface of the first silicon substrate are exposed from the first mold compound;
forming a multilayer redistribution structure underneath the mold wafer, wherein:
the multilayer redistribution structure comprises a plurality of package contacts on a bottom surface of the multilayer redistribution structure and redistribution interconnects that connect the plurality of first die contacts to certain ones of the plurality of package contacts;
the multilayer redistribution structure is free of glass fiber; and
connections between the redistribution interconnects and the plurality of first die contacts are solder-free;
removing substantially the first silicon substrate of the first die to provide a first thinned die and form a first opening within the first mold compound and over the first thinned die, wherein the first thinned die has a top surface exposed at a bottom of the opening; and
applying a second mold compound to substantially fill the opening and directly contact the top surface of the first thinned die.
2. The method of claim 1 wherein providing the mold wafer comprises:
applying an adhesive layer over a carrier;
attaching the first die to the adhesive layer, wherein the plurality of first die contacts at the bottom surface of the first device layer are covered by the adhesive layer;
applying the first mold compound over the adhesive layer to encapsulate the first die;
removing the carrier and the adhesive layer to expose the bottom surface of the first device layer; and
thinning down the first mold compound to expose the top surface of the first silicon substrate.
3. The method of claim 1 , wherein the first die provides a microelectromechanical systems (MEMS) component.
4. The method of claim 1 , wherein the first die is formed from a silicon-on-insulator (SOI) structure, wherein the first device layer of the first die is formed from a silicon epitaxy layer of the SOI structure, the first dielectric layer of the first die is a buried oxide layer of the SOI structure, and the first silicon substrate of the first die is a silicon substrate of the SOI structure.
5. The method of claim 1 , wherein the mold wafer further comprises a second intact die, wherein:
the second intact die has a second device layer and an intact silicon substrate over the second device layer;
the second device layer comprises a plurality of second die contacts at a bottom surface of the second device layer; and
the first mold compound encapsulates a top surface and sides of the second intact die, wherein the bottom surface of the second device layer is exposed from the first mold compound.
6. The method of claim 5 , wherein the first die provides a MEMS component and the second intact die provides a complementary metal-oxide-semiconductor (CMOS) controller that controls the MEMS component.
7. The method of claim 1 , wherein the second mold compound has a thermal conductivity greater than 2 W/m·K.
8. The method of claim 1 , wherein the second mold compound has a thermal conductivity greater than 10 W/m·K.
9. The method of claim 1 , wherein the second mold compound has an electrical resistivity greater that 1E6 Ohm-cm.
10. The method of claim 1 , wherein the first mold compound is formed from a same material as the second mold compound.
11. The method of claim 10 , wherein the first mold compound and the second mold compound have a thermal conductivity greater than 2 W/m·K.
12. The method of claim 1 , wherein the first mold compound and the second mold compound are formed from different materials.
13. The method of claim 12 , wherein the first mold compound has a thermal conductivity greater than 2 W/m·K and the second mold compound has a thermal conductivity greater than 10 W/m·K.
14. The method of claim 1 , wherein the first dielectric layer is formed from one of a group consisting of silicon oxide, silicon nitride, and aluminum nitride.
15. The method of claim 1 , wherein the plurality of package contacts are bump contacts or land grid arrays (LGA) contacts.
16. The method of claim 1 , wherein the multilayer redistribution structure is glass-free.