Granted Patent B2

US 12,482,731 · App. 18/254,162 · Granted Nov 25, 2025

Inventors: Julio C. Costa (Oak Ridge, NC); George Maxim (Saratoga, CA); Baker Scott (San Jose, CA)

Assignee: Qorvo US, Inc.

H01L23/49816H01L23/49822H01L24/16H01L24/32H01L24/73H01L25/0657H01L2224/16146H01L2224/16235H01L2224/32146H01L2224/32235H01L2224/73253H01L2225/06517H01L2225/06586H01L2924/15321H01L2924/182

Abstract

Claims (104)

1 . A multi-level three-dimensional (3D) package comprising:

a lower package level that includes a lower redistribution structure and a lower die section over the lower redistribution structure, wherein:

the lower die section includes a lower thinned die, a lower mold compound, a lower intermediary mold compound, and lower vertical via structures, wherein the lower thinned die and the lower mold compound are deposed over the lower redistribution structure, the lower mold compound surrounds the lower thinned die and extends vertically beyond a top surface of the lower thinned die to define a lower opening over the lower thinned die and within the lower mold compound, the lower intermediary mold compound resides over the lower thinned die and fills the lower opening within the lower mold compound, and each lower vertical via structure extends through the lower mold compound;

the lower thinned die includes no silicon substrate and has a thickness less than 100 micrometers; and

a top surface of the lower intermediary mold compound and a top surface of the lower mold compound are coplanar; and

an upper package level that includes an upper redistribution structure over the lower package level and an upper die section over the upper redistribution structure, wherein:

the upper die section includes an upper thinned die, an upper mold compound, and an upper intermediary mold compound, wherein the upper thinned die and the upper mold compound are deposed over the upper redistribution structure, the upper mold compound surrounds the upper thinned die and extends vertically beyond a top surface of the upper thinned die to define an upper opening over the upper thinned die and within the upper mold compound, and the upper intermediary mold compound resides over the upper thinned die and fills the upper opening within the upper mold compound;

the upper thinned die includes no silicon substrate and has a thickness less than 100 micrometers; and

a top surface of the upper intermediary mold compound and a top surface of the upper mold compound are coplanar.

2 . The multi-level 3D package of claim 1 , wherein:

the lower redistribution structure includes a lower dielectric pattern and lower redistribution interconnections within the lower dielectric pattern;

the upper redistribution structure includes an upper dielectric pattern and upper redistribution interconnections within the upper dielectric pattern; and

the lower thinned die is connected to the upper thinned die through the lower redistribution interconnections in the lower redistribution structure, the lower vertical via structures in the lower die section, and the upper redistribution interconnections in the upper redistribution structure.

3 . The multi-level 3D package of claim 2 further comprising a plurality of bump structures formed underneath the lower redistribution structure, wherein:

each of the plurality of bump structures is connected to the lower redistribution interconnections through the lower dielectric pattern;

the plurality of bump structures are separate from each other and protrude from the lower dielectric pattern; and

the plurality of bump structures are copper pillars or solder balls.

4 . The multi-level 3D package of claim 2 further comprising one or more inner package levels vertically stacked between the lower package level and the upper package level, wherein:

each of the one or more inner package levels includes an inner redistribution structure and an inner die section over the inner redistribution structure;

each inner die section includes an inner thinned die, an inner mold compound, an inner intermediary mold compound, and inner vertical via structures, wherein the inner thinned die and the inner mold compound are deposed over the inner redistribution structure, the inner mold compound surrounds the inner thinned die and extends vertically beyond a top surface of the inner thinned die to define an inner opening over the inner thinned die and within the inner mold compound, the inner intermediary mold compound resides over the inner thinned die and fills the inner opening within the inner mold compound, and each inner vertical via structure extends through the inner mold compound;

the inner thinned die includes no silicon substrate and has a thickness less than 100 micrometers; and

a top surface of the inner intermediary mold compound and a top surface of the inner mold compound are coplanar.

5 . The multi-level 3D package of claim 4 , wherein:

each inner redistribution structure includes an inner dielectric pattern and inner redistribution interconnections within the inner dielectric pattern; and

the lower thinned die, the inner thinned die in each of the one or more package levels, and the upper thinned die are connected through the lower redistribution interconnections in the lower redistribution structure, the lower vertical via structures in the lower die section, the inner redistribution interconnections in each inner redistribution structure, the inner vertical via structures in each inner die section, and the upper redistribution interconnections in the upper redistribution structure.

6 . The multi-level 3D package of claim 4 wherein:

at least one inner die section includes a plurality of thinned dies, wherein the inner thinned die is included in the plurality of thinned dies;

the at least one inner die section includes a plurality of intermediary mold compounds, wherein the inner intermediary mold compound is included in the plurality of intermediary mold compounds;

each of the plurality of thinned dies is deposed over the inner redistribution structure and surrounded by the inner mold compound, wherein the inner mold compound extends vertically beyond a top surface of each of the plurality of thinned dies to define an opening over each of the plurality of thinned dies and within the inner mold compound;

each of the plurality of intermediary mold compounds resides over a corresponding one of the plurality of thinned dies and fills a corresponding opening within the inner mold compound;

each of the plurality of thinned dies includes no silicon substrate and has a thickness less than 100 micrometers; and

a top surface of each of the plurality of intermediary mold compounds and a top surface of the inner mold compound are coplanar.

7 . The multi-level 3D package of claim 1 further comprising a top protection structure over the upper die section of the upper package level, wherein:

the top protection structure is in contact with the upper mold compound and the upper intermediary mold compound in the upper die section;

the top protection structure is configured to provide chemical and gas/air contamination protection.

8 . The multi-level 3D package of claim 7 further comprising a metal shield over the top protection structure, wherein the metal shield is configured to provide electromagnetic shielding of the multi-level 3D package.

9 . The multi-level 3D package of claim 1 wherein:

the upper intermediary mold compound is formed of one of a group consisting of organic epoxy resin system, a molding material with a thermal conductivity higher than 50W/mK, a molding material with a magnetic permeability higher than 50, and a molding material with an electric permittivity higher than 10; and

the lower intermediary mold compound is formed of one of a group consisting of organic epoxy resin system, a molding material with a thermal conductivity higher than 50W/mK, a molding material with a magnetic permeability higher than 50, and a molding material with an electric permittivity higher than 10.

10 . The multi-level 3D package of claim 1 wherein the upper thinned die and the lower thinned die are different types of dies.

11 . The multi-level 3D package of claim 10 wherein the upper intermediary mold compound and the lower intermediary mold compound are formed of different materials.

12 . The multi-level 3D package of claim 1 wherein:

at least one of the upper thinned die and the lower thinned die is an active die, which includes an insulating layer, an active layer underneath the insulating layer, and a back-end-of-line (BEOL) portion underneath the active layer;

the active layer is configured to provide one or more active devices; and

the BEOL portion includes dielectric layers and metal structures within the dielectric layers, wherein the metal structures are configured to connect the active devices in the active layer to each other and/or configured to connect the active devices in the active layer to external components.

13 . The multi-level 3D package of claim 12 wherein:

the active die is formed from a silicon-on-insulator (SOI) structure;

the active layer of the active die is formed by integrating the one or more active devices in or on a silicon epitaxy layer of the SOI structure; and

the insulating layer of the active die is a buried oxide layer of the SOI structure.

14 . The multi-level 3D package of claim 1 wherein:

at least one of the upper thinned die and the lower thinned die is a passive die, which includes an insulating layer and a BEOL portion underneath the insulating layer; and

the BEOL portion includes dielectric layers and metal structures within the dielectric layers, wherein the metal structures are configured to provide one or more passive devices and configured to connect the passive devices to external components.

15 . The multi-level 3D package of claim 1 further comprising a top redistribution structure over the upper die section of the upper package level, wherein:

the upper die section further includes upper vertical via structures, each of which extends through the upper mold compound;

the top redistribution structure includes a top dielectric pattern and top redistribution interconnections within the top dielectric pattern; and

the top redistribution interconnections are configured to be connected to the upper vertical via structures.

16 . The multi-level 3D package of claim 15 further comprising one or more un-thinned components residing over the top redistribution structure, wherein:

each of the one or more un-thinned components has a thickness larger than 100 micrometers;

the upper redistribution structure includes an upper dielectric pattern and upper redistribution interconnections within the upper dielectric pattern; and

the one or more un-thinned components are configured to be connected to the upper thinned die through the top redistribution interconnections, the upper vertical via structures, and the upper redistribution interconnections.

17 . The multi-level 3D package of claim 16 wherein each of the one or more un-thinned components is one of a gallium arsenide (GaAs) die, a complementary metal-oxide-semiconductor (CMOS) die, and a surface mounted device (SMD).

18 . The multi-level 3D package of claim 1 further comprising one or more un-thinned components residing underneath the lower redistribution structure of the lower die section, wherein:

each of the one or more un-thinned components has a thickness larger than 100 micrometers;

the lower redistribution structure includes a lower dielectric pattern and lower redistribution interconnections within the lower dielectric pattern; and

the one or more un-thinned components are configured to be connected to the lower thinned die through the lower redistribution interconnections.

19 . The multi-level 3D package of claim 18 further comprising a plurality of bump structures formed underneath the lower redistribution structure, wherein:

each of the plurality of bump structures is connected to the lower redistribution interconnections through the lower dielectric pattern;

each the plurality of bump structures is separate from the one or more un-thinned components underneath the lower redistribution structure, and protrudes from the lower dielectric pattern;

each the plurality of bump structures has a same height and is taller than one or more un-thinned components; and

the plurality of bump structures are copper pillars or solder balls.

20 . The multi-level 3D package of claim 1 wherein:

the lower die section includes a plurality of thinned dies, wherein the lower thinned die is included in the plurality of thinned dies;

the lower die section includes a plurality of intermediary mold compounds, wherein the lower intermediary mold compound is included in the plurality of intermediary mold compounds;

each of the plurality of thinned dies is deposed over the lower redistribution structure and surrounded by the lower mold compound, wherein the lower mold compound extends vertically beyond a top surface of each of the plurality of thinned dies to define an opening over each of the plurality of thinned dies and within the lower mold compound;

each of the plurality of intermediary mold compounds resides over a corresponding one of the plurality of thinned dies and fills a corresponding opening within the lower mold compound;

each of the plurality of thinned dies includes no silicon substrate and has a thickness less than 100 micrometers; and

a top surface of each of the plurality of intermediary mold compounds and a top surface of the lower mold compound are coplanar.

21 . The multi-level 3D package of claim 1 wherein:

the upper die section includes a plurality of thinned dies, wherein the upper thinned die is included in the plurality of thinned dies;

the upper die section includes a plurality of intermediary mold compounds, wherein the upper intermediary mold compound is included in the plurality of intermediary mold compounds;

each of the plurality of thinned dies is deposed over the upper redistribution structure and surrounded by the upper mold compound, wherein the upper mold compound extends vertically beyond a top surface of each of the plurality of thinned dies to define an opening over each of the plurality of thinned dies and within the upper mold compound;

each of the plurality of intermediary mold compounds resides over a corresponding one of the plurality of thinned dies and fills a corresponding opening within the upper mold compound;

each of the plurality of thinned dies includes no silicon substrate and has a thickness less than 100 micrometers; and

a top surface of each of the plurality of intermediary mold compounds and a top surface of the upper mold compound are coplanar.

22 . The multi-level 3D package of claim 1 wherein:

the lower die section includes a plurality of first thinned dies and a plurality of first intermediary mold compounds, wherein:

the lower thinned die is included in the plurality of first thinned dies, and wherein the lower intermediary mold compound is included in the plurality of first intermediary mold compounds;

each of the plurality of first thinned dies is deposed over the lower redistribution structure and surrounded by the lower mold compound, wherein the lower mold compound extends vertically beyond a top surface of each of the plurality of first thinned dies to define a first opening over each of the plurality of first thinned dies and within the lower mold compound;

each of the plurality of first intermediary mold compounds resides over a corresponding one of the plurality of first thinned dies and fills a corresponding first opening within the lower mold compound;

each of the plurality of first thinned dies includes no silicon substrate and has a thickness less than 100 micrometers; and

a top surface of each of the plurality of first intermediary mold compounds and a top surface of the lower mold compound are coplanar; and

the upper die section includes a plurality of second thinned dies and a plurality of second intermediary mold compounds, wherein:

the upper thinned die is included in the plurality of second thinned dies, and wherein the upper intermediary mold compound is included in the plurality of second intermediary mold compounds;

each of the plurality of second thinned dies is deposed over the upper redistribution structure and surrounded by the upper mold compound, wherein the upper mold compound extends vertically beyond a top surface of each of the plurality of second thinned dies to define a second opening over each of the plurality of second thinned dies and within the upper mold compound;

each of the plurality of second intermediary mold compounds resides over a corresponding one of the plurality of second thinned dies and fills a corresponding second opening within the upper mold compound;

each of the plurality of second thinned dies includes no silicon substrate and has a thickness less than 100 micrometers; and

a top surface of each of the plurality of second intermediary mold compounds and a top surface of the upper mold compound are coplanar.

23 . The multi-level 3D package of claim 22 wherein the plurality of first thinned dies in the lower die section and the plurality of second thinned dies in the upper die section have different numbers of thinned dies.

24 . The multi-level 3D package of claim 22 wherein the plurality of first thinned dies in the lower die section and the plurality of second thinned dies in the upper die section have different layouts.

25 . The multi-level 3D package of claim 22 wherein the plurality of first thinned dies in the lower die section and the plurality of second thinned dies in the upper die section provide different functionalities.

26 . The multi-level 3D package of claim 25 wherein:

the plurality of first thinned dies in the lower die section achieves a receiver functionality;

the plurality of second thinned dies in the upper die section achieves a transmitter functionality; and

the upper redistribution structure between the lower die section and the upper die section include an isolation metal shield to isolate signals in the lower die section and the upper die section.

Assignments (1)

Continuity (2)

References Cited (400)