Formation of wrap-around-contact to reduce contact resistivity
A method of forming a source/drain contact is provided. The method includes forming a sacrificial layer on a source/drain, and depositing an oxidation layer on the sacrificial layer. The method further includes heat treating the oxidation layer and the sacrificial layer to form a modified sacrificial layer. The method further includes forming a protective liner on the modified sacrificial layer, and depositing an interlayer dielectric layer on the protective liner. The method further includes forming a trench in the interlayer dielectric layer that exposes a portion of the protective liner.
1. A field effect transistor; comprising:
a gate structure on a substrate;
a source/drain on each of opposite sides of the gate structure and on the substrate;
a source/drain contact on each of the source/drains, wherein each of the source/drain contacts wraps around the sides of one source/drain;
an interlayer dielectric (ILD) layer on opposite sides of each of the source/drain contacts; and
a dielectric protective liner between the ILD layer and the source/drain contact, wherein a portion of each source/drain contact between an underlying source/drain and the dielectric protective liner has an outer shape that matches the outer shape on both sides of the underlying source/drain, and the dielectric protective liner is in contact with the substrate.
2. The field effect transistor of claim 1 , wherein each of the source/drain contacts is formed of a material selected from the group consisting of titanium (Ti), cobalt (Co), and nickel (Ni).
3. The field effect transistor of claim 1 , wherein a portion of the source/drain contact in physical contact with the source/drain has a thickness in a range of about 2 nm to about 4 nm.
4. The field effect transistor of claim 1 , wherein the source/drain contacts are in direct contact with a portion of the substrate on opposite sides of the source/drain.
5. The field effect transistor of claim 1 , further comprising a stack of channel layers between the source/drains, wherein each of the source/drains is in physical and electrical contact with the stack of channel layers.
6. The field effect transistor of claim 5 , further comprising a protective liner on a portion of a gate sidewall spacer of the gate structure.
7. The field effect transistor of claim 6 , wherein each of the source/drain contacts is in direct contact with a portion of the gate sidewall spacer.
8. The field effect transistor of claim 7 , further comprising an inner spacer on each of opposite sides of each channel layer.
9. A field effect transistor; comprising:
a gate structure on a substrate, wherein the gate structure includes a gate sidewall spacer;
a source/drain on opposite sides of the gate structure and on the substrate;
a source/drain contact on opposite sides of each of the source/drains, wherein each of the source/drain contacts wraps around the sides of source/drain and is in contact with the substrate on both sides of the source/drain;
an interlayer dielectric (ILD) layer on each of the source/drain contacts; and
a dielectric protective liner between the ILD layer and the source/drain contact, wherein a portion of each source/drain contact has a thickness in a range of about 2 nm to about 5 nm on both sides of the source/drain that is between an underlying source/drain and the dielectric protective liner, and wherein the dielectric protective liner is on the substrate adjacent to the source/drain contact.
10. The field effect transistor of claim 9 , wherein each of the source/drain contacts is in direct contact with a portion of the gate sidewall spacer.
11. The field effect transistor of claim 10 , wherein the source/drain contacts are in direct contact with a portion of the substrate.
12. The field effect transistor of claim 11 , wherein the source/drains are boron doped silicon germanium (SiGe).
13. The field effect transistor of claim 11 , wherein the boron doped silicon-germanium source/drain have a germanium (Ge) concentration gradient from the outer surface inwards.
14. A field effect transistor; comprising:
a gate structure on a substrate, wherein the gate structure includes a gate sidewall spacer;
a source/drain on opposite sides of the gate structure and on the substrate;
a source/drain contact on opposite sides of each of the source/drains, wherein each of the source/drain contacts wraps around the sides of source/drain and is in contact with the substrate on both sides of the source/drain;
an interlayer dielectric (ILD) layer on opposite sides of each of the source/drain contacts;
a dielectric protective liner between the ILD layer and the source/drain contact, wherein a portion of each source/drain contact between an underlying source/drain and the dielectric protective liner has an outer shape that matches the outer shape on both sides of the underlying source/drain, and wherein the dielectric protective liner is in contact with the substrate adjacent to the source/drain contact; and
a stack of channel layers between the source/drains, wherein each of the source/drains is in physical and electrical contact with the stack of channel layers.
15. The field effect transistor of claim 14 , wherein the protective liner is a dielectric material selected from the group consisting of silicon nitride (SiN) and silicon carbonitride (SiCN).
16. The field effect transistor of claim 15 , wherein each of the source/drain contacts is formed of a material selected from the group consisting of titanium (Ti), cobalt (Co), and nickel (Ni).
17. The field effect transistor of claim 16 , wherein a portion of the source/drain contact in physical contact with the source/drain has a thickness in a range of about 2 nm to about 4 nm.