IP Library Granted Patent US 10,903,167
Granted Patent B2
US 10,903,167 · App. 16/285,813 · Granted Jan 26, 2021

Electronic package, packaging substrate, and methods for fabricating the same

Inventors: Jun-Chang Ding (Taichung, TW); Hong-Da Chang (Taichung, TW); Hsi-Chang Hsu (Taichung, TW)
Assignee: Siliconware Precision Industries Co., Ltd.
H01L23/5383H01L21/561H01L21/563H01L21/566H01L23/3157H01L23/49822H01L23/49838H01L23/5386H01L23/53228H01L24/09H01L24/17H01L2224/0231H01L2224/02379H01L2224/02381H01L2224/0401
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Quick Facts
Patent No.
US 10,903,167
App. No.
16/285,813
Granted
Jan 26, 2021
Kind
B2
Abstract

An electronic package, a packaging substrate, and methods for fabricating the same are disposed. The electronic package includes a circuit structure having a first side and a second side opposing the first side, an electronic component disposed on the first side of the circuit structure, an encapsulation layer formed on the first side of the circuit structure and encapsulating the electronic component, a metal structure disposed on the second side of the circuit structure, and a plurality of conductive elements disposed on the metal structure. The plurality of conductive elements are disposed on the metal structure, rather than disposed on the circuit structure directly. Therefore, the bonding between the conductive elements and the circuit structure is improved, to avoid the plurality of conductive elements from being peeled.

Claims (16)

1. A method for fabricating an electronic package, comprising:

forming on a carrier a bonding layer and a circuit structure having a first side and a second side opposing the first side and bonded to the bonding layer;

disposing at least one electronic component on the first side of the circuit structure;

forming on the first side of the circuit structure an encapsulation layer that encapsulates the at least one electronic component;

removing the carrier and the bonding layer;

forming a metal structure on the second side of the circuit structure;

disposing a plurality of conductive elements on the metal structure; and

after disposing the plurality of conductive elements on the metal structure, removing a portion of the metal structure exposed from the conductive elements.

2. The method of claim 1 , wherein the circuit structure comprises an insulation layer and a circuit layer bonded to the insulation layer and electrically connected to the at least one electronic component.

3. The method of claim 1 , further comprising a plurality of conductive pads disposed on the second side of the circuit structure, wherein the metal structure is disposed on the plurality of conductive pads only.

4. The method of claim 1 , wherein the encapsulation layer does not encapsulate a portion of a surface of the at least one electronic component.

5. The method of claim 1 , wherein the metal structure is a copper layer.

6. The method of claim 1 , wherein the metal structure is electrically connected to the circuit structure.

7. The method of claim 1 , wherein the plurality of conductive elements are electrically connected via the metal structure to the circuit structure.

8. The method of claim 1 , further comprising under bump metallurgy disposed between the plurality of conductive elements and the metal structure.

9. The method of claim 1 , wherein the metal structure is fabricated in a sputtering process.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 26, 2019
From: DING, JUN-CHANG; CHANG, HONG-DA; HSU, HSI-CHANG
To: SILICONWARE PRECISION INDUSTRIES CO., LTD.
Reel/Frame 048442/0539 →
Priority Claims (1)
CN 2018 1 1569234 · Dec 21, 2018 · national
Continuity (1)
Related Publication 20200203277A1 · Jun 25, 2020