Non-volatile memory device and operation method thereof

1. A non-volatile memory device comprising:

a control logic;

a semiconductor layer extending in a first direction;

a gate stack including a plurality of gates and a plurality of insulating layers, both extending in a second direction different than the first direction, and the plurality of gates and the plurality of insulating layers being stacked alternately with each other;

a resistance switching layer extending in the first direction between the gate stack and the semiconductor layer; and

a gate oxide layer extending in the first direction between the gate stack and the resistance switching layer,

wherein a cell string is formed by the gate stack, the resistance switching layer, and the gate oxide layer.

2. The non-volatile memory device of claim 1 , wherein

the cell string comprises a selected memory cell and a non-selected memory cell, and

the control logic is configured to perform a program operation with respect to the selected memory cell by,

applying a first positive voltage to a string selection line connected to the selected memory cell,

grounding a bit line connected to the selected memory cell,

applying a second positive voltage that is greater than the first positive voltage to a word line connected to the selected memory cell, and

applying the first positive voltage to a word line connected to the non-selected memory cell.

3. The non-volatile memory device of claim 1 , wherein

the cell string comprises a selected memory cell and a non-selected memory cell, and

the control logic is configured to perform an erase operation with respect to the selected memory cell by,

applying a first positive voltage to a string selection line connected to the selected memory cell, ground a bit line connected to the selected memory cell,

applying a negative voltage having an absolute value that is greater than an absolute value of the first positive voltage to a word line connected to the selected memory cell, and

applying the first positive voltage to a word line connected to the non-selected memory cell.

4. The non-volatile memory device of claim 2 , wherein

the control logic is further configured to, based on the bit line connected to the selected memory cell being grounded,

cause the first positive voltage to be applied to the word line connected to the non-selected memory cell, and

cause the second positive voltage to be applied to the word line connected to the selected memory cell, a ground channel is formed in the semiconductor layer, and

the selected memory cell is configured such that, based on a voltage difference between a gate corresponding to the selected memory cell and the ground channel based on the second positive voltage to the word line connected to the selected memory cell, oxygen vacancies in the selected memory cell move towards the semiconductor layer such that the program operation with respect to the selected memory cell is performed.

5. The non-volatile memory device of claim 3 , wherein

the control logic is further configured to, based on the bit line connected to the selected memory cell being grounded,

cause the first positive voltage to be applied to the word line connected to the non-selected memory cell, and

cause the negative voltage to be applied to the word line connected to the selected memory cell to form a ground channel in the semiconductor layer due to a fringing field effect caused by the non-selected memory cell that is adjacent to the selected memory cell, and

the memory cell is configured such that, based on a voltage difference between a gate corresponding to the selected memory cell and the ground channel and the negative voltage to the word line connected to the selected memory cell, oxygen vacancies in the selected memory cell move in a direction opposite to the semiconductor layer such that the erase operation with respect to the selected memory cell is performed.

6. The non-volatile memory device of claim 1 , wherein

the cell string includes a selected memory cell and a non-selected memory cell, and

the control logic is configured to perform a read operation with respect to the selected memory cell by,

applying a first positive voltage to a string selection line connected to the selected memory cell,

applying a read voltage to a bit line connected to the selected memory cell,

applying a voltage having an absolute value that is less than an absolute value of the first positive voltage to a word line connected to the selected memory cell, and

applying the first positive voltage to a word line connected to the non-selected memory cell.

7. The non-volatile memory device of claim 6 , wherein

the memory cell is further configured such that a resistance state of the selected memory cell is based on positions of oxygen vacancies in the selected memory cell, and

the control logic is further configured to apply the read voltage to the bit line connected to the selected memory cell and read data based on a read current that is determined by the resistance state of the selected memory cell.

8. The non-volatile memory device of claim 7 , wherein

the selected memory cell is configured to enter a low resistance state as the oxygen vacancies in the selected memory cell move towards the semiconductor layer based on a program operation being performed with respect to the selected memory cell, and

the selected memory cell is configured to enter a high resistance state as the oxygen vacancies in the selected memory cell move in a direction opposite to the semiconductor layer based on an erase operation being performed with respect to the selected memory cell.

9. The non-volatile memory device of claim 1 , wherein

a word plane comprises a plurality of selected memory cells that are connected to a word line, and

the control logic is further configured to perform an erase operation with respect to the plurality of selected memory cells by,

applying a first positive voltage to a plurality of string selection lines connected to the plurality of selected memory cell,

grounding a bit line connected to the plurality of selected memory cells,

applying a negative voltage having an absolute value that is greater than an absolute value of the first positive voltage to the word line, and

applying the first positive voltage to a word line other than the word line.

10. The non-volatile memory device of claim 1 , wherein

the gate, the semiconductor, and the gate oxide layer form a transistor, and

the control logic is further configured to perform a read operation by causing a memory cell included in the cell string corresponding to a circuit in which the transistor and a resistor corresponding to the resistance switching layer to be connected in parallel.

11. The non-volatile memory device of claim 10 , wherein

the cell string comprises a selected memory cell and a non-selected memory cell, and

the control logic is further configured to, based on the control logic performing the read operation,

cause a transistor corresponding to the selected memory cell to be turned off based on a voltage of a word line connected to the selected memory cell, and

cause a transistor corresponding to the non-selected memory cell to be turned on based on a second positive voltage having an absolute value that is greater than an absolute value of the voltage of the word line connected to the non-selected memory cell.

12. The non-volatile memory device of claim 10 , wherein

the cell string comprises a plurality of memory cells, and

the control logic is further configured to perform a program operation or an erase operation by,

causing a bit line connected to the plurality of memory cells to be grounded,

causing the transistor to be turned on based on a positive voltage to a word line connected to the plurality of memory cells so that the ground channel is formed in the semiconductor layer, and

causing the plurality of memory cells corresponding to a circuit in which a resistor corresponding to the resistance switching layer and the ground channel to be connected in series.

13. The non-volatile memory device of claim 2 , wherein the control logic is further configured to apply a positive voltage that is less than the second positive voltage to a bit line other than the bit line connected to the selected memory cell.

14. The non-volatile memory device of claim 3 , wherein the control logic is further configured to apply a negative voltage that is less than the negative voltage to a bit line other than the bit line connected to the selected memory cell.

15. The non-volatile memory device of claim 6 , wherein the control logic is further configured to ground or float a bit line other than the bit line connected to the selected memory cell.

16. The non-volatile memory device of claim 8 , wherein a resistance of the selected memory cell in the low resistance state is greater than a resistance of a ground channel formed in the semiconductor layer.

17. The non-volatile memory device of claim 1 , wherein the resistance switching layer comprises a transition metal oxide or nitride.

18. The non-volatile memory device of claim 8 , wherein the selected memory cell has an ohmic conductive property in the low resistance state.

19. A method of manufacturing a non-volatile memory device, the method comprising:

providing a substrate;

forming a gate stack by alternately stacking a plurality of gates and a plurality of insulating layers on the substrate in a repeated manner;

forming a pillar that exposes the substrate, by etching the gate stack;

conformally depositing a gate oxide layer on the pillar;

conformally depositing a resistance switching layer on the gate oxide layer;

conformally depositing a semiconductor layer on the resistance switching layer; and

filling an insulator in the semiconductor layer,

wherein the resistance switching layer extends in a first direction between the gate stack and the semiconductor layer, and the gate oxide layer extending in the first direction between the gate stack and the resistance switching layer, and

wherein a cell string is formed by the gate stack, the resistance switching layer, and the gate oxide layer.

20. The method of claim 19 , wherein the resistance switching layer is deposited on the gate oxide layer by using atomic layer deposition (ALD) or chemical vapor deposition (CVD).