Variable resistance memory device and electronic device including the same
Provided area a variable resistance memory device and/or an electronic device including the same. The variable resistance memory device includes: a resistance change layer including a metal oxide having an oxygen deficient ratio greater than or equal to about 9%; a semiconductor layer on the resistance change layer; a gate insulating layer on the semiconductor layer; and a plurality of electrodes on the gate insulating layer to be apart from each other.
1 . A variable resistance memory device comprising:
a resistance change layer comprising a metal oxide that includes a first metal element and a second metal element, the metal oxide having an oxygen deficient ratio greater than or equal to about 9%;
a semiconductor layer on the resistance change layer;
a gate insulating layer on the semiconductor layer; and
a plurality of electrodes on the gate insulating layer to be apart from each other.
2 . The variable resistance memory device of claim 1 , wherein a content of the first metal element with respect to an entire metal of the resistance change layer is greater than or equal to about 50 at %.
3 . The variable resistance memory device of claim 1 , wherein a content of the second metal element with respect to an entire metal of the resistance change layer is less than or equal to about 35 at %.
4 . The variable resistance memory device of claim 1 , wherein the first metal element comprises at least one of Ta, Ti, Sn, Cr, and Mn.
5 . The variable resistance memory device of claim 1 , wherein the second metal element comprises at least one of Hf, Al, Nb, La, Zr, Sc, W, V, and Mo.
6 . The variable resistance memory device of claim 1 , wherein the resistance change layer further comprises Si.
7 . The variable resistance memory device of claim 1 , wherein the semiconductor layer is configured to receive a write voltage having an absolute value less than or equal to about 4V is applied thereto.
8 . The variable resistance memory device of claim 1 , further comprising:
an oxide layer between the semiconductor layer and the resistance change layer.
9 . The variable resistance memory device of claim 8 , wherein a thickness of the oxide layer is less than a thickness of the resistance change layer.
10 . The variable resistance memory device of claim 1 , wherein
the resistance change layer comprises a first resistance change layer and a second resistance change layer sequentially arranged in a direction away from the semiconductor layer; and
an oxygen deficient ratio of the first resistance change layer is greater than an oxygen deficient ratio of the second resistance change layer.
11 . The variable resistance memory device of claim 1 , wherein
at least three of the plurality of gate electrodes are arranged periodically, and a pitch of the at least three of the plurality of gate electrodes is less than or equal to about 20 nm.
12 . The variable resistance memory device of claim 1 , further comprising:
a pillar,
wherein the resistance change layer, the semiconductor layer, and the gate insulating layer sequentially surround the pillar in a shell shape, and
the plurality of gate electrodes and an insulating element surround the gate insulating layer in a shell shape.
13 . The variable resistance memory device of claim 12 , wherein the pillar comprises an insulating material.
14 . The variable resistance memory device of claim 12 , wherein the pillar comprises a conductive material.
15 . The variable resistance memory device of claim 14 , wherein the pillar is configured to receive a voltage that is greater than or equal to a voltage applied to the semiconductor layer.
16 . A variable resistance memory device comprising:
a resistance change layer comprising silicon and comprising a metal oxide having an oxygen deficient ratio that is greater than or equal to about 9%;
a semiconductor layer on the resistance change layer;
a gate insulating layer on the semiconductor layer; and
a plurality of electrodes on the gate insulating layer to be apart from each other.
17 . The variable resistance memory device of claim 16 , wherein the resistance change layer comprises at least one of Ta, Ti, Sn, Cr, and Mn.
18 . The variable resistance memory device of claim 16 , wherein a content of silicon with respect to a sum of metals and silicon of the resistance change layer is less than or equal to about 35 at %.
19 . A variable resistance memory device comprising:
a resistance change layer comprising a first metal oxide having an oxygen deficient ratio that is greater than or equal to about 9% and a second metal oxide having an oxygen deficient ratio that is less than 9%, wherein a content of the first metal oxide is greater than a content of the second metal oxide;
a semiconductor layer on the resistance change layer;
a gate insulating layer on the semiconductor layer; and
a plurality of gate electrodes on the gate insulating layer to be apart from each other.
20 . The variable resistance memory device of claim 19 , wherein a content of a metal included in the second metal oxide with respect to entire metal included in the resistance change layer is less than or equal to about 35 at %.