Bulk acoustic wave resonator and method of manufacturing the same

1. A method of manufacturing a bulk acoustic wave resonator, comprising:

forming a sacrificial layer on a substrate protection layer;

forming a membrane layer on the substrate protection layer to cover the sacrificial layer; and

forming a cavity by removing the sacrificial layer using a gas mixture comprising a halide-based gas and an oxygen-containing gas,

wherein a mixture ratio of the halide-based gas to the oxygen-containing gas in the gas mixture is in a range of 1.5 to 2.4.

2. The method of claim 1 , wherein the sacrificial layer comprises polysilicon.

3. The method of claim 1 , wherein the halide-based gas is xenon difluoride (XeF 2 ).

4. The method of claim 1 , wherein the membrane layer has a thickness variation less than or equal to 170 angstroms after the forming of the cavity.

5. The method of claim 1 , wherein the substrate protection layer has a thickness variation less than or equal to 170 angstroms after the forming of the cavity.

6. The method of claim 1 , further comprising:

forming the gas mixture by mixing the oxygen-containing gas and the halide-based gas in a gas mixture supply pipe; and

supplying the gas mixture to a process chamber from the gas mixture supply pipe,

wherein the removing of the sacrificial layer is performed in the process chamber.

7. The method of claim 1 , further comprising:

forming the gas mixture by mixing the oxygen-containing gas and the halide-based gas in a process chamber,

wherein the removing of the sacrificial layer is performed in the process chamber.

8. The method of claim 1 , further comprising:

forming the gas mixture by mixing the oxygen-containing gas and the halide-based gas in a gas mixture storage; and

supplying the gas mixture to a process chamber from the gas mixture storage,

wherein the removing of the sacrificial layer is performed in the process chamber.

9. A bulk acoustic wave resonator, comprising:

a substrate;

a substrate protection layer disposed on a top surface of the substrate;

a membrane layer forming a cavity together with the substrate;

a resonance part disposed on the membrane layer; and

an inlet configured to connect the cavity to an external component,

wherein either one or both of a thickness of the membrane layer and a thickness of the substrate protection layer increases as a distance from the inlet increases, and

wherein a thickness variation of the membrane layer is 170 angstroms or less.

10. The bulk acoustic wave resonator of claim 9 , wherein a ratio of half a width of an active region of the bulk acoustic wave resonator to either one or both of a thickness variation of the substrate protection layer and the thickness variation of the membrane layer is greater than 0.0150 and less than 0.0200.

11. The bulk acoustic wave resonator of claim 9 , wherein the resonance part comprises:

a bottom electrode disposed on the membrane layer,

a piezoelectric layer disposed to cover at least a portion of the bottom electrode, and

a top electrode disposed to cover at least a portion of the piezoelectric layer, and

wherein the bottom electrode and the top electrode are formed of molybdenum or a molybdenum-containing alloy.

12. The bulk acoustic wave resonator of claim 9 , wherein the resonance part comprises:

a bottom electrode disposed on the membrane layer,

a piezoelectric layer disposed to cover at least a portion of the bottom electrode, and

a top electrode disposed to cover at least a portion of the piezoelectric layer, and

wherein the bulk acoustic wave resonator further comprises an insertion layer disposed below a portion of the piezoelectric layer.

13. The bulk acoustic wave resonator of claim 9 , wherein the substrate protection layer has a thickness variation of 170 angstroms or less.

14. The bulk acoustic wave resonator of claim 9 , wherein the thickness of the substrate protection layer in an active region of the bulk acoustic wave resonator is in a range of 10,000 angstroms to 9,830 angstroms, and

wherein the thickness of the membrane layer in the active region is in a range of 500 angstroms to 330 angstroms.

15. The bulk acoustic wave resonator of claim 9 , wherein the substrate protection layer comprises silicon oxide or silicon nitride.

16. The bulk acoustic wave resonator of claim 9 , wherein the membrane layer comprises silicon oxide or silicon nitride.

17. A bulk acoustic wave resonator, comprising:

a substrate;

a substrate protection layer disposed on a top surface of the substrate;

a membrane layer forming a cavity together with the substrate;

a resonance part disposed on the membrane layer; and

an inlet configured to connect the cavity to an external component,

wherein either one or both of a thickness of the membrane layer and a thickness of the substrate protection layer increases as a distance from the inlet increases, and

wherein a ratio of half a width of an active region of the bulk acoustic wave resonator to either one or both of a thickness variation of the substrate protection layer and a thickness variation of the membrane layer is greater than 0.0150 and less than 0.0200.

18. A bulk acoustic wave resonator, comprising:

a substrate;

a substrate protection layer disposed on a top surface of the substrate;

a membrane layer forming a cavity together with the substrate;

a resonance part disposed on the membrane layer; and

an inlet configured to connect the cavity to an external component,

wherein either one or both of a thickness of the membrane layer and a thickness of the substrate protection layer increases as a distance from the inlet increases,

wherein the thickness of the substrate protection layer in an active region of the bulk acoustic wave resonator is in a range of 10,000 angstroms to 9,830 angstroms, and

wherein the thickness of the membrane layer in the active region is in a range of 500 angstroms to 330 angstroms.