Structure of semiconductor device and method for fabricating the same
A structure of a semiconductor device is provided, including a circuit substrate. A first metal bulk layer is disposed on the circuit substrate. A buffer layer is disposed on the first metal bulk layer. An absorbing layer is disposed on the buffer layer. A first electrode layer is disposed on the absorbing layer. A plurality of piezoelectric material units are disposed on the first electrode layer. A protection layer is conformally disposed on the piezoelectric material units. A second metal bulk layer is disposed over the piezoelectric material units, and including a first part and a second part. The first part penetrating through the protection layer is disposed on the piezoelectric material units, serving as a second electrode layer. The second part is at a same level of the first part, and at least electrically connecting to the first electrode layer.
1 . A structure of a semiconductor device, comprising:
a circuit substrate;
a first metal layer, disposed on the circuit substrate;
a buffer layer, disposed on the first metal layer;
an absorbing layer, disposed on the buffer layer;
a first electrode layer, disposed on the absorbing layer;
a piezoelectric material unit, disposed on the first electrode layer;
a protection layer, covering an entirety of a sidewall of the piezoelectric material unit directly connected to a topmost surface and a bottommost surface of the piezoelectric material unit; and
a second metal layer, disposed over the piezoelectric material unit, comprising:
a first part, disposed on the piezoelectric material unit through the protection layer, serving as a second electrode layer; and
a second part, at a same level of the first part, and at least electrically connecting to the first electrode layer,
wherein the absorbing layer comprises an embedded air-gap region surrounded by a dielectric layer and corresponding to the piezoelectric material unit, and the dielectric layer is disposed between the embedded air-gap region and the first electrode layer.
2 . The structure of the semiconductor device according to claim 1 , further comprising an interlayer dielectric layer to support the second metal layer, wherein the protection layer is harder than the interlayer dielectric layer.
3 . The structure of the semiconductor device according to claim 1 , wherein the first electrode layer has a connection part extending beyond the piezoelectric material unit, and a via connects between the connection part and the second part of the second metal layer.
4 . The structure of the semiconductor device according to claim 1 , wherein the second metal layer further comprises a third part electrically connecting to the first metal layer through a via structure.
5 . The structure of the semiconductor device according to claim 4 , wherein the first metal layer also electrically connects to a circuit routing structure of the circuit substrate.
6 . The structure of the semiconductor device according to claim 1 , wherein the circuit substrate comprises a first device circuit layer and a second device circuit layer over the first device circuit layer.
7 . The structure of the semiconductor device according to claim 6 , wherein the first device circuit layer comprises a silicon device, and the second device circuit layer comprises a GaN device.
8 . The structure of the semiconductor device according to claim 7 , wherein the first device circuit layer of the circuit substrate comprises a thermal detecting device.
9 . The structure of the semiconductor device according to claim 1 , wherein the first electrode layer under the piezoelectric material unit is surrounded by an interlayer dielectric layer on the absorbing layer.
10 . A method for fabricating a semiconductor device, comprising:
providing a circuit substrate;
forming a first metal layer on the circuit substrate;
forming a buffer layer on the first metal layer;
forming an absorbing layer on the buffer layer;
forming a first electrode layer on the absorbing layer;
forming a piezoelectric material unit on the first electrode layer;
forming a protection layer, covering an entirety of a sidewall of the piezoelectric material unit directly connected to a topmost surface and a bottommost surface of the piezoelectric material unit; and
forming a second metal layer over the piezoelectric material unit, the second metal layer comprising:
a first part, disposed on the piezoelectric material unit through the protection layer, serving as a second electrode layer; and
a second part, at a same level of the first part, and at least electrically connecting to the first electrode layer,
wherein the step of forming the absorbing layer comprises:
forming a dielectric layer containing a sacrificial material layer embedded in the dielectric layer; and
removing the sacrificial material layer after forming the protection layer on the piezoelectric material unit to form an air-gap region surrounded by the dielectric layer,
wherein the air-gap region corresponds to the piezoelectric material unit, and the dielectric layer is disposed between the air-gap region and the first electrode layer.
11 . The method for fabricating the semiconductor device according to claim 10 , further comprising forming an interlayer dielectric layer to support the second metal layer, wherein the protection layer is harder than the interlayer dielectric layer.
12 . The method for fabricating the semiconductor device according to claim 10 , wherein the first electrode layer has a connection part extending beyond the piezoelectric material unit, and a via is connecting between the connection part and the second part of the second metal layer.
13 . The method for fabricating the semiconductor device according to claim 10 , wherein the second metal layer as formed further comprises a third part electrically connecting to the first metal layer through a via structure.
14 . The method for fabricating the semiconductor device according to claim 13 , wherein the first metal layer also electrically connects to a circuit routing structure of the circuit substrate.
15 . The method for fabricating the semiconductor device according to claim 10 , wherein the circuit substrate as provided comprises a first device circuit layer and a second device circuit layer over the first device circuit layer.
16 . The method for fabricating the semiconductor device according to claim 15 , wherein the first device circuit layer comprises a silicon device, and the second device circuit layer comprises a GaN device.