Rate enhanced pulsed DC sputtering system

1. A pulsed sputtering system, comprising:

a plasma chamber enclosing a first magnetron coupled to a first target, a second magnetron coupled to a second target, and an anode;

a first power source coupled to the first magnetron and the anode, the first power source configured to provide a first anode voltage that alternates between positive and negative relative to the first magnetron during each of multiple cycles;

a second power source coupled to the second magnetron and the anode, the second power source configured to provide a second anode voltage that alternates between positive and negative relative to the second magnetron during each of the multiple cycles; and

a controller programmed to control the first power source and the second power source to phase-synchronize the first anode voltage with the second anode voltage, so both, the first anode voltage and the second anode voltage are simultaneously negative during a portion of each cycle and simultaneously positive relative to the first and second magnetrons during another portion of each cycle, wherein the first anode voltage and the second anode voltage, are simultaneously positive relative to the first and second magnetrons at least 70 percent of a time over the multiple cycles.

2. The system of claim 1 , wherein:

the controller comprises a processor, and the controller is configured with a non-transitory memory comprising non-transitory instructions executable by the processor.

3. The system of claim 1 , wherein:

the controller comprises a field programmable gate array, and the controller is configured with a non-transitory memory including non-transitory instructions accessible by the field programmable gate array to configure the field programmable gate array.

4. The system of claim 1 , wherein:

the first power source comprises a first direct current power supply coupled to a first bi-polar controllable pulsed direct current power supply, the first bi-polar controllable pulsed direct current power supply configured to provide an alternating direct current power to the first magnetron and the anode; and

the second power source comprises a second direct current power supply coupled to a second bi-polar controllable pulsed direct current power supply, the second bi-polar controllable pulsed direct current power supply configured to provide an alternating direct current power to the second magnetron and the anode.

5. The system of claim 1 wherein:

the anode is a floating anode.

6. The system of claim 1 , further comprising:

a first electrical lead for coupling the first power source and the first magnetron;

a second electrical lead for coupling the second power source and the second magnetron; and

a third electrical lead for coupling the first power source, the second power source, and the anode such that an application of power by the first power source and the second power source results in the combined anode power application to the anode.

7. A non-transitory memory including non-transitory instructions that are at least one of executable by a processor to execute a method and accessible by a field programmable gate array to configure the field programmable gate array to execute the method, the method comprising:

causing a first power source to apply a first anode voltage to an anode that alternates between positive and negative relative to a first magnetron in a plasma chamber;

causing a second power source to apply a second anode voltage to the anode that alternates between positive and negative relative to a second magnetron in the plasma chamber; and

causing the first power source and the second power source to phase-synchronize the first anode voltage with the second anode voltage, so both, the first anode voltage and the second anode voltage are simultaneously negative and simultaneously positive relative to the first and second magnetrons over multiple cycles, wherein the first anode voltage and the second anode voltage are simultaneously positive relative to the first and second magnetrons at least 70 percent of a time over the multiple cycles.

8. The non-transitory memory of claim 7 , wherein:

the first power source provides a first current to the first magnetron while the first anode voltage is positive;

the second power source provides a second current to the second magnetron while the second anode voltage is positive;

the first and second power sources provide a combined current to the anode when the first and second anode voltages are negative, wherein the combined current is less than each of the first current and the second current.

9. The non-transitory memory of claim 7 , wherein:

the first anode voltage has a positive magnitude that is the same as a negative magnitude of the first anode voltage; and

the second anode voltage has a positive magnitude that is the same as a negative magnitude of the second anode voltage.

10. The non-transitory memory of claim 7 , wherein:

the anode is a floating anode.

11. A method of pulsed direct current sputtering, comprising:

providing a plasma chamber enclosing a first magnetron coupled to a first target, a second magnetron coupled to a second target, and an anode;

coupling a first power source to the first magnetron and the anode;

coupling a second power source to the second magnetron and the anode;

coupling a controller to both the first and second power sources;

applying, with the first power source, a first anode voltage to the anode that alternates between positive and negative relative to the first magnetron in the plasma chamber;

applying, with the second power source, a second anode voltage to the anode that alternates between positive and negative relative to the second magnetron in the plasma chamber; and

phase-synchronizing, with the controller, the first anode voltage with the second anode voltage, so both, the first anode voltage and the second anode voltage are simultaneously negative and simultaneously positive relative to the first and second magnetrons over multiple cycles, wherein the first anode voltage and the second anode voltage are simultaneously positive relative to the first and second magnetrons at least 70 percent of a time over the multiple cycles.

12. The method of claim 11 , wherein:

the first anode voltage and the second anode voltage are simultaneously positive relative to the first and second magnetrons at least 80 percent of the time over the multiple cycles.

13. The method of claim 11 , wherein:

the first anode voltage and the second anode voltage are simultaneously positive relative to the first and second magnetrons between 70 and 90 percent of a time over the multiple cycles.

14. The method of claim 11 , wherein:

the first power source provides a first current to the first magnetron while the first anode voltage is positive;

the second power source provides a second current to the second magnetron while the second anode voltage is positive;

the first and second power sources provide a combined current to the anode when the first and second anode voltages are negative, wherein the combined current is less than each of the first current and the second current.

15. The method of claim 11 , wherein:

the first anode voltage has a positive magnitude that is the same as a negative magnitude of the first anode voltage; and

the second anode voltage has a positive magnitude that is the same as a negative magnitude of the second anode voltage.

16. The method of claim 11 including:

floating the anode.