IP Library › Granted Patent US 12,406,838
Granted Patent B2
US 12,406,838 · App. 17/122,493 · Granted Sep 2, 2025

Rate enhanced pulsed DC sputtering system

Inventor: Douglas Pelleymounter (Grand Rapids, MN)
Assignee: Advanced Energy Industries, Inc.
H01J37/3476C23C14/3485C23C14/35H01J37/3405H01J37/3438H01J37/3444H01J37/3467H01J2237/2485H01J2237/327H01J2237/332
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Quick Facts
Patent No.
US 12,406,838
App. No.
17/122,493
Granted
Sep 2, 2025
Kind
B2
Abstract

A sputtering system and method are disclosed. The system includes first power source coupled between a first and second power leads, and the first power source provides a first voltage that alternates between positive and negative during each of multiple cycles. The system also includes a second power source coupled between the second power lead and a third power lead, and the second power source provides a second voltage that alternates between positive and negative during each of the multiple cycles. A controller of the system controls the first power source and the second power source to phase-synchronize the first voltage with the second voltage, so both, the first voltage and the second voltage, are simultaneously negative during a portion of each cycle and simultaneously positive during another portion of each cycle.

Claims (46)

1. A pulsed power system, comprising:

a first power lead, a second power lead, and a third power lead;

a first power source coupled to the first power lead and the second power lead, the first power source configured to provide a first voltage to the first power lead that alternates between positive and negative relative to the second power lead during each of multiple cycles;

a second power source coupled to the second power lead and the third power lead, the second power source configured to provide a second voltage to the third power lead that alternates between positive and negative relative to the second power lead during each of the multiple cycles; and

a controller programmed to control the first power source and the second power source to phase-synchronize the first voltage with the second voltage, so both, the first voltage and the second voltage simultaneously cross zero volts.

2. The system of claim 1 , wherein:

the controller comprises a processor, and the controller is configured with a non-transitory memory comprising non-transitory instructions executable by the processor.

3. The system of claim 1 , wherein:

the controller comprises a field programmable gate array, and the controller is configured with a non-transitory memory including non-transitory instructions accessible by the field programmable gate array to configure the field programmable gate array.

4. The system of claim 1 , wherein:

the first power source comprises a first direct current power supply coupled to a first bi-polar controllable pulsed direct current power supply, the first bi-polar controllable pulsed direct current power supply configured to provide an alternating direct current power to the first power lead and the second power lead; and

the second power source comprises a second direct current power supply coupled to a second bi-polar controllable pulsed direct current power supply, the second bi-polar controllable pulsed direct current power supply configured to provide an alternating direct current power to the third power lead and the second power lead.

5. The system of claim 1 , wherein:

the controller is configured to control the first power source and the second power source, so both, the first voltage and the second voltage are simultaneously positive relative to the second power lead at least 70 percent of the multiple cycles.

6. A non-transitory memory including non-transitory instructions that are,

at least one of, executable by a processor to execute a method and accessible by a field programmable gate array to configure the field programmable gate array to execute the method, the method comprising:

causing a first power source to apply a first voltage to a first power lead that alternates between positive and negative relative to a second power lead;

causing a second power source to apply a second voltage to a third power lead that alternates between positive and negative relative to the second power lead; and

causing the first power source and the second power source to phase-synchronize the first voltage with the second voltage, so both, the first voltage and the second voltage simultaneously cross zero volts.

7. The non-transitory memory of claim 6 , wherein:

the first voltage and the second voltage are simultaneously positive at least 70 percent of a time over the multiple cycles.

8. The non-transitory memory of claim 6 , wherein:

the first voltage has a positive magnitude that is the same as a negative magnitude of the first voltage; and

the second voltage has a positive magnitude that is the same as a negative magnitude of the second voltage.

9. A method of pulsed direct current sputtering, comprising:

providing a first power lead, a second power lead, and a third power lead;

coupling a first power source to the first power lead and the second power lead;

coupling a second power source to the third power lead and the second power lead;

coupling a controller to both the first and second power sources;

applying, with the first power source, a first voltage to the first power lead that alternates between positive and negative relative to the first-second power lead;

applying, with the second power source, a second voltage to the third power lead that alternates between positive and negative relative to the second power lead; and

phase-synchronizing, with the controller, the first voltage with the second voltage, so both, the first voltage and the second voltage, are simultaneously cross zero volts.

10. The method of claim 9 , wherein:

the first voltage and the second voltage at the second power lead are simultaneously positive relative to the second power lead at least 70 percent of a time over the multiple cycles.

11. The method of claim 10 , wherein:

the first voltage and the second voltage are simultaneously positive relative to the second power lead at least 80 percent of the time over the multiple cycles.

12. The method of claim 11 , wherein:

the first voltage and the second voltage are simultaneously positive relative to the second power lead between 70 and 90 percent of a time over the multiple cycles.

13. The method of claim 9 , wherein:

the first voltage has a positive magnitude that is the same as a negative magnitude of the first voltage; and

the second voltage has a positive magnitude that is the same as a negative magnitude of the second voltage.

14. The method of claim 9 including:

providing the second power lead as a floating power lead.

15. The system of claim 1 , wherein the controller is programmed to control the first power source and the second power source to phase-synchronize the first voltage with the second voltage, so both, the first voltage and the second voltage simultaneously cross zero volts two times in each cycle.

16. The system of claim 1 , wherein the controller is programmed with hardware.

17. The system of claim 6 , wherein the non-transitory memory comprises non-transitory instructions to cause the first power source and the second power source to phase-synchronize the first voltage with the second voltage, so both, the first voltage and the second voltage simultaneously cross zero volts two times in a cycle.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 5, 2021
From: PELLYMOUNTER, DOUGLAS
To: ADVANCED ENERGY INDUSTRIES, INC.
Reel/Frame 055888/0938 →
Continuity (3)
Continuation 15802791 · Nov 3, 2017
Continuation 14697267 · Apr 27, 2015
Related Publication 20210111010A1 · Apr 15, 2021
References Cited (71)
US 4478700A · Criss · 1984 [cited by applicant]
US 4693805A · Quazi · 1987 [cited by applicant]
US 5427669A · Drummond · 1995 [cited by applicant]
US 5777863A · Kowalevskii · 1998 [cited by examiner]
US 5897753A · Schatz et al. · 1999 [cited by applicant]
US 6005218A · Walde et al. · 1999 [cited by applicant]
US 6063245A · Frach et al. · 2000 [cited by applicant]
US 6183605B1 · Schatz et al. · 2001 [cited by applicant]
US 6222321B1 · Scholl et al. · 2001 [cited by applicant]
US 6338777B1 · Longstreth White · 2002 [cited by applicant]
US 6340416B1 · Goedicke et al. · 2002 [cited by applicant]
US 9812305B2 · Pelleymounter · 2017 [cited by applicant]
US 10373811B2 · Christie · 2019 [cited by examiner]
US 10910203B2 · Pelleymounter · 2021 [cited by examiner]
US 11049702B2 · Pelleymounter · 2021 [cited by examiner]
US 20030209423A1 · Christie · 2003 [cited by examiner]
US 20040075060A1 · Luten et al. · 2004 [cited by applicant]
US 20060278518A1 · Kouznetsov · 2006 [cited by applicant]
US 20090205954A1 · Hanika et al. · 2009 [cited by applicant]
US 20100196624A1 · Ruuttu et al. · 2010 [cited by applicant]
US 20100236919A1 · Alami et al. · 2010 [cited by applicant]
US 20100276283A1 · Muenz et al. · 2010 [cited by applicant]
US 20110120860A1 · Horishita et al. · 2011 [cited by applicant]
US 20110180389A1 · Cremer et al. · 2011 [cited by applicant]
US 20110248633A1 · Nauman et al. · 2011 [cited by applicant]
US 20140234616A1 · Hultman et al. · 2014 [cited by applicant]
US 20160314946A1 · Pelleymounter · 2016 [cited by applicant]
US 20170022604A1 · Christie et al. · 2017 [cited by applicant]
US 20180108520A1 · Pelleymounter · 2018 [cited by applicant]
US 20210287888A1 · Pelleymounter · 2021 [cited by applicant]
CN 102985996A · 2013 [cited by applicant]
CN 103668095A · 2014 [cited by applicant]
DE 102009051056A1 · 2011 [cited by applicant]
EP 0692138B1 · 2004 [cited by applicant]
EP 1458006A1 · 2004 [cited by applicant]
EP 2439763A2 · 2012 [cited by applicant]
EP 2784799A1 · 2014 [cited by applicant]
EP 3089196A1 · 2016 [cited by applicant]
JP H0397846A · 1991 [cited by applicant]
JP 2009284733A · 2009 [cited by applicant]
WO 02103078A1 · 2002 [cited by applicant]
WO 2007051461A1 · 2007 [cited by applicant]
WO 2009040406A2 · 2009 [cited by applicant]
WO 2009131737A1 · 2009 [cited by applicant]
Hochstrasser, M, “Extended European Search Report Regarding Application No. 18889771.4”, Sep. 7, 2021, pp. 9, Published in: EP. [cited by applicant]
Advanced Energy Industries, Inc., “Enhanced Plasma Containment for Inline Sputtering Systems”, Jun. 18, 2008, pp. 4, Published in: US. [cited by applicant]
SIPO, “Office Action Regarding Chinese Patent Application No. 201680003857.6”, Dec. 26, 2018, pp. 15, Published in: CN. [cited by applicant]
SIPO, “Office Action Regarding Application No. 201610490917.3”, May 7, 2019, pp. 14, Published in: CN. [cited by applicant]
SIPO, “Office Action Regarding Chinese Application No. 201610490917.3”, Mar. 9, 2020, pp. 11, Published in: CN. [cited by applicant]
Brayton, John Joseph, “Office Action Regarding U.S. Appl. No. 15/844,438”, Jan. 7, 2021, pp. 48, Published in: US. [cited by applicant]
Anonymous, “PCT Third Party Observation Regarding International Application No. PCT US2018/016223”, Mar. 24, 2020, pp. 7, Published in: PCT. [cited by applicant]
European Patent Office, “Office Action Regarding European Patent Application No. 18889771.4”, Jul. 22, 2020, pp. 3, Published in: EP. [cited by applicant]
Wittman-Regis, Agnes, “International Preliminary Report on Patentability Regarding International Application No. PCT/US2018/016223”, Jun. 25, 2020, pp. 10, Published in: CH. [cited by applicant]
Brayton, John Joseph, “Office Action Regarding U.S. Appl. No. 15/802,791”, Mar. 30, 2020, pp. 36, Published in: US. [cited by applicant]
Hochstrasser, M, “Office Action Regarding European Patent Application No. 18 158 711.4”, Jul. 3, 2020, pp. 5, Published in: EP. [cited by applicant]
Hochstrasser, M, “European Search Report Re Application No. EP18158711”, May 17, 2018, Published in: EP. [cited by applicant]
M. Hochstrasser, “Extended European Search Report Re Application No. 16831032.4”, Feb. 20, 2018, pp. 6, Published in: EPO. [cited by applicant]
Weekes, Chris, “International Search Report and Written Opinion re Application No. PCT/US2016/042389”, Oct. 20, 2016, pp. 11, Published in: AU. [cited by applicant]
Timon Wanga, “United State Final Office Action Re U.S. Appl. No. 14/809,084”, Mar. 27, 2018, pp. 11, Published in: US. [cited by applicant]
Berman, Jason, “Office Action Regarding U.S. Appl. No. 14/809,084”, Aug. 10, 2018, pp. 14, Published in: US. [cited by applicant]
Wanga, Timon, “United States Office Action Re U.S. Appl. No. 14/809,084”, Sep. 22, 2017, pp. 20, Published in: US. [cited by applicant]
Timon Wanga, “United State Office Action Re U.S. Appl. No. 14/809,084”, Jun. 9, 2017, pp. 7, Published in: US. [cited by applicant]
Andrew Rapson, “International Search Report Re Application No. PCT/US2018/016223”, May 7, 2018, pp. 15, Published in: AU. [cited by applicant]
Aguilar, Maria, “European Search Report Re Application No. EP16165652”, Aug. 18, 2016, pp. 2, Published in: EP. [cited by applicant]
Wanga, Timon, “United States Office Action Re U.S. Appl. No. 14/697,267”, Jan. 25, 2017, pp. 18, Published in: US. [cited by applicant]
Advanced Energy, “Ascent DMS Advanced Dual-Magnetron Sputtering Accessories”, 2018, pp. 8, Published in: US. [cited by applicant]
Pelleymounter, D.R., “Raising The Bar on Reactive Deposition Sputter Rates”, “58th Annual Technical Conf Proceedings”, Apr. 28, 2015, pp. 218-222, Publisher: Society of Vacuum Coaters, Published in: US. [cited by applicant]
Scholl, R., “Redundant Anode Sputtering: A Novel Approach to The Disapperaing Anode Problem”, “Retrieved from http://www.advanced-energy.com/upload/File/White_Papers/SL-WHITE2-270-01.pdf”, Jan. 1, 2000, pp. 8. [cited by applicant]
Society of Vacuum Coaters, “List of Abstracts for SVC Technical Program: Apr. 27-30, SVC 58th Annual Technical Conference Proceedings”, Apr. 27, 2015, pp. 58, Published in: US. [cited by applicant]
Notice of Reasons for Rejection received for Japanese Patent Application Serial No. 2020552669 dated Dec. 13, 2021, 6 pages (Including English Translation). [cited by applicant]
Notice of Grounds for Rejection received for Korean Patent Application No. 10-2020-7020262 dated Oct. 4, 2022, Korean Intellectual Property Office, Korea, 8 pages (English Translation). [cited by applicant]