Semiconductor device
Provided is a semiconductor device exemplified by an inverter circuit and a shift register circuit, which is characterized by a reduced number of transistors. The semiconductor device includes a first transistor, a second transistor, and a capacitor. One of a source and a drain of the first transistor is electrically connected to a first wiring, and the other thereof is electrically connected to a second wiring. One of a source and a drain of the second transistor is electrically connected to the first wiring, a gate of the second transistor is electrically connected to a gate of the first transistor, and the other of the source and the drain of the second transistor is electrically connected to one electrode of the capacitor, while the other electrode of the capacitor is electrically connected to a third wiring. The first and second transistors have the same conductivity type.
1. A semiconductor device comprising:
a first transistor;
a second transistor;
a third transistor; and
a capacitor,
wherein one of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the second transistor,
wherein one of a source and a drain of the third transistor is electrically connected to a gate of the first transistor,
wherein a gate of the second transistor is electrically connected to a gate of the third transistor,
wherein a first electrode of the capacitor is electrically connected to the one of the source and the drain of the first transistor, and
wherein a second electrode of the capacitor is electrically connected to the gate of the second transistor.
2. The semiconductor device according to claim 1 ,
wherein the first transistor, the second transistor and the third transistor have the same conductivity type.
3. The semiconductor device according to claim 1 ,
wherein each of the first transistor, the second transistor and the third transistor comprises an oxide semiconductor in a channel formation region.
4. A semiconductor device comprising:
a first transistor;
a second transistor;
a third transistor; and
a capacitor,
wherein one of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the second transistor,
wherein one of a source and a drain of the third transistor is electrically connected to a gate of the first transistor,
wherein a gate of the second transistor is electrically connected to a gate of the third transistor,
wherein a first electrode of the capacitor is electrically connected to the one of the source and the drain of the first transistor,
wherein a second electrode of the capacitor is electrically connected to the gate of the second transistor, and
wherein the other of the source and the drain of the second transistor is electrically connected to the other of the source and the drain of the third transistor.
5. The semiconductor device according to claim 4 ,
wherein the first transistor, the second transistor and the third transistor have the same conductivity type.
6. The semiconductor device according to claim 4 ,
wherein each of the first transistor, the second transistor and the third transistor comprises an oxide semiconductor in a channel formation region.
7. A semiconductor device comprising:
a first transistor;
a second transistor;
a third transistor; and
a capacitor,
wherein one of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the second transistor,
wherein one of a source and a drain of the third transistor is electrically connected to a gate of the first transistor,
wherein a gate of the second transistor is electrically connected to a gate of the third transistor,
wherein a first electrode of the capacitor is electrically connected to the one of the source and the drain of the first transistor,
wherein a second electrode of the capacitor is electrically connected to the gate of the second transistor,
wherein the other of the source and the drain of the second transistor is electrically connected to the other of the source and the drain of the third transistor,
wherein a first potential is supplied to the other of the source and the drain of the first transistor,
wherein a second potential is supplied to the other of the source and the drain of the second transistor, and
wherein a signal is supplied to the second electrode of the capacitor.
8. The semiconductor device according to claim 7 ,
wherein the signal oscillates between a first state and a second state.
9. The semiconductor device according to claim 7 ,
wherein the first transistor, the second transistor and the third transistor have the same conductivity type.
10. The semiconductor device according to claim 7 ,
wherein each of the first transistor, the second transistor and the third transistor comprises an oxide semiconductor in a channel formation region.