Thermal processing susceptor
In one embodiment, a susceptor for thermal processing is provided. The susceptor includes an outer rim surrounding and coupled to an inner dish, the outer rim having an inner edge and an outer edge. The susceptor further includes one or more structures for reducing a contacting surface area between a substrate and the susceptor when the substrate is supported by the susceptor. At least one of the one or more structures is coupled to the inner dish proximate the inner edge of the outer rim.
1. A susceptor for a thermal processing chamber comprising:
an inner dish comprising an inner portion having a first upper surface and an outer depression having a second upper surface below the first upper surface;
an outer rim surrounding and coupled to the inner dish, the outer rim having an inner edge and an outer edge;
an annular ridge extending from the second upper surface of the outer depression of the inner dish and surrounding a center of the inner dish at a radial distance from the center of the inner dish, wherein a height of the annular ridge increases and then decreases with increasing distance from the center of the inner dish; and
a series of bumps extending from the first upper surface of the inner dish, wherein each bump of the series of bumps extends to a top height below a top surface of the annular ridge.
2. The susceptor of claim 1 , wherein the annular ridge is located within 0.5 mm of the inner edge of the outer rim.
3. The susceptor of claim 1 , wherein the series of bumps comprises at least three bumps.
4. The susceptor of claim 3 , wherein no bisection of the inner dish comprises all of the at least three bumps.
5. The susceptor of claim 1 , wherein the annular ridge comprises silicon carbide.
6. The susceptor of claim 1 , wherein the annular ridge comprises graphite coated with silicon carbide.
7. A susceptor for a thermal processing chamber comprising:
an inner dish;
an outer rim surrounding and coupled to the inner dish, the outer rim having an inner edge and an outer edge;
a plurality of concentric annular ridges extending from an upper surface of the inner dish and surrounding a center of the inner dish, each annular ridge having a different diameter;
two or more spokes extending from the center of the inner dish to the inner edge of the outer rim, each spoke extending to a different angular location around the inner edge of the outer rim; and
an angled surface directly connecting the inner dish to the outer rim, wherein
the inner dish is defined by a first radius extending from the center of the inner dish towards the outer rim,
two or more of the plurality of concentric annular ridges are located within a central region of the inner dish,
the central region of the inner dish is defined by a second radius extending from the center of the inner dish, and
the second radius is between 10% and 50% of the first radius.
8. The susceptor of claim 7 , wherein an upper surface of each spoke extends above a top of each concentric annular ridge.
9. The susceptor of claim 7 , wherein the plurality of concentric annular ridges comprises at least ten concentric annular ridges.
10. The susceptor of claim 7 , wherein the plurality of concentric annular ridges comprises at least twenty five concentric annular ridges.
11. A susceptor for a thermal processing chamber comprising:
an inner dish;
an outer rim surrounding and coupled to the inner dish, the outer rim having an inner edge and an outer edge;
a plurality of concentric annular ridges extending from an upper surface of the inner dish and surrounding a center of the inner dish, each annular ridge having a different diameter; and
an angled surface directly connecting the inner dish to the outer rim, wherein
the inner dish is defined by a first radius extending from the center of the inner dish towards the outer rim,
two or more of the plurality of concentric annular ridges are located within a central region of the inner dish,
the central region of the inner dish is defined by a second radius extending from the center of the inner dish,
the second radius is between 10% and 50% of the first radius, and
an outermost annular ridge of the plurality of concentric annular ridges is located within 0.5 mm of the inner edge of the outer rim.
12. A susceptor for a thermal processing chamber comprising:
an inner dish;
an outer rim surrounding and coupled to the inner dish, the outer rim having an inner edge and an outer edge;
a plurality of concentric annular ridges extending from an upper surface of the inner dish and surrounding a center of the inner dish, each annular ridge having a different diameter; and
an angled surface directly connecting the inner dish to the outer rim, wherein
the inner dish is defined by a first radius extending from the center of the inner dish towards the outer rim,
two or more of the plurality of concentric annular ridges are located within a central region of the inner dish,
the central region of the inner dish is defined by a second radius extending from the center of the inner dish,
the second radius is between 10% and 50% of the first radius, and
an upper surface of the angled surface extends above a top of each annular ridge.
13. A susceptor for a thermal processing chamber comprising:
an inner dish;
an outer rim surrounding and coupled to the inner dish, the outer rim having an inner edge and an outer edge;
a first series of bumps extending from an upper surface of the inner dish to a top surface at a first height above the inner dish, wherein each quadrant of the inner dish comprises at least one bump from the first series of bumps; and
a second series of bumps, wherein
the first series of bumps are disposed at a greater radial distance from a center of the inner dish relative to the second series of bumps,
each bump of the second series of bumps extends to a top height below the first height of the top surface of the bumps from the first series of bumps, and
the first height of the top surface of the bumps from the first series of bumps is a highest height of the susceptor inside the outer rim.
14. The susceptor of claim 13 , wherein each bump is located within 0.5 mm of the inner edge of the outer rim.
15. The susceptor of claim 13 , wherein a top of each bump extends above any other surface located within the inner dish.
16. The susceptor of claim 13 , wherein each bump comprises silicon oxide, quartz, or glass.
17. The susceptor of claim 13 , wherein the first series of bumps are the only components of the susceptor located at the first height inside the outer rim.