Semiconductor device and manufacturing method thereof
A method of manufacturing a semiconductor device comprises forming an integrated circuit, surrounding the integrated circuit with an inner seal ring, and surrounding the inner seal ring with a closed-loop outer seal ring. The inner seal ring includes a plurality of metal layers in a stacked configuration, first and second seal portions separated from each other, and third and fourth seal portions spaced apart from the first and second seal portions and separated from each other.
1. A method of manufacturing a semiconductor device, the method comprising:
forming an integrated circuit;
surrounding the integrated circuit with an inner seal ring that includes a plurality of metal layers in a stacked configuration, first and second seal portions separated from each other, and third and fourth seal portions spaced apart from the first and second seal portions and separated from each other;
aligning the first, second, third, and fourth seal portions with each other; and
surrounding the inner seal ring with a closed-loop outer seal ring.
2. The method of claim 1 , further comprising surrounding the closed-loop outer seal ring with a second outer seal ring.
3. The method of claim 1 , further comprising surrounding the closed-loop outer seal ring with a closed-loop second outer seal ring.
4. The method of claim 1 , wherein forming the integrated circuit includes forming at least one of an analog circuit and a digital circuit.
5. The method of claim 1 , wherein aligning the first, second, third, and fourth seal portions with each other comprises arranging the first, second, third, and fourth seal portions along a first side of a boundary between the integrated circuit and the inner seal ring.
6. The method of claim 5 , further comprising arranging a plurality of seal portions along a second side of the boundary opposite the first side of the boundary.
7. The method of claim 5 , further comprising arranging a plurality of seal portions along a second side of the boundary adjacent the first side of the boundary.
8. The method of claim 1 , further comprising:
providing a substrate that includes an isolation, wherein the inner seal ring is formed above the substrate; and
forming a dielectric layer that is between the first and second seal portions and that aligns with the isolation of the substrate.
9. The method of claim 8 , wherein surrounding the integrated circuit with an inner seal ring comprises:
forming one of the metal layers above the substrate;
forming a contact above said one of the metal layers; and
forming another one of the metal layers above the contact.
10. A method of manufacturing a semiconductor device, the method comprising:
forming an isolation in a substrate;
forming an integrated circuit over the substrate;
surrounding the integrated circuit with a first seal ring including:
a plurality of metal layers in a stacked configuration, and
a plurality of seal portions that are separated from each other and that surround first and second corners of a boundary between the first seal ring and the integrated circuit;
forming a dielectric layer sandwiched between the seal portions and aligned with the isolation of the substrate; and
surrounding the first seal ring with a second seal ring.
11. The method of claim 10 , further comprising forming an analog circuit of the integrated circuit, and the first seal ring surrounds the integrated circuit such that the first corner of the boundary is adjacent to the analog circuit of the integrated circuit.
12. The method of claim 10 , further comprising forming the boundary such that the first and second corners are adjacent corners.
13. The method of claim 10 , wherein the second seal ring is a closed-loop.
14. The method of claim 10 , further comprising surrounding the second seal ring with an outer seal ring.
15. The method of claim 14 , wherein the outer seal ring is a closed-loop.
16. The method of claim 14 , wherein the first seal ring, the second seal ring, and the outer seal ring are adjacent to each other.
17. A method for manufacturing a semiconductor device comprising:
forming an integrated circuit over a substrate;
surrounding the integrated circuit with an inner seal ring that has spaced apart first, second, third, and fourth seal portions, wherein surrounding the integrated circuit with the inner seal ring is simultaneous with forming the integrated circuit;
surrounding the inner seal ring with a closed-loop outer seal ring;
forming a first dielectric layer sandwiched between the first and second seal portions and aligned with a first corner of a boundary between the inner seal ring and the integrated circuit; and
forming a second dielectric layer sandwiched between the third and fourth seal portions and aligned with a second corner of the boundary.
18. The method of claim 17 , wherein surrounding the integrated circuit with the inner seal ring includes stacking a plurality of metal layers.
19. The method of claim 18 , wherein surrounding the integrated circuit with an inner seal ring comprises:
forming one of the metal layers above the substrate;
forming a contact above said one of the metal layers; and
forming another of the metal layers above the contact.
20. The method of claim 17 , further comprising:
forming an isolation in the substrate, wherein the first dielectric layer is further aligned with the isolation of the substrate.