Semiconductor device having transistors in which source/drain regions are shared

1. An apparatus comprising:

a semiconductor substrate;

a first diffusion region formed on a surface of the semiconductor substrate, the first diffusion region having a rectangular shape in which a length in a first direction is a first length, the first diffusion region including first and second source/drain regions arranged in the first direction;

a second diffusion region formed on the surface of the semiconductor substrate, the second diffusion region having a rectangular shape in which a length in the first direction is a second length greater than the first length, the second diffusion region including third, fourth and fifth source/drain regions arranged in the first direction;

a first gate electrode extending in a second direction substantially perpendicular to the first direction, and provided between the first and second source/drain regions of the first diffusion region and between the third and fourth source/drain regions of the second diffusion region; and

a second gate electrode extending in the second direction, and provided between the fourth and fifth source/drain regions of the second diffusion region,

wherein the first and third source/drain regions are brought into the same potential as each other, and

wherein the second and fourth source/drain regions are brought into the same potential as each other.

2. The apparatus of claim 1 , further comprising a first wiring electrically connected between the second and fourth source/drain regions.

3. The apparatus of claim 2 , further comprising a third gate electrode extending in the second direction,

wherein the first diffusion region further includes a sixth source/drain region,

wherein the second diffusion region further includes a seventh source/drain region,

wherein the third gate electrode is provided between the first and sixth source/drain regions of the first diffusion region and between the third and seventh source/drain regions of the second diffusion region, and

wherein the sixth and seventh source/drain regions are brought into the same potential as each other.

4. The apparatus of claim 3 , further comprising a second wiring electrically connected between the sixth and seventh source/drain regions.

5. The apparatus of claim 4 , wherein the second wiring is supplied with a power supply potential.

6. The apparatus of claim 1 , wherein the first and third source/drain regions are free from a via conductor.

7. The apparatus of claim 1 , wherein the first and second diffusion regions have a p-type conductivity.

8. An apparatus comprising:

a first power supply line extending in a first direction and supplied with a first power potential;

a second power supply line extending in the first direction and supplied with a second power potential; and.

a plurality of standard cells arranged in the first direction between the first and second power supply lines,

wherein each of the standard cells operates on a voltage between the first and second power potentials,

wherein the plurality of standard cells include a plurality of a first standard cells having the same structure as one another,

wherein each of the first standard cells includes:

a first diffusion region having a rectangular shape in which a length in the first direction is a first length, the first diffusion region including first and second source/drain regions arranged in the first direction;

a second diffusion region having a rectangular shape in which a length in the first direction is a second length greater than the first length, the second diffusion region including third, fourth and fifth source/drain regions arranged in the first direction;

a first gate electrode extending in a second direction substantially perpendicular to the first direction, and provided between the first and second source/drain regions of the first diffusion region and between the third and fourth source/drain regions of the second diffusion region; and

a second gate electrode extending in the second direction, and provided between the fourth and fifth source/drain regions of the second diffusion region,

wherein the first and third source/drain regions are brought into the same potential as each other, and

wherein the second and fourth source/drain regions are brought into the same potential as each other.

9. The apparatus of claim 8 , wherein each of the first standard cells further includes a first wiring electrically connected between the second and fourth source/drain regions.

10. The apparatus of claim 9 , wherein each of the first standard cells further includes a third gate electrode extending in the second direction,

wherein the first diffusion region further includes a sixth source/drain region,

wherein the second diffusion region further includes a seventh source/drain region,

wherein the third gate electrode is provided between the first and sixth source/drain regions of the first diffusion region and between the third and seventh source/drain regions of the second diffusion region, and

wherein the sixth and seventh source/drain regions are brought into the same potential as each other.

11. The apparatus of claim 10 , wherein each of the first standard cells further includes a second wiring electrically connected between the sixth and seventh source/drain regions.

12. The apparatus of claim 11 , wherein the second wiring is supplied with the first power potential.

13. The apparatus of claim 8 , wherein the first and third source/drain regions are free from a via conductor.

14. The apparatus of claim 8 , wherein each of the first standard cells is a latch circuit or a flip-flop circuit.