Substrates, structures within a scribe-line area of a substrate, and methods of forming a conductive line of a redistribution layer of a substrate and of forming a structure within a scribe-line area of the substrate
A substrate comprises a pair of immediately-adjacent integrated-circuit dies having scribe-line area there-between. At least one of the dies comprises insulting material above integrated circuitry. The insulating material has an opening therein that extends elevationally inward to an upper conductive node of integrated circuitry within the one die. The one die comprises a conductive line of an RDL above the insulating material. The RDL-conductive line extends elevationally inward into the opening and is directly electrically coupled to the upper conductive node. The insulating material has a minimum elevational thickness from an uppermost surface of the upper conductive node to an uppermost surface of the insulating material that is immediately-adjacent the insulating-material opening. Insulator material is above a conductive test pad in the scribe-line area. The insulator material has an opening therein that extends elevationally inward to an uppermost surface of the conductive test pad. The insulator material has a minimum elevational thickness from the conductive-test-pad uppermost surface to an uppermost surface of the insulator material that is immediately-adjacent the insulator-material opening and that is less than said minimum elevational thickness of the insulating material. Methods are disclosed.
1. A method of forming a conductive line of a redistribution layer (RDL) of a substrate and of forming a structure within a scribe-line area of the substrate, comprising:
forming a pair of immediately-adjacent integrated-circuit dies having scribe-line area there-between, the dies individually comprising an upper conductive node of integrated circuitry and insulating material directly above the upper conductive node, the scribe-line area comprising a conductive test pad and insulator material directly above the conductive test pad, radiation-imageable material (RIM) being directly above the insulating material and the insulator material;
forming a die opening through the RIM to the insulating material directly above the upper conductive node in individual of the dies and forming a test-pad opening into the RIM directly above the conductive test pad, the RIM being elevationally between a bottom of the RIM-test-pad opening and the insulator material;
using the RIM as masking material while simultaneously etching:
a) the insulating material through the RIM-die opening to form an insulating-material opening to the upper conductive node, and
b) the insulator material through the RIM-test-pad opening to form an insulator-material opening directly above the conductive test pad, the insulator-material being elevationally between a bottom of the insulator-material opening and the conductive test pad;
forming conductive material of an RDL above the insulating material and above the insulator material and into the insulating-material opening and into the insulator-material opening, the RDL-conductive material being directly electrically coupled to the upper conductive node, the insulator material being elevationally between the RDL-conductive material and the conductive test pad; and
patterning the RDL-conductive material to form a RDL-conductive line in the individual dies and to remove all of the RDL-conductive material from being within the insulator-material opening, and thereafter removing a sufficient amount of the insulator material from within the insulator-material opening to extend the insulator-material opening elevationally inward to upwardly expose the conductive test pad.
2. The method of claim 1 comprising forming at least a majority of sidewalls of the extended-insulator-material opening to be at least 25° from vertical.
3. The method of claim 1 comprising, after removing the RDL-conductive material from being within the insulator-material opening and before removing the sufficient amount of the insulator material to upwardly expose the conductive test pad:
reducing elevational thickness of the insulator material aside the insulator-material opening.
4. The method of claim 3 comprising reducing elevational thickness of the insulator material inside the insulator-material opening while the reducing of the elevational thickness of the insulator material aside the insulator-material opening.
5. The method of claim 1 sequentially comprising, after removing the RDL-conductive material from being within the insulator-material opening and before removing the sufficient amount of the insulator material to upwardly expose the conductive test pad:
forming insulative material directly above the RDL-conductive line and within the insulator-material opening; and
removing all of the insulative material from the insulator-material opening.