Seasoning method and etching method
A time required to return an inside of the chamber after performing maintenance of the inside of the chamber into a state prior to the maintenance can be shortened. A seasoning method includes a first dry cleaning process of cleaning the inside of the chamber by supplying an O 2 gas into the chamber and generating plasma of the O 2 gas within the chamber; and a second dry cleaning process of seasoning, after the first dry cleaning process, the inside of the chamber by supplying a processing gas containing fluorine into the chamber and generating plasma of the processing gas within the chamber.
1. A seasoning method, comprising:
putting a chamber in a state of a vacuum and then breaking the vacuum of the chamber;
cleaning an inside of the chamber after breaking the vacuum of the chamber;
returning the chamber back into the vacuum;
a first process of cleaning the inside of the chamber by supplying an O 2 gas into the chamber and generating plasma of the O 2 gas within the chamber and removing a moisture of the component within the chamber; and
after the first process, a second process of seasoning the inside of the chamber by supplying a processing gas containing fluorine into the chamber and generating plasma of the processing gas within the chamber and fluorinating a surface of the component within the chamber,
wherein the first process comprises:
a third process of supplying the O 2 gas into the chamber;
a fourth process of generating the plasma of the O 2 gas supplied into the chamber; and
a fifth process of stopping the supplying of the O 2 gas and exhausting the O 2 gas from the chamber,
wherein the third process to the fifth process are repeated two or more times in the first process, and
the processing gas consists of a Ar gas, a NF 3 gas and a O 2 gas.
2. The seasoning method of claim 1 ,
wherein a time period during which the plasma of the O 2 gas is generated within the chamber in the first process is longer than a time period during which the plasma of the processing gas is generated within the chamber in the second process.
3. The seasoning method of claim 2 ,
wherein the time period during which the plasma of the O 2 gas is generated within the chamber in the first process is equal to or longer than 30 minutes.
4. The seasoning method of claim 1 ,
wherein the second process comprises:
a sixth process of supplying the processing gas into the chamber;
a seventh process of generating the plasma of the processing gas within the chamber; and
an eighth process of exhausting the processing gas from the chamber, and
wherein the sixth process to the eighth process are repeated two or more times in the second process.
5. The seasoning method of claim 1 , further comprising:
a process of supplying a preset gas into the chamber, increasing an internal pressure of the chamber to a preset pressure level and exhausting the preset gas from the chamber prior to the first process.
6. The seasoning method of claim 5 ,
wherein the supplying of the preset gas into the chamber and the exhausting of the preset gas from the chamber are repeated multiple cycles.
7. The seasoning method of claim 1 ,
wherein a power for bias is not applied in the first process and the second process.
8. The seasoning method of claim 1 ,
wherein a time period of a single cycle of the fourth process is shorter than 20 minutes.
9. The seasoning method of claim 8 ,
wherein the time period during which the plasma of the O 2 gas is generated within the chamber in the first process is equal to or longer than 30 minutes.
10. An etching method, comprising:
putting a chamber in a state of a vacuum and then breaking the vacuum of the chamber;
cleaning an inside of the chamber after breaking the vacuum of the chamber;
returning the chamber back into the vacuum;
a seasoning process of seasoning the inside of the chamber after the cleaning of the inside of the chamber;
carrying an etching target wafer into the chamber; and
an etching process of etching the etching target wafer carried into the chamber after the seasoning process is performed,
wherein the seasoning process comprises:
a first process of cleaning an inside of the chamber by supplying an O 2 gas into the chamber and generating plasma of the O 2 gas within the chamber and removing a moisture of the component within the chamber; and
after the first process, a second process of seasoning the inside of the chamber by supplying a processing gas containing fluorine into the chamber and generating plasma of the processing gas within the chamber and fluorinating a surface of the component within the chamber,
wherein the first process comprises:
a third process of supplying the O 2 gas into the chamber;
a fourth process of generating the plasma of the O 2 gas supplied into the chamber; and
a fifth process of stopping the supplying of the O 2 gas and exhausting the O 2 gas from the chamber,
wherein the third process to the fifth process are repeated two or more times in the first process, and
the processing gas consists of a Ar gas, a NF 3 gas and a O 2 gas.