Polishing slurry, method of manufacturing the same, and method of manufacturing semiconductor device

1. A polishing slurry comprising

a composite of a hydrophilic fullerene and an ionic compound, the ionic compound being adsorbed on the hydrophilic fullerene,

wherein the ionic compound comprises tetrabutyl ammonium hydroxide, tetrapropyl ammonium hydroxide, tetraethyl ammonium hydroxide, tetramethyl ammonium hydroxide, or a combination thereof.

2. The polishing slurry of claim 1 , wherein the hydrophilic fullerene comprises at least one hydrophilic functional group bound to a fullerene core and the hydrophilic functional group comprises a hydroxyl group, an amino group, a carbonyl group, a carboxyl group, a sulfhydryl group, a phosphate group, or a combination thereof.

3. The polishing slurry of claim 2 , wherein the hydrophilic fullerene comprises an average of 2 to 44 functional groups bound to the fullerene core.

4. The polishing slurry of claim 1 , wherein the hydrophilic fullerenes is represented by C x (OH) y wherein, x is 60, 70, 74, 76, or 78 and y is 2 to 44.

5. The polishing slurry of claim 1 , wherein the hydrophilic fullerenes is represented by C x (OH) y wherein, x is 60, 70, 74, 76, or 78 and y is 20 to 44.

6. The polishing slurry of claim 1 , further comprising a chelating agent, an oxidizing agent, a surfactant, a dispersing agent, or a combination thereof.

7. A polishing slurry of claim 1 , comprising

a composite of a hydrophilic fullerene and an ionic compound, the ionic compound being adsorbed on the hydrophilic fullerene,

wherein the composite comprising the hydrophilic fullerene and the ionic compound is represented by Chemical Formula 1:

C x (OH) y .(O-IP) z   Chemical Formula 1

wherein, in Chemical Formula 1,

IP is an alkyl-substituted quaternary ammonium salt,

x is 60, 70, 74, 76, or 78,

y is 2 to 44, and

z is 1 to 40.

8. A method of manufacturing the polishing slurry of claim 1 , comprising

combining fullerene, an ionic compound, and an oxidizing agent and a mixed solvent comprising an organic solvent and water to form a mixture, and

heat treating the mixture to form the composite of the hydrophilic fullerene and the ionic compound, wherein the ionic compound comprises tetrabutyl ammonium hydroxide, tetrapropyl ammonium hydroxide, tetraethyl ammonium hydroxide, tetramethyl ammonium hydroxide, or a combination thereof.

9. The method of claim 8 , wherein the heat treating is performed at about 30° C. to about 90° C.

10. The method of claim 8 , wherein the organic solvent comprises toluene, benzene, 1-methylnaphthalene, 1,2,4-trimethylbenzene, p-xylene, or a combination thereof.

11. The method of claim 8 , wherein the ionic compound is provided in an amount of about 10 to about 500 parts by weight based on 100 parts by weight of the fullerene.

12. The method of claim 8 , wherein the hydrophilic fullerene is represented by C x (OH) y wherein, x is 60, 70, 74, 76, or 78 and y is 20 to 44.

13. The method of claim 8 , wherein the composite comprising the hydrophilic fullerene and the ionic compound are present in the water and

the method further comprises removing the organic solvent after forming the composite comprising the hydrophilic fullerene and the ionic compound to provide the polishing slurry.

14. A method of manufacturing a semiconductor device, the method comprising polishing a surface of the semiconductor device using the polishing slurry of claim 1 .

15. A method of polishing a semiconductor device, the method comprising

manufacturing polishing slurry according to the method of claim 8 ; and

polishing a surface of the semiconductor device using the polishing slurry.