Methods of manufacturing semiconductor devices, method sof performing extreme ultraviolet ray exposure, and methods of performing optical proximity correction
A method of manufacturing a semiconductor device includes performing extreme ultraviolet (EUV) lithography that uses a mask for the EUV lithography manufactured by using a design layout on which optical proximity correction (OPC) is performed, and performing the OPC includes dividing respective patterns included in the design layout into partial patterns, classifying the partial patterns into a plurality of partial pattern groups, performing a first OPC on the design layout, and performing a second OPC that is different from the first OPC on the design layout on which the first OPC is performed, wherein performing the first OPC is performed on representative patterns selected from the plurality of partial pattern groups.
1. A method of manufacturing a semiconductor device, the method comprising:
performing optical proximity correction (OPC) on a design layout;
manufacturing a mask for extreme ultraviolet (EUV) lithography depending on a result of the OPC; and
performing EUV lithography using the mask for EUV lithography,
wherein performing the OPC includes:
dividing respective patterns included in the design layout into partial patterns;
classifying the partial patterns into a plurality of partial pattern groups;
performing a first OPC on the design layout; and
performing a second OPC that is different from the first OPC on the design layout on which the first OPC is performed,
wherein performing the first OPC includes correcting representative patterns selected from the plurality of partial pattern groups.
2. The method of claim 1 , wherein performing the first OPC includes correcting the representative patterns iteratively.
3. The method of claim 2 , comprising, after performing the first OPC, applying results of the first OPC of the representative patterns to the partial patterns included in the plurality of the partial pattern groups to which the representative patterns respectively correspond before performing the second OPC.
4. The method of claim 1 , wherein a number of times the first OPC is iteratively performed is greater than a number of times the second OPC is performed.
5. The method of claim 1 , wherein the design layout extends in a first direction and in a second direction that is perpendicular to the first direction, and the partial patterns include row patterns extending in the first direction; column patterns extending in the second direction; and corner patterns, each of which is a connecting part of a row pattern and a column pattern.
6. The method of claim 5 , wherein a maximum length of the partial patterns in the first direction and that of the partial patterns in the second direction are each less than about 11.5 times an EUV wavelength.
7. The method of claim 1 , wherein the classifying of the partial patterns into the plurality of the partial pattern groups includes classifying the partial patterns based on patterns arranged within a patch having edges parallel to and spaced apart from respective edges of a partial pattern.
8. The method of claim 7 , wherein a layout profile of the patch is one of a rectangle and a polygon having an identical number of vertexes as the partial pattern to which the patch corresponds.
9. The method of claim 7 , wherein an edge of the patch is spaced apart from an edge of the partial pattern that is adjacent to the patch by at least 11.5 times a EUV wavelength.
10. The method of claim 7 , wherein the classifying of the partial patterns based on the patterns arranged within the patch includes classifying the patterns within the patch that are identical to each other, identical to each other after a rotation, mirror symmetric to each other, or mirror symmetric to each other after the rotation into an identical partial pattern group.
11. The method of claim 1 , wherein the second OPC is performed on an entire region of the design layout.
12. The method of claim 1 , wherein the first OPC is an OPC not considering aberration and flare, and the second OPC is an OPC considering aberration and flare.
13. A method of performing extreme ultraviolet (EUV) exposure, the method comprising:
performing optical proximity correction (OPC) on a design layout;
inputting mask tape out (MTO) design data obtained via the OPC;
preparing mask data including data format conversion, mask process correction (MPC), and augmentation of job deck with respect to the MTO design data; and
performing an EUV writing operation on a substrate for a mask based on the mask data,
wherein performing the OPC includes: selecting patterns included in the design layout;
performing a plurality of times a first OPC that corrects the selected patterns; and
performing a second OPC that corrects an entire region of the design layout on which the first OPC is iteratively performed.
14. The method of claim 13 , further comprising, after performing the first OPC, applying results of the first OPC to the entire region of the design layout.
15. The method of claim 13 , wherein the first OPC and the second OPC are respectively iterated a plurality of times, and an iteration number of the first OPC is greater than that of the second OPC.
16. A method of performing optical proximity correction (OPC), the method comprising:
dividing respective patterns included in a design layout into partial patterns;
classifying the partial patterns into a plurality of partial pattern groups;
performing a first OPC a plurality of times on representative patterns selected from each of the plurality of partial pattern groups; and
performing a second OPC that is different from the first OPC one or more times on the design layout on which the first OPC is iteratively performed.
17. The method of claim 16 , further comprising, after performing the first OPC and before performing the second OPC, applying results of the first OPC to the partial patterns included in the plurality of the partial pattern groups to which the representative patterns respectively correspond.
18. The method of claim 16 , wherein the classifying of the partial patterns into the plurality of the partial pattern groups includes classifying the partial patterns based on patterns arranged within a quadrilateral patch having edges extending from respective edges of a partial pattern by a certain distance.
19. The method of claim 18 , wherein the classifying of the partial patterns based on the patterns arranged within the patch includes classifying the patterns within the patch that are identical to each other, identical to each other after a rotation, mirror symmetric to each other, or mirror symmetric to each other after the rotation into an identical partial pattern group.
20. The method of claim 16 , wherein the first OPC is an OPC not considering aberration and flare, and the second OPC is an OPC considering aberration and flare.