FinFETs and methods for forming the same
A FinFET includes a semiconductor fin including an inner region, and a germanium-doped layer on a top surface and sidewall surfaces of the inner region. The germanium-doped layer has a higher germanium concentration than the inner region. The FinFET further includes a gate dielectric over the germanium-doped layer, a gate electrode over the gate dielectric, a source region connected to a first end of the semiconductor fin, and a drain region connected to a second end of the semiconductor fin opposite the first end. Through the doping of germanium in the semiconductor fin, the threshold voltage may be tuned.
1. A method comprising:
forming shallow trench isolation regions extending into a semiconductor substrate;
recessing the shallow trench isolation regions, so that a semiconductor material between opposing portions of the shallow trench isolation regions forms a semiconductor fin protruding out of the shallow trench isolation regions;
depositing a germanium-containing semiconductor layer on a top surface and opposing sidewalls of the semiconductor fin;
after the germanium-containing semiconductor layer is deposited, performing an anneal process using a process gas comprising nitrogen (N 2 ), hydrogen (H 2 ), or an inert gas; and
forming an inter-layer dielectric, wherein the inter-layer dielectric extends from a first level higher than the top surface of the semiconductor fin to a second level lower than the top surface of the semiconductor fin.
2. The method of claim 1 , wherein the depositing the germanium-containing semiconductor layer comprises depositing a substantially pure germanium layer.
3. The method of claim 1 , wherein in the anneal process, germanium in the germanium-containing semiconductor layer is driven into the semiconductor fin.
4. The method of claim 3 , wherein the anneal process is stopped before the germanium is driven into an entirety of the semiconductor fin.
5. The method of claim 1 further comprising forming a gate dielectric and a gate electrode on the germanium-containing semiconductor layer.
6. The method of claim 1 , wherein the semiconductor fin comprises a first portion and a second portion, and the germanium-containing semiconductor layer is deposited on the first portion, and when the germanium-containing semiconductor layer is deposited, the second portion is masked from having the germanium-containing semiconductor layer deposited thereon.
7. The method of claim 1 , wherein the depositing the germanium-containing semiconductor layer is performed after the inter-layer dielectric is formed, and the germanium-containing semiconductor layer is deposited into a trench in the inter-layer dielectric.
8. The method of claim 1 , wherein the depositing the germanium-containing semiconductor layer is performed before the inter-layer dielectric is formed.
9. A method comprising:
forming a semiconductor fin protruding higher than top surfaces of isolation regions, wherein the isolation regions have portions on opposite sides of the semiconductor fin;
forming a source/drain region based on a part of the semiconductor fin;
depositing an inter-layer dielectric covering the semiconductor fin;
forming a trench in the inter-layer dielectric to reveal the semiconductor fin;
depositing a germanium-containing semiconductor layer on at least a portion of the semiconductor fin, wherein the germanium-containing semiconductor layer is deposited on a portion of the semiconductor fin exposed to the trench, and wherein the germanium-containing semiconductor layer comprises a top portion on top of the semiconductor fin, and sidewall portions on opposing sidewalls of the semiconductor fin;
forming a gate dielectric over the semiconductor fin; and
forming a gate electrode over the gate dielectric.
10. The method of claim 9 , wherein the germanium-containing semiconductor layer is deposited on a first portion of the semiconductor fin, and the source/drain region is formed based on a second portion of the semiconductor fin.
11. The method of claim 9 further comprising, after the germanium-containing semiconductor layer is deposited, performing an anneal process using a process gas comprising nitrogen (N 2 ), hydrogen (H 2 ), or an inert gas.
12. The method of claim 11 , wherein in the anneal process, germanium is driven into the semiconductor fin.
13. The method of claim 9 , wherein the germanium-containing semiconductor layer comprises silicon germanium.
14. The method of claim 13 further comprising, after the germanium-containing semiconductor layer is deposited, performing a thermal oxidation process using a process gas comprising oxygen (O 2 ).
15. The method of claim 9 , wherein the germanium-containing semiconductor layer is deposited as a conformal layer.
16. The method of claim 9 , wherein the germanium-containing semiconductor layer is deposited before the inter-layer dielectric is deposited.
17. A method comprising:
recessing isolation regions, so that a portion of a semiconductor strip between the isolation regions protrudes higher than top surfaces of the recessed isolation regions to form a semiconductor fin;
depositing a germanium-containing layer on exposed surfaces of a first portion of the semiconductor fin, wherein when the germanium-containing layer is deposited, a second portion of the semiconductor fin is prevented from having the germanium-containing layer deposited thereon;
forming a gate dielectric and a gate electrode on the semiconductor fin; and
forming a source/drain region based on the semiconductor fin.
18. The method of claim 17 , wherein the gate dielectric and the gate electrode are formed on the first portion of the semiconductor fin, and the gate dielectric overlaps the germanium-containing layer.
19. The method of claim 17 , wherein when the germanium-containing layer is deposited, the second portion of the semiconductor fin is covered by an inter-layer dielectric.