Method for manufacturing ceramic electronic component and ceramic electronic component
A method for manufacturing a ceramic electronic component in which a plated electrode can be formed in a region of the surface of a ceramic base body formed of a titanium-containing metal oxide. The method includes preparing a ceramic base body containing a titanium-containing metal oxide, forming a low-resistance section by modifying the metal oxide through irradiation of part of a surface layer portion of the ceramic base body with a pulse laser with a peak power density of 1×10 6 W/cm 2 to 1×10 9 W/cm 2 and a frequency of 500 kHz or less, and forming an electrode on the low-resistance section by electroplating. The laser irradiation generates an O defect in a titanium-containing metal oxide, such as BaTiO 3 to form an n-type semiconductor. Since this semiconductor section has a lower resistance value than the metal oxide, plating metal can be selectively deposited by electroplating.
1. A method for manufacturing a ceramic electronic component, the method comprising:
preparing a ceramic base body containing a titanium-containing metal oxide;
forming a low-resistance section by modifying the metal oxide through irradiation of part of a surface layer portion of the ceramic base body with a pulse laser; and
forming an electrode on the low-resistance section by electroplating,
wherein the irradiation with the pulse laser is performed with a peak power density of 1×10 6 W/cm 2 to 1×10 9 W/cm 2 and a frequency of 500 kHz or less.
2. The method for manufacturing a ceramic electronic component according to claim 1 , wherein the metal oxide is formed into an n-type semiconductor in the low-resistance section.
3. The method for manufacturing a ceramic electronic component according to claim 1 , wherein
the irradiation with the pulse laser is performed with a peak power density of 1×10 6 W/cm 2 to 1×10 8 W/cm 2 and a frequency of 10 kHz to 100 kHz.
4. The method for manufacturing a ceramic electronic component according to claim 1 , wherein the ceramic base body contains BaTiO 3 .
5. The method for manufacturing a ceramic electronic component according to claim 1 , wherein
the ceramic electronic component is a multilayer ceramic capacitor;
a plurality of end portions of inner electrodes is exposed on each of both end surfaces of the ceramic electronic component;
the low-resistance section is formed in at least one side surface adjacent to the both end surfaces of the ceramic electronic component in such a manner that the low-resistance section is formed in each of portions of the side surface that adjoin the respective end surfaces; and
the electrode is continuously formed on each end surface and each low-resistance section of the ceramic electronic component.
6. The method for manufacturing a ceramic electronic component according to claim 2 , wherein
the irradiation with the pulse laser is performed with a peak power density of 1×10 6 W/cm 2 to 1×10 8 W/cm 2 and a frequency of 10 kHz to 100 kHz.
7. The method for manufacturing a ceramic electronic component according to claim 2 , wherein the ceramic base body contains BaTiO 3 .
8. The method for manufacturing a ceramic electronic component according to claim 3 , wherein the ceramic base body contains BaTiO 3 .
9. The method for manufacturing a ceramic electronic component according to claim 6 , wherein the ceramic base body contains BaTiO 3 .
10. The method for manufacturing a ceramic electronic component according to claim 2 , wherein
the ceramic electronic component is a multilayer ceramic capacitor;
a plurality of end portions of inner electrodes is exposed on each of both end surfaces of the ceramic electronic component;
the low-resistance section is formed in at least one side surface adjacent to the both end surfaces of the ceramic electronic component in such a manner that the low-resistance section is formed in each of portions of the side surface that adjoin the respective end surfaces; and
the electrode is continuously formed on each end surface and each low-resistance section of the ceramic electronic component.
11. The method for manufacturing a ceramic electronic component according to claim 3 , wherein
the ceramic electronic component is a multilayer ceramic capacitor;
a plurality of end portions of inner electrodes is exposed on each of both end surfaces of the ceramic electronic component;
the low-resistance section is formed in at least one side surface adjacent to the both end surfaces of the ceramic electronic component in such a manner that the low-resistance section is formed in each of portions of the side surface that adjoin the respective end surfaces; and
the electrode is continuously formed on each end surface and each low-resistance section of the ceramic electronic component.
12. The method for manufacturing a ceramic electronic component according to claim 4 , wherein
the ceramic electronic component is a multilayer ceramic capacitor;
a plurality of end portions of inner electrodes is exposed on each of both end surfaces of the ceramic electronic component;
the low-resistance section is formed in at least one side surface adjacent to the both end surfaces of the ceramic electronic component in such a manner that the low-resistance section is formed in each of portions of the side surface that adjoin the respective end surfaces; and
the electrode is continuously formed on each end surface and each low-resistance section of the ceramic electronic component.
13. The method for manufacturing a ceramic electronic component according to claim 6 , wherein
the ceramic electronic component is a multilayer ceramic capacitor;
a plurality of end portions of inner electrodes is exposed on each of both end surfaces of the ceramic electronic component;
the low-resistance section is formed in at least one side surface adjacent to the both end surfaces of the ceramic electronic component in such a manner that the low-resistance section is formed in each of portions of the side surface that adjoin the respective end surfaces; and
the electrode is continuously formed on each end surface and each low-resistance section of the ceramic electronic component.
14. The method for manufacturing a ceramic electronic component according to claim 7 , wherein
the ceramic electronic component is a multilayer ceramic capacitor;
a plurality of end portions of inner electrodes is exposed on each of both end surfaces of the ceramic electronic component;
the low-resistance section is formed in at least one side surface adjacent to the both end surfaces of the ceramic electronic component in such a manner that the low-resistance section is formed in each of portions of the side surface that adjoin the respective end surfaces; and
the electrode is continuously formed on each end surface and each low-resistance section of the ceramic electronic component.
15. The method for manufacturing a ceramic electronic component according to claim 8 , wherein
the ceramic electronic component is a multilayer ceramic capacitor;
a plurality of end portions of inner electrodes is exposed on each of both end surfaces of the ceramic electronic component;
the low-resistance section is formed in at least one side surface adjacent to the both end surfaces of the ceramic electronic component in such a manner that the low-resistance section is formed in each of portions of the side surface that adjoin the respective end surfaces; and
the electrode is continuously formed on each end surface and each low-resistance section of the ceramic electronic component.
16. The method for manufacturing a ceramic electronic component according to claim 9 , wherein
the ceramic electronic component is a multilayer ceramic capacitor;
a plurality of end portions of inner electrodes is exposed on each of both end surfaces of the ceramic electronic component;
the low-resistance section is formed in at least one side surface adjacent to the both end surfaces of the ceramic electronic component in such a manner that the low-resistance section is formed in each of portions of the side surface that adjoin the respective end surfaces; and
the electrode is continuously formed on each end surface and each low-resistance section of the ceramic electronic component.
17. A ceramic electronic component comprising:
a ceramic base body containing a titanium-containing metal oxide;
a low-resistance section formed in part of a surface layer portion of the ceramic base body and obtained by modifying the metal oxide; and
an electrode formed on the low-resistance section and made of a plating metal,
wherein the metal oxide is formed into an n-type semiconductor in the low-resistance section.
18. The ceramic electronic component according to claim 17 , wherein the ceramic base body contains BaTiO 3 .
19. The ceramic electronic component according to according to claim 17 , wherein
the ceramic electronic component is a multilayer ceramic capacitor;
a plurality of end portions of inner electrodes is exposed on each of both end surfaces of the ceramic electronic component;
the low-resistance section is formed in at least one side surface adjacent to the both end surfaces of the ceramic electronic component in such a manner that the low-resistance section is formed in each of portions of the side surface that adjoin the respective end surfaces; and
the electrode made of a plating metal is continuously formed on each end surface and each low-resistance section of the ceramic electronic component.
20. The ceramic electronic component according to according to claim 18 , wherein
the ceramic electronic component is a multilayer ceramic capacitor;
a plurality of end portions of inner electrodes is exposed on each of both end surfaces of the ceramic electronic component;
the low-resistance section is formed in at least one side surface adjacent to the both end surfaces of the ceramic electronic component in such a manner that the low-resistance section is formed in each of portions of the side surface that adjoin the respective end surfaces; and
the electrode made of a plating metal is continuously formed on each end surface and each low-resistance section of the ceramic electronic component.