Semiconductor device having via sidewall adhesion with encapsulant
Embodiments include forming a die, the die including a pad and a passivation layer over the pad. A via is formed to the pad through the passivation layer. A solder cap is formed on the via, where a first material of the solder cap flows to the sidewall of the via. In some embodiments, the via is encapsulated in a first encapsulant, where the first encapsulant is a polymer or molding compound selected to have a low co-efficient of thermal expansion and/or low curing temperature. In some embodiments, the first material of the solder cap is removed from the sidewall of the via by an etching process and the via is encapsulated in a first encapsulant.
1. A method, comprising:
forming a die, the die comprising a pad and a passivation layer over the pad;
forming a first opening through the passivation layer;
depositing a resist layer over the die;
patterning the resist layer to form a second opening aligned to the first opening;
forming a via in the second opening, the via having a first co-efficient of thermal expansion (CTE);
forming a solder cap on the via, wherein a first material of the solder cap flows to a sidewall of the via;
etching the solder cap to remove the first material from an upper surface of the via, and encapsulating the via in a first encapsulant, wherein the first encapsulant has a second CTE and a curing temperature, wherein a ratio of the second CTE and first CTE is less than 2.5:1 or the first curing temperature is less than 250° C.
2. The method of claim 1 , further comprising:
prior to encapsulating the via, singulating the die from a wafer.
3. The method of claim 1 , further comprising:
after encapsulating the via, singulating the die from a wafer.
4. The method of claim 1 , wherein etching the solder cap removes the first material from the sidewall of the via.
5. The method of claim 1 , further comprising:
testing the die by probing the solder cap.
6. The method of claim 1 , wherein forming the via comprises plating a conductive material, and wherein forming the solder cap comprises plating the first material over the conductive material.
7. The method of claim 1 , further comprising:
attaching the die to a carrier; and
laterally encapsulating the die by a second encapsulant, where a material of the second encapsulant is different than a material of the first encapsulant.
8. A method, comprising:
disposing a metal pillar over and coupled to a contact pad of a die, the metal pillar comprising a first material;
forming a solder cap over the metal pillar, the solder cap comprising a second material;
etching the solder cap, wherein the etching uses an etchant having selectivity between second material and the first material;
attaching the die to a carrier; and
encapsulating the metal pillar with a first encapsulant after etching the solder cap.
9. The method of claim 8 , further comprising:
testing the die by probing the solder cap.
10. The method of claim 8 , wherein the etching is a wet etch process.
11. The method of claim 8 , wherein the etching is a plasma etch process.
12. The method of claim 8 , wherein the first encapsulant is a polymer or molding compound, the first encapsulant having a first co-efficient of thermal expansion (CTE) between 8 ppm/° C. and 40 ppm/° C.
13. The method of claim 8 , further comprising:
curing the first encapsulant at a temperature of 250° C. or less.
14. The method of claim 8 , further comprising:
prior to encapsulating the metal pillar, singulating the die from a wafer; and
attaching the die to a carrier.
15. The method of claim 8 , further comprising:
after encapsulating the metal pillar, singulating the die from a wafer;
attaching the die to a carrier; and
encapsulating the die with a second encapsulant.
16. A method comprising:
etching a solder cap to remove a first portion of the solder cap from an upper surface of a metal pillar, the metal pillar electrically coupled to a contact pad of a die, wherein following etching the solder cap, a second portion of the solder cap remains on a sidewall of the metal pillar, and wherein the sidewall of the metal pillar between the upper surface of the metal pillar and the second portion of the solder cap is free from solder;
attaching the die to a carrier; and
encapsulating the metal pillar with a first encapsulant, wherein the second portion of the solder cap contacts the first encapsulant.
17. The method of claim 16 , wherein encapsulating the metal pillar with the first encapsulant is preformed before attaching the die to the carrier, further comprising:
encapsulating the first encapsulant with a second encapsulant; and
planarizing the second encapsulant to level an upper surface of the first encapsulant with an upper surface of the second encapsulant.
18. The method of claim 17 , wherein the first encapsulant is a modified polymer, wherein after encapsulating the metal pillar, the first encapsulant reaches 80% cyclization at a cure temperature between 100° C. and 250° C.
19. The method of claim 17 , wherein the first encapsulant comprises a first polymer and a first nanofiller additive, wherein the first encapsulant has a first coefficient of thermal expansion which is less than a second coefficient of thermal expansion of the first polymer alone.
20. The method of claim 16 , wherein following encapsulating the metal pillar with the first encapsulant, an interface between the second portion of the solder cap and the first encapsulant is free from voids.