Semiconductor structure and manufacturing method thereof

1. A semiconductor package, comprising:

an interconnect layer comprising:

first conductive vias and second conductive vias, the first and second conductive vias comprising copper;

first conductive pads comprising tungsten and disposed on the respective first conductive vias, the first conductive pads configured as bond pads;

second conductive pads comprising tungsten and disposed on the respective second conductive vias, the second conductive pads configured as test pads;

a dielectric material laterally surrounding the first and second conductive vias; and

a seed layer comprising titanium and disposed between the dielectric material and each of the first and second conductive vias;

a plurality of conductive pillars over the interconnect layer;

a first semiconductor die bonded to the interconnect layer through the first conductive pads, wherein a first side of the first semiconductor die faces the interconnect layer;

an integrated passive device bonded to the interconnect layer through the first conductive pads, the integrated passive device and the first semiconductor die being disposed on a same side of the interconnect layer;

a second semiconductor die electrically coupled to the conductive pillars; and

an encapsulating material surrounding the first semiconductor die, the integrated passive device and the conductive pillars,

wherein each of the conductive pillars extends though the encapsulating material and comprises an upper surface level with a second side of the first semiconductor die opposite to the first side of the first semiconductor die.

2. The semiconductor package of claim 1 , wherein the encapsulating material further laterally surrounds the second semiconductor die.

3. The semiconductor package of claim 1 , further comprising a first connector bonded to the interconnect layer on a side opposite to the first semiconductor die.

4. The semiconductor package of claim 3 , further comprising a second integrated passive device bonded to the interconnect layer on a same side of the first connector.

5. The semiconductor package of claim 1 , wherein the second semiconductor die is electrically coupled to the conductive pillars through second connectors.

6. The semiconductor package of claim 5 , wherein the encapsulating material surrounds the second connectors.

7. The semiconductor package of claim 5 , wherein the encapsulating material fills a space between the first semiconductor die, the second semiconductor die and the second connectors.

8. The semiconductor package of claim 1 , wherein the interconnect layer further comprises third conductive pads electrically connected to form a mesh across an upper surface of the interconnect layer facing the first semiconductor die.

9. The semiconductor package of claim 8 , wherein the third conductive pads comprise power terminals and ground terminals.

10. The semiconductor package of claim 1 , wherein the encapsulating material covers an upper surface of the integrated passive device while exposing an upper surface of the first semiconductor die.

11. The semiconductor package of claim 1 , wherein the encapsulating material covers the second conductive pads of the interconnect layer.

12. The semiconductor package of claim 1 , wherein the second conductive pads are spaced apart from the conductive pillars.

13. A semiconductor package, comprising:

an interconnect layer, comprising:

a dielectric layer having an upper surface;

a conductive via laterally surrounded by the dielectric layer and protruding from the upper surface;

a first conductive pad covering a top surface of the conductive via; and

a first seed layer comprising titanium and disposed between the dielectric layer and sidewalls and a bottom surface of the conductive via, the first seed layer having a top surface level with the upper surface of the dielectric layer;

a plurality of conductive pillars comprising copper over the interconnect layer;

a second seed layer comprising titanium and disposed between the interconnect layer and each of the conductive pillars, the second seed layer contacting the upper surface of the dielectric layer;

a first semiconductor die spaced apart from the conductive pillars and bonded to the interconnect layer, wherein a first side of the first semiconductor die faces the interconnect layer;

a second semiconductor die spaced apart from the first semiconductor die and the conductive pillars and bonded to the interconnect layer;

a third semiconductor die electrically coupled to the conductive pillars; and

a first dielectric material encapsulating the first semiconductor die and the second semiconductor die, the first dielectric material covering an upper surface of the second semiconductor die and exposing an upper surface of the first semiconductor die,

wherein each of the conductive pillars extends though the first dielectric material and comprises an upper surface level with a second side of the first semiconductor die opposite to the first side of the first semiconductor die.

14. The semiconductor package of claim 13 , wherein the second semiconductor die comprises an integrated passive device.

15. The semiconductor package of claim 13 , wherein the interconnect layer further comprises a second conductive pad spaced apart from the first conductive pad and configured as a test pad.

16. The semiconductor package of claim 13 , further comprising a connector and an integrated passive device, both being bonded to a surface of the interconnect layer opposite to the first semiconductor die.

17. The semiconductor package of claim 13 , wherein one of the conductive pillars extends through a height of the first dielectric material.

18. The semiconductor package of claim 13 , further comprising a second dielectric material encapsulating the third semiconductor die.

19. The semiconductor package of claim 18 , wherein the second dielectric material fills a space between the first dielectric material and the third semiconductor die.

20. A semiconductor package, comprising:

an interconnect layer, comprising:

a first dielectric material having an upper surface;

a conductive via laterally surrounded by the first dielectric material and protruding from the upper surface;

a conductive pad covering a top surface of the conductive via; and

a first seed layer comprising titanium and disposed between the first dielectric material and sidewalls and a bottom surface of the conductive via, the first seed layer having a top surface level with the upper surface of the first dielectric material;

a plurality of conductive pillars comprising copper over the interconnect layer;

a second seed layer comprising titanium and disposed between the interconnect layer and each of the conductive pillars, the second seed layer contacting the upper surface of the first dielectric material;

a first semiconductor die spaced apart from the conductive pillars and bonded to the interconnect layer;

a second semiconductor die spaced apart from the first semiconductor die and the conductive pillars and bonded to the interconnect layer;

a connector over the conductive pillars;

a third semiconductor die over the connector and electrically coupled to the conductive pillars through the connector;

a second dielectric material encapsulating the first semiconductor die and the second semiconductor die, the second dielectric material covering an upper surface of the second semiconductor die and comprising a top surface level with an upper surface of the first semiconductor die; and

an integrated passive device bonded to the interconnect layer on a side opposite to the first semiconductor die, the integrated passive device overlapping the first semiconductor die.