Device and method for analysing a defect of a photolithographic mask or of a wafer
The present application relates to a scanning probe microscope comprising a probe arrangement for analyzing at least one defect of a photolithographic mask or of a wafer, wherein the scanning probe microscope comprises: (a) at least one first probe embodied to analyze the at least one defect; (b) means for producing at least one mark, by use of which the position of the at least one defect is indicated on the mask or on the wafer; and (c) wherein the mark is embodied in such a way that it may be detected by a scanning particle beam microscope.
1. A scanning probe microscope comprising a probe arrangement for analyzing at least one defect of a photolithographic mask or of a wafer, said scanning probe microscope comprising:
a. at least one first probe of the probe arrangement of the scanning probe microscope to be scanned across the at least one defect of the photolithographic mask or of the wafer in order to analyze the at least one defect, in which the at least one defect cannot be detected, or cannot be detected reliably, by a scanning particle beam microscope;
b. means of said scanning probe microscope for producing at least one mark, by means of which the position of the at least one defect on the mask or on the wafer is indicated, in which the at least one defect cannot be detected, or cannot be detected reliably, by the scanning particle beam microscope; and
c. wherein the mark is embodied in a way that it may be detected by the scanning particle beam microscope.
2. The scanning probe microscope according to claim 1 , wherein the means of said scanning probe microscope for producing the at least one mark comprises at least one second probe embodied to produce at least one depression in the photolithographic mask or in the wafer.
3. The scanning probe microscope according to claim 1 , wherein the means of said scanning probe microscope for producing the at least one mark comprises at least one second probe embodied to deposit material as at least one mark on the photolithographic mask or on the wafer by applying a voltage to a measuring tip of the at least one second probe.
4. The scanning probe microscope according to claim 1 , wherein the means of said scanning probe microscope for producing at least one mark comprises at least one second probe embodied to produce the at least one mark by direct writing in a dip pen nanolithography process.
5. The scanning probe microscope according to claim 1 , further comprising a control unit embodied to apply the at least one mark to the photolithographic mask or to the wafer in a way that both the at least one mark and at least part of the at least one defect are arranged in a single scanning region of the scanning probe microscope.
6. The scanning probe microscope according to claim 5 , wherein analyzing the at least one defect comprises: determining topography data of the at least one defect and position data of the at least one mark by use of the control unit.
7. The scanning probe microscope according to claim 5 , wherein the control unit is further embodied to determine a repair template for correcting the at least one defect from the topography data of the at least one defect.
8. The scanning probe microscope according to claim 5 , wherein the control unit is embodied to use design data of the photolithographic mask for determining a position for applying the at least one mark.
9. The scanning probe microscope according to claim 5 , further comprising: an interface for transferring the position data of the at least one mark and/or the topography data of the at least one defect and/or the repair template of the at least one defect to the scanning particle beam microscope.
10. A scanning probe microscope comprising a probe arrangement for analyzing at least one defect of a photolithographic mask or of a wafer, said scanning probe microscope comprising:
at least one first probe of the probe arrangement of the scanning probe microscope to be scanned across the at least one defect of the photolithographic mask or of the wafer in order to analyze the at least one defect;
means of said scanning probe microscope for producing at least one mark, by means of which the position of the at least one defect on the mask or on the wafer is indicated; and
a control unit embodied to apply the at least one mark to the photolithographic mask or to the wafer in a way that both the at least one mark and at least part of the at least one defect are arranged in a single scanning region of the scanning probe microscope;
wherein the mark is embodied in a way that it may be detected by a scanning particle beam microscope.
11. A scanning probe microscope comprising a probe arrangement for analyzing at least one defect of a photolithographic mask or of a wafer, said scanning probe microscope comprising:
at least one first probe of the probe arrangement of the scanning probe microscope to be scanned across the at least one defect of the photolithographic mask or of the wafer in order to analyze the at least one defect;
means of said scanning probe microscope for producing at least one mark, by means of which the position of the at least one defect on the mask or on the wafer is indicated;
wherein the mark is embodied in a way that it may be detected by a scanning particle beam microscope; and
wherein the means of said scanning probe microscope for producing the at least one mark comprises at least one second probe embodied to deposit material as at least one mark on the photolithographic mask or on the wafer by applying a voltage to a measuring tip of the at least one second probe.