High electron mobility transistor with improved barrier layer
A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer; forming a patterned mask on the first barrier layer; forming a second barrier layer adjacent to two sides of the patterned mask; removing the patterned mask to form a recess; forming a gate electrode in the recess; and forming a source electrode and a drain electrode adjacent to two sides of the gate electrode.
1. A high electron mobility transistor (HEMT), comprising:
a buffer layer on a substrate;
a first barrier layer on the buffer layer;
a gate electrode on the first barrier layer;
a second barrier layer adjacent to two sides of the gate electrode and on the first barrier layer, wherein the gate electrode directly contacts a top surface of the first barrier layer and sidewalls of the second barrier layer and the first barrier layer and the second barrier comprise different concentrations; and
a source electrode and a drain electrode adjacent to two sides of the gate electrode on the second barrier layer.
2. The HEMT of claim 1 , wherein the first barrier layer and the second barrier layer comprise Al x Ga 1-x N.
3. The HEMT of claim 2 , wherein a concentration of Al of the first barrier layer is less than a concentration of Al of the second barrier layer.
4. The HEMT of claim 1 , wherein a thickness of the first barrier layer is less than a thickness of the second barrier layer.
5. The HEMT of claim 1 , further comprising a gate dielectric layer between the gate electrode and the first barrier layer.
6. The HEMT of claim 5 , wherein the gate dielectric layer comprises a U-shape.
7. A high electron mobility transistor (HEMT), comprising:
a buffer layer on a substrate;
a barrier layer on the buffer layer;
a gate dielectric layer on the barrier layer;
a work function metal layer on gate dielectric layer, wherein the work function metal layer comprises a p-type metal oxide layer;
a gate electrode on the work function metal layer; and
a source electrode and a drain electrode adjacent to two sides of the gate electrode, wherein the source electrode contacts sidewalls of the gate dielectric layer and the work function metal layer directly.
8. The HEMT of claim 7 , wherein the buffer layer comprises a group III-V semiconductor.
9. The HEMT of claim 7 , wherein the buffer layer comprises gallium nitride (GaN).
10. The HEMT of claim 7 , wherein the barrier layer comprises Al x Ga 1-x N.
11. The HEMT of claim 7 , wherein a width of the gate electrode is less than a width of the work function metal layer.