Pellicle film, pellicle frame, pellicle, method for producing same, original plate for light exposure, light exposure apparatus and method for manufacturing semiconductor device
Provided are a pellicle film, a pellicle frame and a pellicle having a higher EUV transmittance. An exposure pattern plate capable of performing EUV lithography with the pellicle film, the pellicle frame or the pellicle, and a method for producing a semiconductor device, are provided. A pellicle film for exposure extendable over an opening of a support frame and having a thickness of 200 nm or less is provided. The film includes a carbon nanotube sheet. The carbon nanotube sheet includes bundles each including a plurality of carbon nanotubes, the bundles each have a diameter of 100 nm or shorter, and the bundles are aligned in a planar direction in the carbon nanotube sheet.
1. A pellicle film for exposure, the pellicle film being extendable over an opening of a support frame comprising:
a thickness of 40 nm or less of the pellicle film,
wherein
the pellicle film includes a carbon nanotube sheet,
the carbon nanotube sheet includes bundles each including a plurality of carbon nanotubes,
the bundles each have a diameter of 100 nm or shorter,
the bundles are aligned in a planar direction in the carbon nanotube sheet, and
the carbon nanotube sheet has a mesh structure of the bundles in the planar direction.
2. The pellicle film for exposure according to claim 1 , wherein the carbon nanotubes each have a diameter of 0.8 nm or longer and 6 nm or shorter.
3. The pellicle film for exposure according to claim 1 , further comprising a protective layer in contact with the carbon nanotube sheet.
4. The pellicle film for exposure according to claim 3 , wherein the protective layer contains at least one selected from the group consisting of SiO x (x≤2), Si a N b (a/b is 0.7 to 1.5), SiON, Y 2 O 3 , YN, Mo, Ru, Rb, Sr, Y, Zr, Nb, B 4 C, SiC and Rh.
5. A pellicle, comprising:
the pellicle film for exposure according to any one of claim 1 ; and
a support frame supporting the pellicle film.
6. The pellicle film for exposure according to claim 1 , wherein the bundles each have a diameter of 20 nm or shorter.
7. A pellicle film, comprising:
a carbon nanotube sheet including:
carbon nanotubes each having a diameter of 0.8 nm or longer and 6 nm or shorter,
a length of 10 μm or longer and 10 cm or shorter, and
a carbon content of 98% by mass or higher,
wherein a thickness of the pellicle film is 40 nm or less,
the carbon nanotube sheet includes bundles each including the carbon nanotubes, and
the carbon nanotube sheet has a mesh structure of the bundles in the planar direction.
8. The pellicle film according to claim 7 , wherein the ratio of the length with respect to the diameter of each of the carbon nanotubes (length/diameter) is 1×10 4 or higher and 1×10 8 or lower.
9. The pellicle film according to claim 7 , further comprising a protective layer in contact with the carbon nanotube sheet.
10. The pellicle film according to claim 9 , wherein the protective layer contains at least one selected from the group consisting of SiO x (x≤2), Si a N b (a/b is 0.7 to 1.5), SiON, Y 2 O 3 , YN, Mo, Ru, Rb, Sr, Y, Zr, Nb, B 4 C, SiC and Rh.
11. A pellicle, comprising:
the pellicle film according to claim 7 ; and
a support frame supporting the pellicle film.
12. An exposure pattern plate, comprising:
a pattern plate; and
the pellicle according to claim 11 , the pellicle being attached to a surface of the pattern plate, the surface having a pattern.
13. An exposure device, comprising:
the exposure pattern plate according to claim 12 .
14. An exposure device, comprising:
a light source releasing exposure light;
the exposure pattern plate according to claim 12 ; and
an optical system guiding the exposure light released from the light source to the exposure pattern plate,
wherein the exposure pattern plate is located such that the exposure light released from the light source is transmitted through the pellicle film to irradiate the pattern plate.
15. The exposure device according to claim 14 , wherein the exposure light is EUV light.
16. A method for producing a semiconductor device, the method comprising the steps of:
causing exposure light, released from a light source, to be transmitted through the pellicle film of the exposure pattern plate according to claim 12 and to irradiate, and to be reflected by, the pattern plate; and
causing the exposure light, reflected by the pattern plate, to be transmitted through the pellicle film and to irradiate a sensitive substrate, so that the exposure light exposes the sensitive substrate while having a shape of a pattern.
17. The method for producing a semiconductor device according to claim 16 , wherein the exposure light is EUV light.
18. A pellicle frame, comprising:
the pellicle film according to claim 7 ; and
a first frame supporting the pellicle film.
19. A pellicle, comprising:
the pellicle frame according to claim 18 ; and
a second frame connected with the pellicle frame.
20. A method for producing a pellicle, comprising:
incorporating water vapor of 10 ppm or higher and 10000 ppm or lower at a temperature of 600° C. or higher and 1000° C. or lower in the presence of a metal catalyst to form a carbon nanotube by chemical vapor deposition;
dispersing the resultant carbon nanotubes in a solvent including a dispersant by stirring with a magnetic stirrer and further subjecting to ultrasonic dispersion by use of a probe-type homogenizer,
putting the dispersed carbon nanotubes into a sheet to form a carbon nanotube sheet; and
connecting the resultant carbon nanotube sheet to a support frame including an opening such that the resultant carbon nanotube sheet covers the opening.
21. The method for producing a pellicle according to claim 20 , wherein the metal catalyst is located on a substrate.
22. The method for producing a pellicle according to claim 20 , wherein the dispersant is an organic side-chain flavin.
23. A method for producing a pellicle, comprising:
patterning a metal catalyst on a substrate, and incorporating water vapor of 10 ppm or higher and 10000 ppm or lower at a temperature of 600° C. or higher and 1000° C. or lower in the presence of the metal catalyst to form a plurality of single-wall carbon nanotubes by chemical vapor deposition and thus to form a carbon nanotube bulk structure;
dispersing the resultant carbon nanotube bulk structure consisting of a plurality of carbon nanotubes in a solvent including a dispersant by stirring with a magnetic stirrer and further subjecting to ultrasonic dispersion by use of a probe-type homogenizer,
putting the dispersed carbon nanotubes into a sheet to form a carbon nanotube sheet; and
connecting the resultant carbon nanotube sheet to a support frame including an opening such that the resultant carbon nanotube sheet covers the opening.
24. The method for producing a pellicle according to claim 23 , wherein the dispersant is an organic side-chain flavin.