Performance improvement of EUV photoresist by ion implantation
A method of patterning a substrate may include providing a blanket photoresist layer on the substrate; performing an ion implantation procedure of an implant species into the blanket photoresist layer, the implant species comprising an enhanced absorption efficiency at a wavelength in the extreme ultraviolet (EUV) range; and subsequent to the performing the ion implantation procedure, performing a patterned exposure to expose the blanket photoresist layer to EUV radiation.
1. A method of improved patterning of a photoresist layer, comprising:
providing an underlayer on a substrate;
performing an ion implantation procedure of an implant species into the underlayer, the implant species comprising an enhanced absorption efficiency at a wavelength in an extreme ultraviolet (EUV) range, the enhanced absorption efficiency being greater than 2×106 cm2/mol, wherein the implant species is implanted into a top region near a top surface of the underlayer;
applying the photoresist layer as a blanket photoresist layer on the underlayer; and
patterning the blanket photoresist layer by exposure to EUV radiation.
2. The method of claim 1 , wherein the implant species is Xe.
3. The method of claim 1 , wherein the implant species is Sn.
4. The method of claim 1 , wherein performing the ion implantation procedure comprises generating a peak in a concentration of the implant species as a function of depth below an outer surface of the underlayer.
5. The method of claim 1 , wherein the implant species comprises a gaseous species at room temperature.
6. The method of claim 1 , wherein a concentration of the implant species as a function of depth below an outer surface of the underlayer increases to a depth of at least 5 nm.
7. The method of claim 1 , wherein the ion implantation procedure comprises a plurality of ion implantation procedures, wherein an implant depth varies between the plurality of implant procedures.
8. The method of claim 7 , wherein the plurality of implantation procedures generates a non-uniform depth profile of the implant species as a function of depth in the underlayer, wherein a concentration of the implant species increases as a function of depth within the underlayer.
9. The method of claim 1 , wherein an ion energy of the implant species is in a range of 300 hundred eV to 2000 eV.
10. The method of claim 1 , wherein the wavelength in the EUV range is 13.5 nm.
11. The method of claim 1 , wherein a thickness of the blanket photoresist layer is between 15 nm and 100 nm.