Semiconductor device package
A semiconductor device package includes a first substrate, a second substrate disposed over the first substrate, and a surface mount device (SMD) component disposed between the first substrate and the second substrate. The SMD component includes a plurality of connection electrodes electrically connecting the first substrate to the second substrate, and the plurality of connection electrodes are electrically disconnected from each other.
1. A semiconductor device package, comprising:
a first substrate;
a second substrate disposed over the first substrate; and
a surface mount device (SMD) component disposed between the first substrate and the second substrate, wherein the SMD component comprises a plurality of connection electrodes electrically connecting the first substrate to the second substrate, and the plurality of connection electrodes are electrically disconnected from each other, and wherein the connection electrodes are spaced apart from the first substrate.
2. The semiconductor device package of claim 1 , wherein the SMD component further comprises an insulating base including an outer surface covered by the plurality of connection electrodes.
3. The semiconductor device package of claim 2 , wherein the outer surface of the insulating base defines an interior volume, and the plurality of connection electrodes are electrically uncoupled from each other inside the interior volume when an alternating current voltage is applied across the connection electrodes.
4. The semiconductor device package of claim 1 , further comprising a plurality of first solder materials disposed on the first substrate and partially covering the plurality of connection electrodes respectively, and a plurality of second solder materials disposed on the second substrate and partially covering the plurality of connection electrodes respectively.
5. The semiconductor device package of claim 4 , wherein the first solder materials and the second solder materials are apart from each other.
6. The semiconductor device package of claim 1 , further comprising a plurality of first conductive pads disposed between the first substrate and the plurality of connection electrodes respectively, and a plurality of second conductive pads disposed between the second substrate and the plurality of connection electrodes respectively.
7. The semiconductor device package of claim 6 , wherein outer edges of the first conductive pads protrude out respective outer edges of the connection electrodes.
8. The semiconductor device package of claim 7 , wherein outer edges of the second conductive pads protrude out the respective outer edges of the connection electrodes.
9. The semiconductor device package of claim 7 , wherein outer edges of the second conductive pads are substantially aligned with or recessed from the respective outer edges of the connection electrodes.
10. The semiconductor device package of claim 1 , wherein the SMD component comprises a dummy passive component.
11. The semiconductor device package of claim 10 , wherein the dummy passive component is a passive component with disabled passive component function.
12. The semiconductor device package of claim 1 , further comprising:
an encapsulation layer disposed between the first substrate and the second substrate, and encapsulating the SMD component;
at least one first electronic component disposed on the first substrate; and
at least one second electronic component disposed on the second substrate, wherein the at least one first electronic component and the at least one second electronic component are electrically connected through the connection electrodes of the SMD component.
13. A semiconductor device package, comprising:
a first substrate;
a second substrate disposed over the first substrate;
a first conductive pad disposed on the first substrate;
a second conductive pad disposed on the second substrate; and
a surface mount device (SMD) component disposed between the first substrate and the second substrate, wherein the SMD component comprises at least one connection electrode electrically connecting the first conductive pad to the second conductive pad, an outer edge of the first conductive pad protrudes out a respective outer edge of the connection electrode, and an outer edge of the second conductive pad is substantially aligned with or recessed from the respective outer edge of the connection electrode.
14. The semiconductor device package of claim 13 , wherein the SMD component further comprises an insulating base including a first outer surface facing the first substrate, a second outer surface facing the second substrate, and an outer edge connected to the first outer surface and the second outer surface, and the connection electrode includes a main portion disposed on the outer edge of the insulating base, a first extension portion extending to the first outer surface of the insulating base, and a second extension portion extending to the second outer surface of the insulating base.
15. The semiconductor device package of claim 14 , wherein a length of the first extension portion is different from a length of the second extension portion.
16. The semiconductor device package of claim 14 , further comprising a first solder material disposed between the first conductive pad and the connection electrode, and a second solder material disposed between the second conductive pad and the connection electrode.
17. The semiconductor device package of claim 16 , wherein the main portion of the connection electrode is partially covered by the first solder material, and the main portion of the connection electrode is exposed from the second solder material.
18. A semiconductor device package, comprising:
a first substrate;
a second substrate disposed over the first substrate;
a first conductive pad disposed on the first substrate;
a second conductive pad disposed on the second substrate; and
a surface mount device (SMD) component disposed between the first substrate and the second substrate and electrically connecting the first conductive pad to the second conductive pad, wherein the SMD component comprises:
an insulating base including a first outer surface facing the first substrate, a second outer surface facing the second substrate, and an outer edge connected to the first outer surface and the second outer surface; and
at least one connection electrode disposed on the insulating base, the connection electrode including a main portion disposed on the outer edge of the insulating base, a first extension portion extending to the first outer surface of the insulating base, and a second extension portion extending to the second outer surface of the insulating base, wherein a length of the first extension portion of the connection electrode is different from a length of the second extension portion of the connection electrode.
19. The semiconductor device package of claim 18 , further comprising a first solder material disposed between the first conductive pad and the first extension portion, and a second solder material disposed between the second conductive pad and the second extension portion, wherein the first solder material is apart from the second solder material.
20. The semiconductor device package of claim 19 , wherein the main portion of the connection electrode is partially covered by the first solder material, and the main portion of the connection electrode is exposed from the second solder material.
21. The semiconductor device package of claim 2 , wherein the outer surface of the insulating base faces the first substrate, the insulating base further includes an outer edge connected to the outer surface, and wherein the connection electrode includes a main portion disposed on the outer edge of the insulating base, and a first extension portion extending to the outer surface of the insulating base.
22. The semiconductor device package of claim 4 , wherein the SMD component further comprises an insulating base including an outer edge; and the first solder materials cover the outer edge of the insulating base.
23. The semiconductor device package of claim 1 , further comprising an encapsulation layer in contact with the first substrate, the second substrate and the SMD component.
24. The semiconductor device package of claim 23 , wherein the encapsulation layer is further disposed in a gap between the first substrate and the SMD component, and in another gap between the second substrate and the SMD component.
25. The semiconductor device package of claim 23 , further comprising:
a first electronic component disposed on the first substrate; and
a second electronic component disposed on the second substrate, wherein the first electronic component and the second electronic component are located between the first substrate and the second substrate, and encapsulated by the encapsulation layer.