Flip-chip light emitting diode, manufacturing method of flip-chip light emitting diode and display device including flip-chip light emitting diode

1. A flip-chip light emitting diode (LED) comprising:

a light-emitting layer;

an n-type semiconductor layer and a p-type semiconductor layer that are on a respective one from among an upper part and a lower part of the light-emitting layer;

a first electrode that is electrically connected to the n-type semiconductor layer via a first contact hole formed in the LED;

a second electrode that is electrically connected to the p-type semiconductor layer, and is electrically insulated from the first electrode;

a metal layer provided in a first area surrounding an outer contour surface of the LED, a second area where the first contact hole is formed, and a third area separate from areas where the first electrode and the second electrode are formed;

a third electrode that is formed on the metal layer in the third area, is electrically connected to the metal layer, and is electrically insulated from the first electrode and the second electrode; and

a plurality of insulating layers that are provided on upper and lower parts of the metal layer such that the metal layer is electrically insulated from the first electrode and the second electrode.

2. The LED of claim 1 , further comprising:

a reflective layer provided on the p-type semiconductor layer,

wherein a second contact hole is formed through one of the plurality insulating layers, and

the second electrode is electrically connected to the p-type semiconductor layer through the second contact hole and the reflective layer.

3. The LED of claim 1 , further comprising:

a fourth electrode,

wherein the metal layer is further provided in a fourth area that is separate from areas where the first electrode, the second electrode, and the third electrode are formed, and

the fourth electrode is formed on the metal layer in the fourth area, is electrically connected to the metal layer, and is electrically insulated from the first electrode and the second electrode.

4. The LED of claim 3 , wherein

the third area, in which the third electrode is formed, is located on one side of the LED, and

the fourth area, in which the fourth electrode is formed, is located on a side of the LED that is opposite to the side in which the third area is located.

5. The LED of claim 4 , wherein

the first electrode and the second electrode are located between the third electrode and the fourth electrode.

6. A manufacturing method of a flip-chip light emitting diode (LED) comprising:

depositing a light-emitting layer, a p-type semiconductor layer, and an n-type semiconductor layer on a substrate, the p-type semiconductor layer and the n-type semiconductor layer being on a respective one from among an upper part and a lower part of the light-emitting layer;

forming a plurality of light-emitting cells, each including the light-emitting layer, the n-type semiconductor layer, and the p-type semiconductor layer, by etching the light-emitting layer, the n-type semiconductor layer, and the p-type semiconductor layer;

forming, with respect to each of the plurality of light-emitting cells, a first contact hole in the light emitting cell by etching the light-emitting layer, the n-type semiconductor layer, and the p-type semiconductor layer;

depositing, with respect to each of the plurality of light-emitting cells, a first insulating layer on areas wherein etching was performed in the step of forming the plurality of light-emitting cells and on areas wherein etching was performed in the step of forming the first contact hole;

depositing, with respect to each of the plurality of light-emitting cells, a metal layer on a first area surrounding an outer contour surface of the light-emitting cell, a second area where the first contact hole is formed, and a third area on one side among upper areas of the first insulating layer;

depositing, with respect to each of the plurality of light-emitting cells, a second insulating layer on the second area where the first contact hole is formed;

forming, with respect to each of the plurality of light-emitting cells, a second contact hole in another side surface area separate from areas where the metal layer is deposited among the upper areas of the first insulating layer; and

forming, with respect to each of the plurality of light-emitting cells, a first electrode in the first contact hole, forming a second electrode in the second contact hole, and forming a third electrode in the third area where the metal layer is deposited.

7. The manufacturing method of an LED of claim 6 , further comprising:

depositing a reflective layer on the p-type semiconductor layer that is previously deposited,

wherein the forming the first contact hole comprises forming, with respect to each of the plurality of light-emitting cells, the first contact hole in the light emitting cell by etching the light-emitting layer, the n-type semiconductor layer, the p-type semiconductor layer, and the reflective layer.

8. A display device comprising:

a plurality of light emitting diodes (LEDs);

a plurality of driving electrodes;

a display panel including a driving substrate; and

a processor configured to control the display panel,

wherein at least one LED among the plurality of LEDs is a flip-chip LED comprising:

a light-emitting layer;

an n-type semiconductor layer and a p-type semiconductor layer that are on a respective one from among an upper part and a lower part of the light-emitting layer;

a first electrode that is electrically connected to the n-type semiconductor layer via a first contact hole formed in the LED;

a second electrode that is electrically connected to the p-type semiconductor layer, and is electrically insulated from the first electrode;

a metal layer provided in a first area surrounding an outer contour surface of the flip-chip LED, a second area where the first contact hole is formed, and a third area separate from areas where the first electrode and the second electrode are formed;

a third electrode that is formed on the metal layer in the third area, is electrically connected to the metal layer, and is electrically insulated from the first electrode and the second electrode; and

a plurality of insulating layers that are provided on upper and lower parts of the metal layer such that the metal layer is electrically insulated from the first electrode and the second electrode.

9. The display device of claim 8 , wherein

each of the at least one LED among the plurality of LEDs further comprises a reflective layer provided on the p-type semiconductor layer,

wherein, for each of the at least one LED, the LED includes a second contact hole that is formed through one of the plurality of insulating layers of the LED, and

for each of the at least one LED, the second electrode of the LED is electrically connected to the p-type semiconductor layer of the LED through the second contact hole of the LED and the reflective layer of the LED.

10. The display device of claim 8 , wherein

each of the at least one LED among the plurality of LEDs further comprises a fourth electrode,

wherein, for each of the at least one LED, the metal layer of the LED is further provided in a fourth area of the LED that is separate from areas of the LED where the first electrode, the second electrode, and the third electrode are formed, and

for each of the at least one LED, the fourth electrode of the LED is formed on the metal layer of the LED in the fourth area of the LED, is electrically connected to the metal layer of the LED, and is electrically insulated from the first electrode of the LED and the second electrode of the LED.

11. The display device of claim 10 , further comprising:

a first element including a first LED of the at least one LED; and

a second element, adjacent to the first element, including a second LED of the at least one LED,

wherein the fourth electrode of the first LED and the fourth electrode of the second LED are electrically connected to the driving substrate through a same driving electrode of the plurality of driving electrodes, and

the third electrode of the first LED and the third electrode of the second LED are electrically connected to the driving substrate through respective driving electrodes of the plurality of driving electrodes that are different from each other.

12. The display device of claim 8 , wherein

the driving substrate includes a plurality of switching elements, and

each of the plurality of switching elements is individually connected to each of the first electrode, the second electrode, and the third electrode, of an LED of the at least one LED, through the plurality of driving electrodes, and

the processor independently controls application of voltages to the first electrode, the second electrode, and the third electrode of the LED through the plurality of switching elements.

13. The display device of claim 8 , wherein

the at least one LED is at least two LEDs,

the display device further comprises:

a first element including a first LED from among the at least two LEDs; and

a second element, adjacent to the first element, including a second LED from among the at least two LEDs, and

the third electrode of the first LED and the third electrode of the second LED are electrically connected to the driving substrate through a same driving electrode of the plurality of driving electrodes.

14. The display device of claim 13 , wherein

the at least two LEDs is at least three LEDs, and

the third electrode of a third LED from among the at least three LEDs is electrically connected to the driving substrate through the same driving electrode in which the third electrode of the first LED and the third electrode of the second LED are connected to the driving substrate through.

15. The display device of claim 14 , wherein

the first LED, the second LED, and the third LED, each constitute a different colored sub-pixel.

16. The display device of claim 15 , wherein

the first LED constitutes a red sub-pixel, the second LED constitutes a green sub-pixel, and the third LED constitutes a blue sub-pixel.

17. The display device of claim 8 , wherein

the at least one LED is at least two LEDs,

the display device further comprises:

a first element including a first LED from among the at least two LEDs; and

a second element, adjacent to the first element, including a second LED from among the at least two LEDs, and

the third electrode of the first LED and the third electrode of the second LED are joined with each other in the display panel.

18. The display device of claim 17 , wherein

the at least one electrode includes a third LED and a fourth LED that are adjacent to the first LED and the second LED,

the third electrode of the third LED and the third electrode of the fourth LED are joined with the third electrode of the first LED and the third electrode of the second LED, that are joined, and

the first LED, the second LED, the third LED, and the fourth LED, together, constitute a pixel.

19. The display device of claim 8 , wherein

the display panel further comprises:

a plurality of phosphors provided on upper parts of the plurality of LEDs; and

a plurality of light-leakage blocking films provided among the plurality of phosphors, and

light-emitting areas of each of the plurality of LEDs are separated in parallel through the plurality of light-leakage blocking films.

20. The display device of claim 19 , wherein

the plurality of phosphors comprises quantum dots (QDs).