Method and apparatus for design of a metrology target
A method and apparatus are described for providing an accurate and robust measurement of a lithographic characteristic or metrology parameter. The method includes providing a range or a plurality of values for each of a plurality of metrology parameters of a metrology target, providing a constraint for each of the plurality of metrology parameters, and calculating, by a processor to optimize/modify these parameters within the range of the plurality of values, resulting in a plurality of metrology target designs having metrology parameters meeting the constraints.
1. A metrology target, comprising:
a plurality of metrology targets disposed at different locations on a substrate by a manufacturing process,
wherein each metrology target comprises at least first and second metrology sub-targets that are different in design, and
wherein the first and second metrology sub-targets are designed such that a stack sensitivity of each metrology sub-target reaches a maximum for a selected incident radiation or a selected process stack configuration.
2. The metrology target of claim 1 , wherein the first and second metrology sub-targets are designed for different process stacks.
3. The metrology target of claim 1 , wherein the first and second metrology sub-targets are designed for different illumination parameters.
4. The metrology target of claim 3 , wherein the illumination parameters comprise wavelength values or polarizations of an incident radiation.
5. A method of metrology target design, the method comprising:
providing a plurality of metrology parameters for generating a plurality of metrology target designs corresponding to a plurality of metrology targets, wherein each metrology target is designed to be respectively disposed at a different location on a substrate;
receiving illumination parameters for measuring the plurality of metrology targets;
determining, by a computer apparatus, one or more values of the plurality of metrology parameters for each metrology target using the illumination parameters or process stack information of the substrate, wherein the one or more values of the plurality of metrology parameters are determined such that a maximum stack sensitivity is achieved for measurement using a selected incident radiation or a selected process stack configuration; and
producing the plurality of metrology targets based on the determining of the one or more values of the plurality of metrology parameters for each of the metrology target designs.
6. The method of claim 5 , wherein the illumination parameters comprise wavelength values or polarizations of an incident radiation.
7. The method of claim 5 , wherein at least one metrology target is designed for a different illumination parameter.
8. The method of claim 5 , wherein at least one metrology target is designed for a different process stack.
9. The method of claim 5 , wherein at least one metrology target is designed for different wavelengths or polarizations of an incident radiation.
10. The method of claim 5 , wherein the metrology parameters comprise material choice, critical dimension, sub-segmentation, or sidewall angle.
11. The method of claim 5 , wherein the plurality of metrology targets comprise multi-layer periodic structures.
12. The method of claim 11 , wherein the metrology parameters of the multi-layer periodic structures comprise pitch, duty cycle of lines and spaces, height, or width.
13. A non-transitory computer program product comprising machine-readable instructions which, when run on a suitable processor, cause the processor to perform operations comprising:
providing a plurality of metrology parameters for generating a plurality of metrology target designs corresponding to a plurality of metrology targets, wherein each metrology target is designed to be respectively disposed at a different location on a substrate;
receiving illumination parameters for measuring the plurality of metrology targets;
determining one or more values of the plurality of metrology parameters for each metrology target using the illumination parameters or process stack information of the substrate, wherein the one or more values of the plurality of metrology parameters are determined such that a maximum stack sensitivity is achieved for measurement using a selected incident radiation or a selected process stack configuration; and
producing the plurality of metrology targets based on the determining of the one or more values of the plurality of metrology parameters for each of the metrology target designs.
14. The non-transitory computer program product of claim 13 , wherein the illumination parameters comprise wavelength values or polarizations of an incident radiation.
15. The non-transitory computer program product of claim 13 , wherein at least one metrology target is designed for a different illumination parameter.
16. The non-transitory computer program product of claim 13 , wherein at least one metrology target is designed for a different process stack.
17. The non-transitory computer program product of claim 13 , wherein at least one metrology target is designed for different wavelengths or polarizations of an incident radiation.
18. The non-transitory computer program product of claim 13 , wherein the metrology parameters comprise material choice, critical dimension, sub-segmentation, or sidewall angle.
19. The non-transitory computer program product of claim 13 , wherein the plurality of metrology targets comprise multi-layer periodic structures.
20. The non-transitory computer program product of claim 19 , wherein the metrology parameters of the multi-layer periodic structures comprise pitch, duty cycle of lines and spaces, height, or width.